VBO 50 IdAVM = 50 A VRRM =800-1800 V Single Phase Rectifier Bridge VRSM VRRM V V 900 1300 1700 1900 800 1200 1600 1800 + Type VBO VBO VBO VBO ~ - ~ ~ 50-08NO7 50-12NO7 50-16NO7 50-18NO7* ~ + - * delivery time on request Symbol Conditions IdAVM TC = 64C, module IFSM TVJ = 45C VR = 0 I2t Maximum Ratings 50 A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 750 820 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 670 740 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2800 2820 A2 s A2 s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 2250 2300 A2s A2 s -40...+150 150 -40...+150 C C C 2500 3000 V~ V~ 15% 15% 15% 15% 260 Nm lb.in. Nm lb.in. g TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL < 1 mA t = 1 min t=1s Md Mounting torque (M5) 5 44 3 26 Terminal connection torque (M5) typ. Symbol Conditions IR VR = VRRM VR = VRRM TVJ = 25C TVJ = TVJM < < 0.3 10.0 mA mA VF IF TVJ = 25C < 1.6 V VT0 rT For power-loss calculations only TVJ = TVJM 0.85 8 V m RthJC per per per per 2.6 0.65 2.84 0.71 K/W K/W K/W K/W * Package with screw terminals * Isolation voltage 3000 V~ * Planar passivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 72873 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") 9 10 M5 ~ Weight Features 10 18 ~ 20 16 2 60 72 26 diode; DC current module diode; DC current module 24 28 RthJK = 150 A 5.3 60 36 Characteristic Values 5.5 Data according to IEC 60747 refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20100706a 1-2 http://store.iiic.cc/ VBO 50 200 [A] IF(OV) -----IFSM 1:TVJ= 150C 2:TVJ= 25C 4 10 2 As IFSM (A) TVJ=45C TVJ=150C 750 1.6 670 150 TVJ=45C 1.4 1.2 10 100 3 TVJ=150C 1 0 V RRM 0.8 50 1/2 VRRM 0.6 IF 2 10 0.4 0 0.5 1 1.5 VF[V] 2 2.5 Fig. 1 Forward current versus voltage drop per diode 100 [W] 1 V RRM 1 10 0 10 1 t[ms] 10 2 10 85 TC 0.6 0.35 = RTHCA [K/W] 2 1 4 t [ms] 70 [A] 100 105 1.35 60 10 DC sin.180 rec.120 re c.60 .30 90 95 0.85 6 Fig. 3 I2dt versus time (1-10ms) per diode or thyristor Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration PSB 55 80 2 3 50 110 115 120 30 2.35 40 DC sin.180 rec.120 rec.60 rec.30 20 PVTOT 0 125 130 135 5.35 140 145 C 150 10 IFAVM 30 10 IdAV 0 [A] 50 100 Tamb 150 [K] Fig. 4 Power dissipation versus direct output current and ambient temperature 0 50 100 150 200 TC(C) Fig.5 Maximum forward current at case temperature 4 K/W Z thJK Z thJC 3 2 1 Z th 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode or thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20100706a 2-2 http://store.iiic.cc/