5–1
FEATURES
• CTR at I
F
=10 mA, BV
CER
=10 V:
≥
20%
• Good CTR Linearity with Forward Current
• Low CTR Degradation
• Very High Collector-Emitter Breakdown
Voltage
- H11D1/H11D2, BV
CER
=300 V
- H11D3, BV
CER
=200 V
• Isolation T est V oltage: 5300 V AC
RMS
• Low Coupling Capacitance
• High Common Mode Transient Immunity
• Phototransistor Optocoupler in 6 Pin DIP
Package with Base Connection
• Field Effect Stable: TRIOS*
• VDE 0884 Available with Option 1
• Underwriters Lab File #E52744
• Applications
- Telecommunications
- Replace Relays
DESCRIPTION
The H11D1/2/3 are optocouplers with very high
BV
CER
. They are intended for telecommunica-
tions applications or any DC application requir-
ing a high blocking voltage.
*TRIOS
—
TR
ansparent
IO
n
S
hield
V
DE
Maximum Ratings
(T
A
=25
°
C)
Emitter
Reverse Voltage...................................................................................6 V
DC Forward Current........................................................................60 mA
Surge Forward Current (tp
≤
10
µ
s)................................................. 2.5 A
Total Power Dissipation............................................................... 100 mW
Detector
Collector-Emitter Voltage
H11D1/2 ......................................................................................300 V
H11D3 .........................................................................................200 V
Collector-Base Voltage
H11D1/2 ......................................................................................300 V
H11D3 .........................................................................................200 V
Emitter-Base Voltage.......................................................................... 7 V
Collector Current.......................................................................... 100 mA
Total Power Dissipation............................................................... 300 mW
Package
Isolation Test Voltage (between emitter and detector
refer to climate DIN 40046, part 2, Nov. 74)....................5300 VAC
RMS
Insulation Thickness between Emitter and Detector
.....................≥
0.4 mm
Creepage Distance
................................................................................≥
7 mm
Clearance Distance
................................................................................≥
7 mm
Comparative Tracking Index
(per DIN IEC 112/VDE 0303, part 1) ...............................................175
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C
.........................................................................≥
10
12
Ω
V
IO
=500 V, T
A
=100
°
C
.......................................................................≥
10
11
Ω
Storage Temperature Range..........................................–55
°
C to +150
°
C
Operating Temperature Range ......................................–55
°
C to +100
°
C
Junction Temperature......................................................................100
°
C
Soldering Temperature (max. 10 sec.,
dip soldering: distance to seating plane
≥
1.5 mm)....................260
°
C
Dimensions in inches (mm)
.010 (.25)
.014 (.35)
.110 (2.79
)
.150 (3.81
)
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
Min.
.018 (0.45)
.022 (0.55)
.
248 (6.30)
.
256 (6.50)
.335 (8.50)
.343 (8.70)
Pin One ID
6
5
4
12
3
18° typ.
.300 (7.62)
.347 (8.82)
4°
typ.
1
2
3
6
5
4
Base
Collector
Emitter
Anode
Cathode
NC
H11D1/H11D2/H11D3
PHOTOTRANSISTOR, 5.3 KV, TRIOS
HIGH BV
CER
VOLTAGE
OPTOCOUPLER
This document was created with FrameMaker 4.0.4
5–2
H11D1/2/3
Characteristics
(T
A
=25
°
C, unless otherwise specified)
Figure 1. Switching times measurement-test circuit and waveforms
Switching Times (typ.)
I
C
=2 mA (to be adjusted by varying I
F
), R
L
=100
Ω
,
T
A
=25
°
C, V
CC
=10 V
Symbol Min Typ Max Unit Condition
Emitter
Forward Voltage V
F
1.1 1.5 V I
F
=10 mA
Reverse Voltage V
R
6VI
R
=10 mA
Reverse Current I
R
0.01 10 mA V
R
=6 V
Capacitance C
O
25 pF V
R
=0 V,f=1 MHz
Thermal Resistance R
thJA
750 K/W
Detector
Voltage, Collector-Emitter
H11D1/H11D2
H11D3
Voltage, Emitter-Base
BV
CER
BV
EBO
300
200
7
V
V
V
I
CE
=1 mA, R
BE
=1 M
Ω
I
EB
=100
µ
A
Capacitance C
CE
C
CB
C
EB
7
8
38
pF
pF
pF
V
CE
=10 V, f=1 MHz
V
CB
=10 V, f=1 MHz
V
EB
=5 V, f=1 MHz
Thermal Resistance R
thJA
250 K/W
Package
Coupling Capacitance C
C
0.6 pF
Coupling Transfer Ratio I
C
/I
F
20 % I
F
=10 mA, V
CE
=10 V, R
BE
=1 M
Ω
Collector-Emitter, Saturation Voltage V
CEsat
0.25 0.4 V I
F
=10 mA, I
C
=0.5 mA, R
BE
=1 M
Ω
Leakage Current, Collector-Emitter
H11D1/H11D2
H11D3
Leakage Current, Collector-Emitter
H11D1/H11D2
H11D3
I
CER
I
CER
100
100
250
250
nA
nA
µ
A
µ
A
V
CE
=200 V, R
BE
=1 M
Ω
V
CE
=100 V, R
BE
=1 M
Ω
V
CE
=200 V, R
BE
=1 M
Ω
, T
A
=100
°
C
V
CE
=100 V, R
BE
=1 M
Ω
, T
A
=100
°
C
Description Symbol Values Unit
Turn-On Time t
ON
5
µ
s
Rise Time t
R
2.5
µ
s
Turn-Off Time t
OFF
6
µ
s
Fall Time t
F
5.5
µ
s
RL
IF
GND
VO
IC
47 Ω
VCC
Output
0
10%
50%
90% 90%
50%
10
%
ton toff
tpdof
tpdon
tdtr
ts
tr
Input
0
5–3
H11D1/2/3
Figure 5. Output characteristics (typ.)
TA=25°C, ICE=f(VCE, IF)
Figure 6. Transistor capacitances (typ.)
TA=25°C, f=1 MHz, CCE=f(VCE)
CCB=f (VCB), CEB=f (VEB)
Figure 7. Collector-emitter leakage cur-
rent (typ.) IF=0, RBE=1 MΩ, ICER=f(VCE)
Figure 8. Permissible loss diode
IF= f(TA)
Figure 9. Permissible power dissipation
PIOT=f(TA)
Figure 2. Current transfer ratio
(typ.) VCE=10 V, TA=25°C, normal-
ized to IF=10 mA, NCTR=f(IF)
Figure 3. Diode forward voltage
(typ.) VF=f(IF,TA)
Figure 4. Output characteristics
(typ.) T A=25°C, ICE=f(VCE, IB)