HGTG18N120BND - Fairchild - Datasheet.Directory

HGTG18N120BND

54A, 1200V, NPT Series N-Channel IGBT

with Anti-Parallel Hyperfast Diode

The HGTG18N120BND is a Non-Punch Through (NPT)

IGBT design. This is a new member of the MOS gated high

voltage switching IGBT family. IGBTs combine the best

features of MOSFETs and bipolar transistors. This device

has the high input impedance of a MOSFET and the low on-

state conduction loss of a bipolar transistor.

The IGBT is ideal for many high voltage switching

applications operating at moderate frequencies where low

conduction losses are essential, such as: AC and DC motor

controls, power supplies and drivers for solenoids, relays

and contactors.

Formerly Developmental Type TA49304.

Symbol

Features

• 54A, 1200V, TC = 25oC

• 1200V Switching SOA Capability

• Typical Fall Time . . . . . . . . . . . . . . . 140ns at TJ = 150oC

• Short Circuit Rating

• Low Conduction Loss

Packaging JEDEC STYLE TO-247

Ordering Information

PART NUMBER PACKAGE BRAND

HGTG18N120BND TO-247 18N120BND

NOTE: When ordering, use the entire part number.

COLLECTOR

(FLANGE)

FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713

4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637

4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986

4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767

4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

Data Sheet March 2007

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Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG18N120BND UNITS

Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 1200 V

Collector Current Continuous

At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 54 A

At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 26 A

Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 160 A

Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V

Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V

Switching Safe Operating Area at TJ = 15 0oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 100A at 1200V

Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD390 W

Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12 W/oC

Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL260 oC

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 8µs

Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 15 µs

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1. Pulse width limited by maximum junction temperature.

2. VCE(PK) = 960V, TJ = 125oC, RG = 3Ω.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 1200 - - V

Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 - - V

Collector to Emitter Leakage Current ICES VCE = 1200V TC = 25oC - - 250 µA

TC = 125oC - 300 - µA

TC = 150oC--4mA

Collector to Emitter Saturation Voltage VCE(SAT) IC = 18A,

VGE = 15V TC = 25oC - 2.45 2.7 V

TC = 150oC-3.84.2V

Gate to Emitter Threshold Voltage VGE(TH) IC = 150µA, VCE = VGE 6.0 7.0 - V

Gate to Emitter Leakage Current IGES VGE = ±20V - - ±250 nA

Switching SOA SSOA TJ = 150oC, RG = 3Ω, VGE = 15V,

L = 200µH, VCE(PK) = 1200V

100 - - A

Gate to Emitter Plateau Voltage VGEP IC = 18A, VCE = 600V - 10.5 - V

On-State Gate Charge QG(ON) IC = 18A,

VCE = 600V VGE = 15V - 165 200 nC

VGE = 20V - 220 250 nC

Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 25oC

ICE = 18A

VCE = 960V

VGE = 15V

RG = 3Ω

L = 1mH

Test Circuit (Figure 20)

-2328ns

Current Rise Time trI -1722ns

Current Turn-Off Delay Time td(OFF)I - 170 200 ns

Current Fall Time tfI - 90 140 ns

Turn-On Energy EON -1.92.4mJ

Turn-Off Energy (Note 3) EOFF -1.82.2mJ

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Current Turn-On Delay Time td(ON)I IGBT and Diode at TJ = 150oC

ICE = 18A

VCE = 960V

VGE = 15V

RG = 3Ω

L = 1mH

Test Circuit (Figure 20)

-2126ns

Current Rise Time trI -1722ns

Current Turn-Off Delay Time td(OFF)I - 205 240 ns

Current Fall Time tfI - 140 200 ns

Turn-On Energy EON -3.74.9mJ

Turn-Off Energy (Note 3) EOFF -2.63.1mJ

Diode Forward Voltage VEC IEC = 18A - 2.6 3.2 V

Diode Reverse Recovery Time trr IEC = 18A, dIEC/dt = 200A/µs - 60 75 ns

IEC = 2A, dIEC/dt = 200A/µs - 44 55 ns

Thermal Resistance Junction To Case RθJC IGBT - - 0.32 oC/W

Diode - - 0.75 oC/W

NOTE:

3. T urn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending

at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC S tandard No. 24-1 Method for Measurement

of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.

Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Typical Performance Curves Unless Otherwise Specified

FIGURE 1. DC COLLECTOR CURRENT vs CASE

TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA

TC, CASE TEMPERATURE (oC)

ICE, DC COLLECTOR CURRENT (A)

25 75 100 125 150

VGE = 15V

VCE, COLLECTOR TO EMITTER VOLTAGE (V) 1400

ICE, COLLECTOR TO EMITTER CURRENT (A)

600 800400200 1000 1200

100

120

TJ = 150oC, RG = 3Ω, VGE = 15V, L = 200µH

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FIGURE 3. OPERA TING FREQUENCY vs COLLECT OR TO

EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME

FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE

FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO

EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR T O

EMITTER CURRENT

Typical Performance Curves Unless Otherwise Specified (Continued)

ICE, COLLECTOR TO EMITTER CURRENT (A)

TJ = 150oC, RG = 3Ω, L = 1mH, VCE = 960V

fMAX, OPERATING FREQUENCY (kHz)

4020

100

TC = 75oC, VGE = 15V, IDEAL DIODE

fMAX1 = 0.05 / (td(OFF)I + td(ON)I)

RØJC = 0.32oC/W, SEE NOTES

PC = CONDUCTION DISSIPATION

(DUTY FACTOR = 50%)

fMAX2 = (PD - PC) / (EON + EOFF)TCVGE

110oC12V

15V

75oC

110oC

75oC12V

VGE, GATE TO EMITTER VOLTAGE (V)

ISC, PEAK SHORT CIRCUIT CURRENT (A)

tSC, SHORT CIRCUIT WITHSTAND TIME (µs)

12 13 14 15 16

100

150

200

300

tSC

ISC

250

VCE = 960V, RG = 3Ω, TJ = 125oC

024

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

ICE, COLLECTOR TO EMITTER CURRENT (A)

6810

PULSE DURATION = 250µs

DUTY CYCLE < 0.5%, VGE = 12V

TC = -55oCTC = 25oC

TC = 150oC

ICE, COLLECTOR TO EMITTER CURRENT (A)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

0246810

100

TC = -55oCTC = 25oC

TC = 150oC

DUTY CYCLE < 0.5%, VGE = 15V

PULSE DURATION = 250µs

EON2, TURN-ON ENERGY LOSS (mJ)

ICE, COLLECTOR TO EMITTER CURRENT (A)

15105

25 30

035 40

TJ = 25oC, VGE = 12V, VGE = 15V

TJ = 150oC, VGE = 12V, VGE = 15V

RG = 3Ω, L = 1mH, VCE = 960V

3.5

ICE, COLLECTOR TO EMITTER CURRENT (A)

EOFF, TURN-OFF ENERGY LOSS (mJ)

0.5 15105

1.0

2.5

1.5

3.0

4.0

4.5

25 30

RG = 3Ω, L = 1mH, VCE = 960V

TJ = 25oC, VGE = 12V OR 15V

TJ = 150oC, VGE = 12V OR 15V

35 40

2.0

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FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO

EMITTER CURRENT FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO

EMITTER CURRENT

FIGURE 1 1. TURN-OFF DELAY TIME vs COLLECTOR TO

EMITTER CURRENT FIGURE 12. F ALL TIME vs CO LLECTOR T O EMITTER

CURRENT

FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS

Typical Performance Curves Unless Otherwise Specified (Continued)

ICE, COLLECTOR TO EMITTER CURRENT (A)

tdI, TURN-ON DELAY TIME (ns)

510

25 30 35 40

RG = 3Ω, L = 1mH, VCE = 960V

TJ = 25oC, TJ = 150oC, VGE = 12V

TJ = 25oC, TJ = 150oC, VGE = 15V

ICE, COLLECTOR TO EMITTER CURRENT (A)

trI, RISE TIME (ns)

305

252015 4035

100

120 RG = 3Ω, L = 1mH, VCE = 960V

TJ = 25oC, TJ = 150oC, VGE = 12V

TJ = 25oC OR TJ = 150oC, VGE = 15V

10 205

200

100

150

ICE, COLLECTOR TO EMITTER CURRENT (A)

td(OFF)I, TURN-OFF DELAY TIME (ns)

350

250

300

4035

RG = 3Ω, L = 1mH, VCE = 960V

VGE = 12V, VGE = 15V, TJ = 25oC

VGE = 12V, VGE = 15V, TJ = 150oC

ICE, COLLECTOR TO EMITTER CURRENT (A)

tfI, FALL TIME (ns)

105

100

150

200

250

3020 4035

RG = 3Ω, L = 1mH, VCE = 960V

125

175

225

TJ = 25oC, VGE = 12V OR 15V

TJ = 150oC, VGE = 12V OR 15V

ICE, COLLECTOR TO EMITTER CURRENT (A)

136891012

VGE, GATE TO EMITTER VOLTAGE (V)

100

150

14 15

200

TC = 25oC

TC = 150oCTC = -55oC

PULSE DURATION = 250µs

DUTY CYCLE < 0.5%, VCE = 20V

VGE, GATE TO EM ITTER VOLTAGE (V)

QG, GATE CHARGE (nC)

0010050 150

VCE = 400V

VCE = 800V

IG(REF) = 2mA, RL = 33.3Ω, TC = 25oC

VCE = 1200V

200

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FIGURE 15. CAP ACITANCE vs COLLECTOR TO EMITTER

VOLTAGE FIGURE 16. COLL ECTOR TO EMITTER ON-STATE VOLTAGE

FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE

FIGURE 18. DIODE FORW ARD CURRENT vs FORW ARD

VOLTAGE DROP FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT

Typical Performance Curves Unless Otherwise Specified (Continued)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

C, CAPACIT ANCE (nF)

CRES

0 5 10 15 20 25

CIES

COES

6FREQUENCY = 1MHz

ICE, COLLECTOR TO EMITTER CURRENT (A)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

30 DUTY CYCLE < 0.5%, TC = 110oC

PULSE DURATION = 250µs

VGE = 10V

VGE = 15V OR 12V

SINGLE PULSE

0.5

0.2

0.1

0.05

0.02

t1, RECTANGULAR PULSE DURATION (s)

10-2

10-1

100

10-5 10-3 10-2 10-1 100

10-4

DUTY FA CTOR, D = t1 / t2

PEAK TJ = (PD X ZθJC X RθJC) + TC

ZθJC, NORMALIZED THERMAL RESPONSE

0.01

VF, FORWARD VOLTAGE (V)

IF, FORWARD CURRENT (A)

100

012 3 45

150oC25oC

IF, FORWARD CURRENT (A)

201

t, RECOVERY TIMES (ns)

trr

TC = 25oC, dIEC/dt = 200A/µs

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Handling Precautions for IGBTs

Insulated Gate Bipolar T r ansistors are susceptible to

gate-insulation damage by the ele ctrost a tic di scharge of

energy through the devices. Whe n handling the se devices,

care should be exercised to assure tha t the st atic charg e built

in the handler’s body capaci t ance is not discha rged thro ugh

the device. With proper h andling and appli cation procedures,

however, IGBTs are currently being extensively used in

production by numerous equipment manufacture rs in military,

industrial and consumer applications, with virtually no damage

problems due to electrost atic disch arge. IGBTs can be

handled safely if the following basic pre cautions are t ake n:

1. Prior to assembly into a circuit, all leads should be kept

shorted together either by the use of metal shorting

springs or by the insertion into conductive material such

as “ECCOSORBD™ LD26” or equivalent.

2. When devices are removed by hand from their carriers,

the hand being used should be grounded by any suitable

means - for example, with a metallic wristband.

3. Tips of soldering irons should be grounded.

4. Devices should never be inserted into or removed from

circuits with power on.

5. Gate Volt age Ratin g - Never exceed the gate-voltage

rating of VGEM. Exceeding the rated VGE can result in

permanent damage to the oxide layer in the gate region.

6. Gate Termination - The gates of these devices are

essentially capacitors. Circuits that leave the gate

open-circuited or floating should be avoid ed. These

conditions can result in turn-on of the device due to

voltage buildup on the input capacitor due to leakage

currents or pickup.

7. Gate Protection - These devices do not have an internal

monolithic Zener diode from gate to emitter. If gate

protection is required an external Zener is recommended.

Operating Frequency Information

Operating frequency information for a typical device

(Figure 3) is presented as a guide for estimating device

performance for a specific application. Other typical

frequency vs collector current (ICE) plots are possible using

the information shown for a typical unit in Figures 5, 6, 7, 8, 9

and 11. The operating frequency plot (Figure 3) of a typical

device shows fMAX1 or fMAX2; whichever is smaller at each

point. The information is based on measurements of a

typical device and is bounded by the maximum rated

junction temperature.

fMAX1 is defined by fMAX1 = 0.05/(t d(OFF)I+ td(ON)I).

Deadtime (the denominator) has been arbitrarily held to 10%

of the on-state time for a 50% duty factor. Other definitions

are possible. td(OFF)I and td(ON)I are defi ned in Figure 21 .

Device turn-off delay can establish an additional frequency

limiting condition for an application other than TJM. td(OFF)I

is important when controlling output ripple under a lightly

loaded condition.

fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The

allowable dissip ation (PD) is defined by PD = (TJM - TC)/RθJC.

The sum of device switching and conduction losses must not

exceed PD. A 50% duty factor was used (Figure 3) and the

conduction losses (PC) are approximated by

PC=(V

CE xI

CE)/2.

EON and EOFF are defined in the switching waveforms

shown in Figure 21. EON is the integral of the instant aneous

power loss (ICE x VCE) during turn-on and EOFF is the

integral of the instant aneous power loss (ICE x VCE) during

turn-off. All tail losses are included in the calculation for

EOFF; i.e., the collector current equals zero (ICE = 0).

Test Circuits and Waveforms

FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 21. SWITCHING TEST WAVEFORMS

RG = 3Ω

L = 1mH

VDD = 960V

HGTG18N120BND

tfI

td(OFF)I trI

td(ON)I

10%

90%

10%

90%

VCE

ICE

VGE

EOFF

EON

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which, (a) are intended for surgical implant into the body or

(b) support or sustain life, and (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor

reserves the right to make changes at any time without notice to improve

design.

Obsolete Not In Production This datasheet contains specifications on a product that has been

discontinued by Fairchild Semiconductor. The datasheet is printed for

reference information only.

Rev. I24

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