Jul.-29-'05
Jul.-29-'05
Jul.-29-'05
DATE NAME
DRAWN
CHECKED
APPROVED
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SPECIFICATION
Device Name :
Type Name :
Spec. No. :
Date :
H04-004-05
FMW10N90G
MS5F6287
MS5F6287
1/ 19
Power MOSFET
CHECKED
Jul.-29-2005
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H04-004-03
MS5F6287
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enactment
Revised Records
Date Classification
Index
Content Drawn
Checked Checked Approved
Jul.-29
2005
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1.Scope This specifies Fuji Power MOSFET FMW10N90G
2.Construction N-Channel enhancement mode power MOSFET
3.Applications for Switching
4.Type name and Ordering code
TypeName
5.Outviewand Standard packing Specification
6.Absolute MaximumRatings at Tc=25℃(unless otherwise specified)
Description Symbol Unit Remarks
VDS V
VDSX V VGS=-30V
Continuous Drain Current IDA
Pulsed DrainCurrent IDP ± A
Gate-Source Voltage VGS ± V
IAR A Note *1
EAS mJ Note *2
EAR mJ Note *3
MaximumDrain-Source dV/dt dVDS/dt kV/μs
Peak Diode Recovery dV/dt dV/dt kV/μs Note *4
T
c
=25
℃
Ta=25℃
Operating andStorage Tch ℃
Temperature range Tstg ℃
PDW
Repetitive
MaximumAvalancheEnergy 27
Drain-Source Voltage
Non-Repetitive
MaximumAvalancheEnergy
MaximumPower Dissipation
Repetitive andNon-repetitive
MaximumAvalancheCurrent
Ordering code Country code Packaging
Assembly location
FMW10N90G FMW10N90G SC (Blank) Japan
FMW10N90G SC-K1 K1 'Factory A' at Korea
Ordering code Package
Type
Out view Standard packing
Specification
FMW10N90G SC TO-247 page 8/19 MS5Q0006
FMW10N90G SC-K1 page 9/19 MS5Q0064
Characteristics
900
900
10
40
30
10
826
150
-55 to +150
VDS
900V40
5
270
2.50
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7.Electrical Characteristics at Tc=25
℃
Static Ratings
Description Symbol Conditions min. typ. max. Unit
Drain-Source ID=250μA
Breakdown Voltage BVDSS VGS=0V 900 - - V
Gate Threshold ID=250μA
Voltage VGS(th) VDS=VGS 3.0 - 5.0 V
Zero Gate Voltage VDS=900V
VGS=0V Tch=25℃- - 25
Drain Current IDSS VDS=720V
VGS=0V Tch=125℃- - 250
Gate-Source VGS= ± 30V
Leakage Current IGSS VDS=0V - - 100 nA
Drain-Source ID=5A
On-State Resistance RDS(on) VGS=10V - 1.08 1.40 Ω
Forward ID=5A
Transconductance gfs VDS=25V 6 12 - S
Input Capacitance Ciss VDS=25V - 1250 1900
Output Capacitance Coss VGS=0V - 160 240
Reverse Transfer f=1MHz 12 18 pF
Capacitance Crss -
td(on) Vcc=600V - 26 39
Turn-On Time tr VGS=10V - 23 35
td(off) ID=5A - 60 90 ns
Turn-Off Time tf RG=10Ω- 17 26
Total Gate Charge QGVcc=450V - 34.5 52
Gate-Source Charge QGS ID=10A - 10 15 nC
Gate-Drain Charge QGD VGS=10V - 12 18
Reverse Diode
Description Symbol Conditions min. typ. max. Unit
Diode Forward IF=10A
On-Voltage VSD VGS=0V Tch=25℃- 0.90 1.50 V
Reverse Recovery IF=10A
Time trr VGS=0V - 3.1 - μs
Reverse Recovery
-di/dt=100A/
μ
s
Charge Qrr Tch=25℃- 17.0 - μC
8.Thermal Resistance
Description Symbol min. typ. max. Unit
Channel to Case Rth(ch-c) 0.463 ℃
/W
Channel to Ambient Rth(ch-a) 50 ℃
/W
Note *1 : Tch
150℃, See Fig.1 and Fig.2
Note *2 : Starting Tch=25℃,IAS=4A,L=94.7mH,Vcc=90V,RG=50Ω,See Fig.1 and Fig.2
EAS limited by maximum channel temperature and avalanche current.
See to the 'Avalanche Energy' graph of page 17/18.
Note *
3
:
Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Thermal impedance' graph of page 18/18.
Note *4 : IF-ID,-di/dt=50A/μs,VccBVDSS,Tch150℃
μA
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Fig.1 Test circuit
Fig.2 Operating waveforms
50ΩD.U.T
L
Vcc
-15V
0
BVDSS
IDP
VGS
ID
VDS
+10V
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9.Reliability test items
All guaranteed values areunder the categories of reliabilityper non-assembled(only MOSFETs).
Each categories under the guaranteed reliability conformto EIAJ ED4701/100 method104
standards.
Test items required without fail
Humidification treatment (85±2°C,65±5%RH,168±24hr)
Heat treatment of soldering (Solder Dipping,260±5°C(265°Cmax.),10±1sec,2 times)
Test Test Testing methods and Conditions Reference Sampling Acceptance
No. Items Standard number number
1 Terminal Pull force
Strength TO-220,TO-220F: 10N EIAJ
(Tensile) TO-3P,TO-3PF,TO-247: 25N ED4701/400 15
TO-3PL: 45N method 401
T-Pack,K-Pack : 10N
Forcemaintaining duration :30±5sec
2 Terminal Load force
Strength TO-220,TO-220F: 5N EIAJ
(Bending) TO-3P,TO-3PF,TO-247: 10N ED4701/400 15
TO-3PL: 15N method 401
T-Pack,K-Pack : 5N
Number of times :2times(90deg./time)
3 Mounting Screwing torquevalue: (M3) EIAJ (0:1)
Strength TO-220,TO-220F: 40±10N・cm ED4701/400 15
TO-3P,TO-3PF,TO-247: 50±10N・cm method402
TO-3PL: 70±10N・cm
4 Vibration frequency: 100Hz to 2kHz EIAJ
Acceleration: 200m/s
2
ED4701/400 15
Sweepingtime : 4min. method 403
48min. for eachX,Y&Zdirections.
5 Shock Peak amplitude: 15km/s
2
EIAJ
Durationtime : 0.5ms ED4701/400 15
3times for each X,Y&Zdirections. method 404
6 Solderability Solder temp. : 245±5°C
Immersion time : 5±0.5sec
Eachterminal shall beimmersed in ----- 15
the solder bathwithin 1to 1.5mmfrom
the body.
7 Resistance to Solder temp. : 260±5°C EIAJ
SolderingHeat Immersion time : 10±1sec ED4701/300 15
Number of times : 1times method 302
Mechanical test methodsMechanical test methods
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Test Test Testing methods andConditions Reference Sampling Acceptance
No. Items Standard number number
1 High Temp. Temperature: 150+0/-5°C EIAJ 22
Storage Test duration: 1000hr ED4701/200
method 201
2 LowTemp. Temperature: -55+5/-0°C EIAJ 22
Storage Test duration: 1000hr ED4701/200
method 202
3 Temperature Temperature : 85±2°C EIAJ
Humidity Relative humidity: 85±5% ED4701/100 22
Storage Test duration: 1000hr method 103
4 Temperature Temperature : 85±2°C EIAJ
Humidity Relative humidity: 85±5% ED4701/100 22
BIAS Bias Voltage: VDS(max) * 0.8 method 103
Test duration: 1000hr
5 Unsaturated Temperature: 130±2°C EIAJ (0:1)
Pressurized Relative humidity: 85±5% ED4701/100 22
Vapor Vapor pressure : 230kPa method 103
Test duration: 48hr
6 Temperature High temp.side : 150±5°C/30min. EIAJ
Cycle Low temp.side : -55±5°C/30min. ED4701/100 22
RT: 5°C〜35°C/5min. method105
Number of cycles: 100cycles
7 Thermal Shock Fluid: purewater(running water)
High temp.side : 100+0/-5°C EIAJ 22
Low temp.side : 0+5/-0°C ED4701/300
Duration time: HT 5min,LT 5min method 307
Number of cycles: 100cycles
8 Intermittent ΔTc=90degree EIAJ
Operating
Tch
≦
Tch(max.)
ED4701/100 22
Life Test duration : 3000 cycle method 106
9 HTRB Temperature : Tch=150+0/-5°C EIAJ
(Gate-source) Bias Voltage: +VGS(max) ED4701/100 22 (0:1)
Test duration: 1000hr method 101
10 HTRB Temperature : Tch=150+0/-5°C EIAJ
(Drain-Source) Bias Voltage : VDS(max)*0.8 ED4701/100 22
Test duration: 1000hr method 101
Climatic test methodsEndurance test methods
Failure Criteria Symbols Unit
Lower Limit Upper Limit
Breakdown Voltage BVDSS LSL ----- V
Zero gate Voltage Drain-Source Current IDSS ----- USL A
Gate-Source Leakage Current IGSS ----- USL A
Gate Threshold Voltage VGS(th) LSL USL V
Drain-Source on-state Resistance RDS(on) ----- USL Ω
Forward Transconductance gfs LSL ----- S
Diode forward on-Voltage VSD ----- USL V
Marking
Soldering ----- With eyes or Microscope -----
and other damages
* LSL : Lower Specification Limit * USL : Upper Specification Limit
* Before any of electrical characteristics measure, all testing related to the humidity
have conducted after drying the package surface for more than an hour at 150°C.
Item Failure Criteria
Electrical
Characteristics
Outview
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H04-004-03
MS5F6287
8/ 19
Note : 1.Marking Infomation
Type Name : 10N90G
Lot No. : YMNNN
Y: Year Code
M : Month Code
NNN : Lot SerialNumber
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MS5F6287
9/ 19
Note : 2.Marking Infomation
Type Name : 10N90G
Lot No. : YMNNN
Y: Year Code
M : Month Code
NNN : Lot SerialNumber
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10/ 19
10.Cautions
･AlthoughFujiElectriciscontinuallyimprovingproductqualityandreliability,asmallpercentageof
semiconductor productsmay becomefaulty.WhenusingFujiElectricsemiconductorproductsinyour
equipment,youarerequested totakeadequatesafetymeasurestopreventtheequipmentfromcausing
physical injury,fire,orother problem incaseanyof the productsfail.Itisrecommendedtomake your
designfail-safe,flameretardant, andfreeofmalfunction.
･TheproductsdescribedinthisSpecificationareintendedforuseinthefollowingelectronicand electrical
equipmentwhichhasnormalreliabilityrequirements.
･Computers ･OAequipment ･Communicationsequipment(Terminaldevices)
･Machinetools ･AVequipment ･Measurementequipment
･Personalequipment ･Industrialrobots ･Electricalhomeappliances etc.
･TheproductsdescribedinthisSpecificationarenotdesigned ormanufactured tobeused inequipment or
systemsusedunderlife-threatening situations.Ifyouarecons
ideringusing theseproductsin the equipment
listed below,first checkthesystem constructionandrequiredreliability, and takeadequatesafetymeasures
suchasa backup system toprevent theequipmentfrom malfunctioning.
･Backbonenetworkequipment ･Transportationequipment(automobiles,trains,ships,etc.)
･Traffic-signalcontrolequipment ･Gasalarms,leakagegasautobreakers
･Submarinerepeaterequipment ･Burglar alarms,fire alarms,emergencyequipment
･Medicalequipment ･Nuclearcontrolequipment etc.
･Do notusetheproducts inthis Specificationfor equipment requiringstrictreliability suchas(butnotlimited
to):
･Aerospaceequipment ･Aeronauticalequipment
11.Warnings
･TheMOSFETs shouldbeusedin productswithintheirabsolute maximum rating(voltage,current,
temperature, etc.).
･TheMOSFETsmaybedestroyedifusedbeyondtherating.
･Weonlyguaranteethenon-repetitiveandrepetitiveAvalanchecapabilityandnotfor thecontinuous
Avalanchecapabilitywhichcanbeassumedasabnormalcondition.Please notethedevicemaybe
destructedfrom theAvalancheoverthespecifiedmaximum rating.
･Theequipment containingMOSFETsshouldhaveadequate fusesor circuitbreakers topreventthe
equipmentfrom causingsecondary destruction(ex.fire, explosionetc…).
･UsetheMOSFETswithintheir reliabilityand lifetimeundercertainenvironmentsorconditions.The
MOSFETsmayfailbeforethetargetlifetimeofyour productsifusedundercertainreliabilityconditions.
･Becareful when handlingMOSFETsforESD damage.(Itisanimportantconsideration.)
･ When handling MOSFETs, hold them by the case (package) and don’t touch the leads and terminals.
･Itisrecommended that anyhandlingofMOSFETs isdoneongroundedelectricallyconductivefloorand
tablemats.
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･Before touching a MOSFET terminal, Discharge any static electricity from your bodyand clothes
by grounding out through a high impedance resistor (about 1M)
･When soldering, in order to protect the MOSFETs from static electricity, ground the soldering iron
or soldering bath through a low impedance resistor.
･You must design the MOSFETs to be operated within the specified maximum ratings(voltage,
current, temperature, etc.) to prevent possible failure or destruction of devices.
･Consider the possible temperature rise not only for the channel and case, but also for the outer
leads.
･Do not directly touch the leads or package of the MOSFETs while power is supplied or during
operation in order to avoid electric shock and burns.
･The MOSFETs are made of incombustible material. However, if a MOSFET fails, it may emit
smoke or flame. Also, operating the MOSFETs near any flammable place or material may cause
the MOSFETs to emit smoke or flame in case the MOSFETs become even hotter during
operation. Design the arrangement to prevent the spread of fire.
･The MOSFETs should not used in an environment in the presence of acid, organic matter, or
corrosive gas(hydrogen sulfide, sulfurous acid gasetc.)
･The MOSFETs should not used in an irradiated environment since they are not radiation-proof.
Installation
･Soldering involves temperatures which exceed the device storage temperature rating. To avoid
device damage and to ensure reliability, observe the following guidelines from the quality
assurance standard.
Solder temperature and duration (through-hole package)
Solder temperature Duration
2605C 101 seconds
35010 C 3.50.5 seconds
･The immersion depth of the lead should basically be up tothelead stopper and the distanceshould
be a maximum of 1.5mm from the device.
･When flow-soldering, be careful to avoid immersing the package in the solder bath.
Recommendedsolderingcondition
Methods
Categories Packages Wave
Soldering
(Full dipping)
Wave
Soldering
(Only terminal)
Infrared
Reflow Air
Reflow Soldering
iron
(Re-work)
TO-3PL × ◎ × × ○
TO-3P × ◎ × × ○
TO-247 × ◎ × × ○
TO-3PF × ◎ × × ○
TO-220 × ◎ × × ○
TO-220F × ◎ × × ○
T-Pack(L) × ◎ × × ○
Through-Hole
TO-3PL-7 × ◎ × × ○
◎：Possible ○：Limitedto1time ×：Unable
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H04-004-03
MS5F6287
12/ 19
･Refer to the following torquereference whenmountingthedeviceonaheat sink.Excess torque
applied tothemountingscrew causesdamage tothedevice and weak torquewillincrease the
thermal resistance,bothof whichconditionsmaydestroy thedevice.
Table 1:Recommended tightening torques.
Packagestyle Screw Tightening torques Note
TO-220
TO-220F M3 30 –50Ncm
TO-3P
TO-3PF
TO-247 M3 40 –60Ncm
TO-3PL M3 60–80Ncm
flatness: <=±30m
roughness: <=10m
Plane offthe edges:
C<=1.0mm
･The heat sink should have a flatness within±30μm and roughness within 10μm. Also, keep the tightening
torque withinthelimits ofthis specification.
･Improperhandlingmay causeisolationbreakdownleadingto acriticalaccident.
ex.) Overplane off theedges of screw hole. (Recommendedplaneofftheedgeis C<1.0mm)
･Werecommendtheuse of thermalcompoundtooptimizetheefficiencyofheatradiation. Itis importantto
evenlyapplythecompoundandtoeliminate any airvoids.
Storage
･TheMOSFETsmust bestoredatastandardtemperature of5to 35℃andrelativehumidityof45to 75%.
･Ifthestorage areaisverydry,a humidifiermayberequired.In suchacase,useonly deionizedwater or
boiledwater,sincethe chlorineintapwater maycorrode theleads.
･TheMOSFETsshould notbesubjectedtorapidchanges intemperatureto avoidcondensation onthe
surfaceoftheMOSFETs.Therefore storetheMOSFETsina placewherethetemperatureissteady.
･TheMOSFETsshould notbestoredontopofeachother,sincethismay causeexcessiveexternalforceon
thecase.
･TheMOSFETsshould bestored withtheleadterminalsremainingunprocessed.Rust maycause
presolderedconnectionstofailduringlaterprocessing.
･TheMOSFETsshould bestored inantistatic containers or shippingbags.
12.Appendix
･This products doesnot containPBBs(PolybrominatedBiphenyl)orPBDEs(PolybrominatedDiphenyl
Ether),substances.
･This productsdoes not containClass-IODSand Class-IIODS substances set forceby ‘Clean Air Act of US’
law.
･If youhaveanyquestionsaboutanypart of thisSpecification, pleasecontactFuji
Electricorits salesagentbeforeusingtheproduct.
･NeitherFuji nor its agentsshallbeheldliable for anyinjurycaused by usingthe products
notinaccordancewiththe instructions.
･TheapplicationexamplesdescribedinthisspecificationaremerelytypicalusesofFuji
Electricproducts.
･Thisspecificationdoes not confer anyindustrialpropertyrights orotherrights,nor
constitute alicenseforsuchrights.
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13/ 19
0 5 10 15 20
0
5
10
15
20V 7.0V
10V
8.0V
6.5V
6.0V
ID [A]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80 s pulse test,Tch=25C
VGS=5.5V
0 25 50 75 100 125 150
0
50
100
150
200
250
300
Allowable Power Dissipation
PD=f(Tc)
PD [W]
Tc [C]
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012345678910
0.1
1
10
ID[A]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C
0.1 1 10
1
10
100
gfs [S]
ID [A]
Typical Transconductance
gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C
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-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
RDS(on) []
Tch[C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5A,VGS=10V
0 5 10 15
1.0
1.1
1.2
1.3
1.4
1.5
1.6
7.0V
6.5V
RDS(on) [ ]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80 s pulse test,Tch=25C
10V
20V
8.0V
6.0V
VGS=5.5V
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-50 -25 0 25 50 75 100 125 150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250A
VGS(th) [V]
Tch[C]
0 5 10 15 20 25 30 35 40
0
2
4
6
8
10
12
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=10A,Tch=25C
VGS [V]
720V
450V
Vcc= 180V
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0.00 0.25 0.50 0.75 1.00 1.25 1.50
0.1
1
10
IF [A]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80 s pulse test,Tch=25C
100101102
10-3
10-2
10-1
100
101
C [nF]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
DWG.NO.
This m ater ial and the info rmat ion her ein is t he prope rty of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent , or d isclosed in any way whatso ever for the use of any
thir d party nor used for t he manufacturi ng purposes wit hout
the express written consent of Fuji Electric Co.,Ltd.
H04-004-03
MS5F6287
18/ 19
10-1 100101
100
101
102
103
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=600V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t [ns]
ID [A]
0 25 50 75 100 125 150
0
200
400
600
800
1000
IAS=4A
IAS=10A
IAS=6A
EAS [mJ]
starting Tch [C]
Maximum Avalanche Energy vs. starting Tch
E(AS)=f(starting Tch):Vcc=90V
DWG.NO.
This m ater ial and the info rmat ion her ein is t he prope rty of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent , or d isclosed in any way whatso ever for the use of any
thir d party nor used for t he manufacturi ng purposes wit hout
the express written consent of Fuji Electric Co.,Ltd.
H04-004-03
MS5F6287
19/ 19
10-8 10-7 10-6 10-5 10-4 10-3 10-2
10-2
10-1
100
101
102
Single Pulse
Maximum Avalanche Current Pulsewidth
IAV=f(tAV):starting Tch=25C,Vcc=90V
Avalanche Current IAV [A]
tAV [sec]
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
Maximum Transient Thermal Impedance
Zth(ch-c)=f(t):D=0
Zth(ch-c) [C/W]
t [sec]