H11D1/H11D2/H11D3 PHOTOTRANSISTOR, 5.3 KV, TRIOS HIGH BVCER VOLTAGE OPTOCOUPLER FEATURES * CTR at IF=10 mA, BVCER=10 V: 20% * Good CTR Linearity with Forward Current * Low CTR Degradation * Very High Collector-Emitter Breakdown Voltage - H11D1/H11D2, BVCER=300 V - H11D3, BVCER=200 V * Isolation Test Voltage: 5300 VACRMS * Low Coupling Capacitance * High Common Mode Transient Immunity * Phototransistor Optocoupler in 6 Pin DIP Package with Base Connection * Field Effect Stable: TRIOS* V * VDE 0884 Available with Option 1 * Underwriters Lab File #E52744 * Applications - Telecommunications - Replace Relays D E DESCRIPTION The H11D1/2/3 are optocouplers with very high BVCER. They are intended for telecommunications applications or any DC application requiring a high blocking voltage. *TRIOS--TRansparent IOn Shield Dimensions in inches (mm) Pin One ID 3 2 1 Anode 1 .248 (6.30) .256 (6.50) 6 Base Cathode 2 4 5 5 Collector NC 3 6 4 Emitter .335 (8.50) .343 (8.70) .300 (7.62) typ. .039 (1.00) Min. .130 (3.30) .150 (3.81) 4 typ. 18 typ. .020 (.051) min. .031 (0.80) .035 (0.90) .018 (0.45) .022 (0.55) .100 (2.54) typ. .010 (.25) .014 (.35) .110 (2.79) .150 (3.81) .300 (7.62) .347 (8.82) Maximum Ratings (TA=25C) Emitter Reverse Voltage ................................................................................... 6 V DC Forward Current ........................................................................60 mA Surge Forward Current (tp 10 s) ................................................. 2.5 A Total Power Dissipation ............................................................... 100 mW Detector Collector-Emitter Voltage H11D1/2 ......................................................................................300 V H11D3 .........................................................................................200 V Collector-Base Voltage H11D1/2 ......................................................................................300 V H11D3 .........................................................................................200 V Emitter-Base Voltage .......................................................................... 7 V Collector Current .......................................................................... 100 mA Total Power Dissipation ............................................................... 300 mW Package Isolation Test Voltage (between emitter and detector refer to climate DIN 40046, part 2, Nov. 74).................... 5300 VACRMS Insulation Thickness between Emitter and Detector .....................0.4 mm Creepage Distance ................................................................................ 7 mm Clearance Distance ................................................................................ 7 mm Comparative Tracking Index (per DIN IEC 112/VDE 0303, part 1) ............................................... 175 Isolation Resistance VIO=500 V, TA=25C .........................................................................1012 VIO=500 V, TA=100C .......................................................................1011 Storage Temperature Range ..........................................-55C to +150C Operating Temperature Range ......................................-55C to +100C Junction Temperature...................................................................... 100C Soldering Temperature (max. 10 sec., dip soldering: distance to seating plane 1.5 mm).................... 260C 5-1 This document was created with FrameMaker 4.0.4 Characteristics (TA=25C, unless otherwise specified) Symbol Min Typ Max Unit Condition 1.1 1.5 V IF=10 mA V IR=10 mA mA VR=6 V VR=0 V,f=1 MHz Emitter Forward Voltage VF Reverse Voltage VR Reverse Current IR 0.01 Capacitance CO 25 pF Thermal Resistance RthJA 750 K/W 6 10 Detector Voltage, Collector-Emitter H11D1/H11D2 H11D3 Voltage, Emitter-Base BVCER Capacitance CCE CCB CEB 7 8 38 pF pF pF Thermal Resistance RthJA 250 K/W Coupling Capacitance CC 0.6 pF Coupling Transfer Ratio IC/IF Collector-Emitter, Saturation Voltage VCEsat Leakage Current, Collector-Emitter H11D1/H11D2 H11D3 Leakage Current, Collector-Emitter H11D1/H11D2 H11D3 ICER BVEBO 300 200 7 ICE=1 mA, RBE=1 M V V V IEB=100 A VCE=10 V, f=1 MHz VCB=10 V, f=1 MHz VEB=5 V, f=1 MHz Package % IF=10 mA, VCE=10 V, RBE=1 M 0.4 V IF=10 mA, IC=0.5 mA, RBE=1 M 100 100 nA nA VCE=200 V, RBE=1 M VCE=100 V, RBE=1 M 250 250 A A VCE=200 V, RBE=1 M, TA=100C VCE=100 V, RBE=1 M, TA=100C 20 0.25 ICER Figure 1. Switching times measurement-test circuit and waveforms Input 0 IF RL IC VCC Output td 0 10% VO 47 ton toff tpdon GND tpdof tr ts tr 10% 50% 50% 90% 90% Switching Times (typ.) IC=2 mA (to be adjusted by varying IF), RL=100, TA=25C, VCC=10 V Description Symbol Values Unit Turn-On Time tON 5 s Rise Time tR 2.5 s Turn-Off Time tOFF 6 s Fall Time tF 5.5 s H11D1/2/3 5-2 Figure 2. Current transfer ratio (typ.) VCE=10 V, TA=25C, normalized to IF=10 mA, NCTR=f(IF) Figure 5. Output characteristics (typ.) TA=25C, ICE=f(VCE, IF) Figure 8. Permissible loss diode IF= f(TA) Figure 3. Diode forward voltage (typ.) VF=f(IF,TA) Figure 6. Transistor capacitances (typ.) TA=25C, f=1 MHz, CCE=f(VCE) CCB=f (VCB), CEB=f (VEB) Figure 9. Permissible power dissipation PIOT=f(TA) Figure 4. Output characteristics (typ.) TA=25C, ICE=f(VCE, IB) Figure 7. Collector-emitter leakage current (typ.) IF=0, RBE=1 M, ICER=f(VCE) H11D1/2/3 5-3