Ka-Band 2W Power Amplifier TGA4516-TS Key Features * * * * * * 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq (1.9A under RF Drive) 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions: 2.921 x 2.438 mm Primary Applications * * * Military Radar Systems Ka-Band Sat-Com Point to Point Radio Fixtured Data Product Description The TGA4516 provides >33 dBm saturated output power, and has typical gain of 18 dB at a bias of 6V and 1050mA (Idq). The current rises to 1.9A under RF drive. 25 20 10 5 0 -5 S22 -10 S11 -15 -20 -25 30 This HPA is ideally suited for many applications such as Military Radar Systems, Ka-band Sat-Com, and Pointto-Point Radios. 32 34 36 38 40 38 40 Frequency (GHz) Pout @ Pin =20dBm 35 The TGA4516 is 100% DC and RF tested on-wafer to ensure performance compliance. 34 Pout (dBm) Lead-Free & RoHS compliant. S21 15 S-Parameters (dB) The TriQuint TGA4516 is a High Power MMIC Amplifier for Ka-band applications. The part is designed using TriQuint's 0.15um power pHEMT process and is soldered to a CuMo thermal spreader. The small chip size is achieved by utilizing TriQuint's 3 metal layer interconnect (3MI) design technology that allows compaction of the design over competing products. VD = 6V, ID = 1050mA 33 32 31 30 30 32 34 36 Frequency (GHz) Datasheet subject to change without notice. 1 TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 November 2011 (c) Rev C Info-mmw@tqs.com TGA4516-TS TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER + Positive Supply Voltage - Negative Supply Voltage Range V V + I NOTES 6.5 V 2/ -5 TO 0 V 3A 2/ 3/ Gate Supply Current 85 mA 3/ PIN Input Continuous Wave Power 24 dBm PD Power Dissipation 12.7 W IG TCH TM TSTG Positive Supply Current VALUE Operating Channel Temperature Mounting Temperature (30 Seconds) Storage Temperature 2/ o 200 C 4/ o 320 C o -65 to 150 C 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ Total current for the entire MMIC. 4/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 2 TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 November 2011 (c) Rev C Info-mmw@tqs.com TGA4516-TS TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 C, Nominal) PARAMETER TYPICAL UNITS 6 V Quiescent Current 1050 mA Frequency Range 30 - 40 GHz Small Signal Gain, S21 18 dB Input Return Loss, S11 10 dB Output Return Loss, S22 7 dB Power @ saturated, Psat 33 dBm Drain Operating 3 TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 November 2011 (c) Rev C Info-mmw@tqs.com TGA4516-TS TABLE III THERMAL INFORMATION Parameter Thermal Resistance, JC, to back of thermal spreader 1/ Channel Temperature (Tch), and Median Lifetime (Tm) Channel Temperature (Tch), and Median Lifetime (Tm) Under RF Drive Condition Rating Tbase = 70 C JC = 8.3 C/W Tbase = 70 C, Vd = 6 V, Id = 1.050 A, Pdiss = 6.3 W Tch = 122 C Tm = 2.9 E+7 Hours Tbase = 70 C, Vd = 6 V, Id = 1.9 A, Pout = 33 dBm, Pdiss = 9.4 W Tch = 148 C Tm = 1.3E+6 Hours 1/ See Sheet 8, TGA4516 on Thermal Spreader, Note 5 4 TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 November 2011 (c) Rev C Info-mmw@tqs.com TGA4516-TS Fixtured Performance Vds=6V, Idq=1050mA 25 20 S21 15 S-Parameters (dB) 10 5 0 -5 S22 -10 -15 S11 -20 -25 -30 -35 -40 28 30 32 34 36 38 40 42 Frequency (GHz) TGA4516 Pout @ Pin =20dBm Vds=6V, Idq=1050mA 35 Pin=20dBm 34 33 Pout (dBm) 32 31 30 29 28 27 26 25 28 30 32 34 36 38 40 42 Fre que ncy (GHz) 5 TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 November 2011 (c) Rev C Info-mmw@tqs.com TGA4516-TS Fixtured Performance T GA4516 Pout vs. Pin freq=35GHz, Vds=6V, Idq=1050mA Pout Large Signal Gain 35 Pout (dBm) 30 25 30 20 25 15 20 10 15 5 10 0 -10 -5 0 5 10 15 20 Gain (dB) 40 25 Pin (dBm) T GA4516 Ids vs. Pin freq=35GHz, Vds=6V, Idq=1050mA 40 2200 Pout 2000 30 1800 25 1600 20 1400 15 1200 10 1000 -10 -5 0 5 10 15 20 IDS (mA) Pout (dBm) Ids 35 25 Pin (dBm) 6 TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 November 2011 (c) Rev C Info-mmw@tqs.com TGA4516-TS Mechanical Drawing Units: Millimeters [inches] Thickness: 0.100 [0.004] (reference only) Chip edge to bond pad dimensions are shown to center of bond pad Chipsize: 2.79 x 2.315 [0.110 x 0.091] +/- 0.51 [0.002] RF Ground is backside of MMIC Bond pad #1 Bond pad #2 Bond pad #3 Bond pad #4 Bond pad #5 Bond pad #6 Bond pad #7 Bond pad #8 Bond pad #9 Bond pad #10 (RF Input) (Vg2) (Vd12) (Vg3) (Vd3) (RF Output) (Vd3) (Vg3) (Vd12) (Vg2) 0.100 x 0.200 0.100 x 0.100 0.100 x 0.200 0.100 x 0.100 0.100 x 0.100 0.100 x 0.200 0.100 x 0.200 0.100 x 0.100 0.100 x 0.200 0.100 x 0.100 [0.004 x 0.008] [0.004 x 0.004] [0.004 x 0.008] [0.004 x 0.004] [0.004 x 0.004] [0.004 x 0.008] [0.004 x 0.008] [0.004 x 0.004] [0.004 x 0.008] [0.004 x 0.004] GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 November 2011 (c) Rev C Info-mmw@tqs.com 7 Mechanical Drawing TGA4516-TS TGA4516 on Thermal Spreader Notes: 1. Dimensions are in mm [inches]. 2. Dimension limits apply after plating. 3. Dimension of surface roughness is in micrometer (microinch). 4. Tolerances unless otherwise stated +0.075, -0.025 [+0.003, -0.001] 5. Material: Copper and Molybdenum metal matrix material (AMC8515) with a CTE of 7.0 ppm/C. 6. Plating: Gold (Au) 1.27-2.54 um per ASTM B 488, Type 1, Code A. over Nickel (Ni) 2.5-7.5 um per QQ-N-290, Class 1. 7. MMIC is attached to thermal spreader using AuSn solder GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 November 2011 (c) Rev C Info-mmw@tqs.com 8 TGA4516-TS Chip Assembly Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 November 2011 (c) Rev C Info-mmw@tqs.com 9 TGA4516-TS Assembly Process Notes Component storage, placement, and adhesive attachment assembly notes: * * * * * Devices must be stored in a dry nitrogen atmosphere. Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Attachment of the thermal spreader should use an epoxy with high thermal conductivity. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Devices with small pad sizes should be bonded with 0.0007-inch wire. Ordering Information Part Package Style TGA4516-TS GaAs MMIC Die on Thermal Spreader GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 November 2011 (c) Rev C Info-mmw@tqs.com 10