© 2010 IXYS All rights reserved 1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VBO 50
20100706a
VRSM VRRM Type
VV
900 800 VBO 50-08NO7
1300 1200 VBO 50-12NO7
1700 1600 VBO 50-16NO7
1900 1800 VBO 50-18NO7*
Symbol Conditions Maximum Ratings
IdAVM TC = 64°C, module 50 A
IFSM TVJ = 45°C t = 10 ms (50 Hz), sine 750 A
VR = 0 t = 8.3 ms (60 Hz), sine 820 A
TVJ = TVJM t = 10 ms (50 Hz), sine 670 A
VR = 0 t = 8.3 ms (60 Hz), sine 740 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 2800 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 2820 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 2250 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 2300 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL < 1 mA t = 1 s 3000 V~
MdMounting torque (M5) 5 ±15% Nm
44 ±15% lb.in.
Terminal connection torque (M5) 3 ±15% Nm
26 ±15% lb.in.
Weight typ. 260 g
Features
• Package with screw terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 72873
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power cycling
Symbol Conditions Characteristic Values
IRVR= VRRM TVJ = 25°C < 0.3 mA
VR= VRRM TVJ = TVJM < 10.0 mA
VFIF= 150 A TVJ = 25°C < 1.6 V
VT0 For power-loss calculations only 0.85 V
rTTVJ = TVJM 8mΩ
RthJC per diode; DC current 2.6 K/W
per module 0.65 K/W
RthJK per diode; DC current 2.84 K/W
per module 0.71 K/W
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 refer to a single diode unless otherwise stated.
IdAVM = 50 A
VRRM =800-1800 V
Single Phase
Rectifier Bridge
* delivery time on request
+
–
~
~~
~
+
-
60
36
5.3
~~
9
10
24 20
60
72
16
10
28
26
5.5 2
M5
18
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© 2010 IXYS All rights reserved 2 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VBO 50
20100706a
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per diode
IFSM: Crest value. t: duration
Fig.5 Maximum forward current
at case temperature
Fig. 4 Power dissipation versus direct output current
and ambient temperature
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
0.511.522.5
0
50
100
150
200
V [V]
F
IF
[A] 1:T = 150°
VJ C
2:T = 25°C
VJ
12
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0 10
1 10
2 10
3
t[ms]
I (A)
FSM
TVJ=45°C TVJ=150°C
750 670
I
------
I
FSM
F(OV )
0 V
RRM
1/ 2 V
RR M
1 V
RRM
2 4 6 10
TVJ=45°C
TVJ=150°C
t [ms]
1
10
10
10
2
3
4
As
2
50 100 150 200
0
10
30
50
70 DC
sin.180°
rec.120°
c.60°re
.30°
T (°C)
C
I
dAV
[A]
0.01 0.1 110
1
2
3
4
K/W
Zth
t[s]
ZthJK
ZthJC
3010
0
20
40
60
80
100
85
90
95
100
105
110
115
120
125
130
135
140
145
150
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
5.35
2.35
1.35
0.85
0.6 0.35 = RTHCA [K/W]
IFAVM [A] Tamb [K]
050100150
[W]
PVTOT
PSB 55
Fig. 3
I
2dt versus time (1-10ms)
per diode or thyristor
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