TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 Info-mmw@tqs.com
November 2011 © Rev C
1
Ka-Band 2W Power Amplifier TGA4516-TS
Key Features
•30 - 40 GHz Bandwidth
•> 33 dBm Nominal Psat @ Pin = 20dBm
•18 dB Nominal Gain
•Bias: 6 V, 1050 mA Idq (1.9A under RF Drive)
•0.15 um 3MI MMW pHEMT Technology
•Thermal Spreader Dimensions:
2.921 x 2.438 mm
Primary Applications
•Military Radar Systems
•Ka-Band Sat-Com
•Point to Point Radio
Fixtured Data
VD= 6V, ID= 1050mA
-25
-20
-15
-10
-5
0
5
10
15
20
25
30 32 34 36 38 40
Frequency (GHz)
S-Parameters (dB)
S21
S22
S11
Pout @ Pin =20dBm
30
31
32
33
34
35
30 32 34 36 38 40
Frequency (GHz)
Pout (dBm)
Product Description
The TriQuint TGA4516 is a High Power MMIC Amplifier
for Ka-band applications. The part is designed using
TriQuint’s 0.15um power pHEMT process and is
soldered to a CuMo thermal spreader. The small chip
size is achieved by utilizing TriQuint’s 3 metal layer
interconnect (3MI) design technology that allows
compaction of the design over competing products.
The TGA4516 provides >33 dBm saturated output
power, and has typical gain of 18 dB at a bias of 6V and
1050mA (Idq). The current rises to 1.9A under RF drive.
This HPA is ideally suited for many applications such as
Military Radar Systems, Ka-band Sat-Com, and Point-
to-Point Radios.
The TGA4516 is 100% DC and RF tested on-wafer to
ensure performance compliance.
Lead-Free & RoHS compliant.
Datasheet subject to change without notice.
TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 Info-mmw@tqs.com
November 2011 © Rev C
2
SYMBOL PARAMETER VALUE NOTES
V
+
Positive Supply Voltage 6.5 V 2/
V
-
Negative Supply Voltage Range -5 TO 0 V
I
+
Positive Supply Current 3 A 2/ 3/
⏐I
G
⏐ Gate Supply Current 85 mA 3/
P
IN
Input Continuous Wave Power 24 dBm
P
D
Power Dissipation 12.7 W 2/
T
CH
Operating Channel Temperature 200
o
C 4/
T
M
Mounting Temperature (30 Seconds) 320
o
C
T
STG
Storage Temperature -65 to 150
o
C
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not
exceed P
D
.
3/ Total current for the entire MMIC.
4/ Junction operating temperature will directly affect the device median time to failure (MTTF).
For maximum life, it is recommended that junction temperatures be maintained at the lowest
possible levels.
TGA4516-TS
TABLE I
MAXIMUM RATINGS 1/
TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 Info-mmw@tqs.com
November 2011 © Rev C
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TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25 °C, Nominal)
PARAMETER TYPICAL UNITS
Drain Operating 6 V
Quiescent Current 1050 mA
Frequency Range 30 - 40 GHz
Small Signal Gain, S21 18 dB
Input Return Loss, S11 10 dB
Output Return Loss, S22 7 dB
Power @ saturated, Psat 33 dBm
TGA4516-TS
TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 Info-mmw@tqs.com
November 2011 © Rev C
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TABLE III
THERMAL INFORMATION
1/ See Sheet 8, TGA4516 on Thermal Spreader, Note 5
Parameter Condition Rating
Thermal Resistance, θJC, to
back of thermal spreader 1/ Tbase = 70 °CθJC = 8.3 °C/W
Channel Temperature (Tch),
and Median Lifetime (Tm)
Tbase = 70 °C, Vd = 6 V, Id = 1.050 A,
Pdiss = 6.3 W
Tch = 122 °C
Tm = 2.9 E+7 Hours
Channel Temperature (Tch),
and Median Lifetime (Tm)
Under RF Drive
Tbase = 70 °C, Vd = 6 V, Id = 1.9 A,
Pout = 33 dBm, Pdiss = 9.4 W
Tch = 148 °C
Tm = 1.3E+6 Hours
TGA4516-TS
TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 Info-mmw@tqs.com
November 2011 © Rev C
5
Fixtured Performance
TGA4516 Pout @ Pin =20dBm
Vds=6V, Idq=1050mA
25
26
27
28
29
30
31
32
33
34
35
28 30 32 34 36 38 40 42
Fre quency (GHz)
Pout ( dB m)
Pin=20dBm
TGA4516-TS
Vd s=6V, Idq=1050mA
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
28 30 32 34 36 38 40 42
Frequency (GHz)
S-Parame te rs (dB)
S11
S22
S21
TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 Info-mmw@tqs.com
November 2011 © Rev C
6
Fixtured Performance
TGA4516 Pout vs. Pin
freq=35GHz, Vd s =6V, Idq=1050 mA
10
15
20
25
30
35
40
-10-5 0 5 10152025
Pin ( dBm )
Pout (dBm)
0
5
10
15
20
25
30
Gain (dB)
Pout
Large Signal Gain
TGA4516-TS
TGA4516 Ids vs. P in
freq=35GHz, Vds =6V, Idq=1050 mA
10
15
20
25
30
35
40
-10-5 0 5 10152025
Pin (dBm)
Pout (dBm)
1000
1200
1400
1600
1800
2000
2200
IDS (mA)
Pout
Ids
TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 Info-mmw@tqs.com
November 2011 © Rev C
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Mechanical Drawing TGA4516-TS
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Units: Millimeters [inches]
Thickness: 0.100 [0.004] (reference only)
Chip edge to bond pad dimensions are shown to center of bond pad
Chipsize: 2.79 x 2.315 [0.110 x 0.091] +/- 0.51 [0.002]
RF Ground is backside of MMIC
Bond pad #1 (RF Input) 0.100 x 0.200 [0.004 x 0.008]
Bond pad #2 (Vg2) 0.100 x 0.100 [0.004 x 0.004]
Bond pad #3 (Vd12) 0.100 x 0.200 [0.004 x 0.008]
Bond pad #4 (Vg3) 0.100 x 0.100 [0.004 x 0.004]
Bond pad #5 (Vd3) 0.100 x 0.100 [0.004 x 0.004]
Bond pad #6 (RF Output) 0.100 x 0.200 [0.004 x 0.008]
Bond pad #7 (Vd3) 0.100 x 0.200 [0.004 x 0.008]
Bond pad #8 (Vg3) 0.100 x 0.100 [0.004 x 0.004]
Bond pad #9 (Vd12) 0.100 x 0.200 [0.004 x 0.008]
Bond pad #10 (Vg2) 0.100 x 0.100 [0.004 x 0.004]
TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 Info-mmw@tqs.com
November 2011 © Rev C
8
Mechanical Drawing
TGA4516 on Thermal Spreader
TGA4516-TS
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Notes:
1. Dimensions are in mm [inches].
2. Dimension limits apply after plating.
3. Dimension of surface roughness is in micrometer (microinch).
4. Tolerances unless otherwise stated +0.075, -0.025 [+0.003, -0.001]
5. Material:
Copper and Molybdenum metal matrix material (AMC8515) with a CTE of 7.0 ppm/C.
6. Plating:
Gold (Au) 1.27-2.54 um per ASTM B 488, Type 1, Code A.
over
Nickel (Ni) 2.5-7.5 um per QQ-N-290, Class 1.
7. MMIC is attached to thermal spreader using AuSn solder
TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 Info-mmw@tqs.com
November 2011 © Rev C
9
Chip Assembly Diagram TGA4516-TS
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TriQuint Semiconductor www.triquint.com (972) 994-8465 Fax: (972) 994-8504 Info-mmw@tqs.com
November 2011 © Rev C
10
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA4516-TS
Component storage, placement, and adhesive attachment assembly notes:
• Devices must be stored in a dry nitrogen atmosphere.
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Attachment of the thermal spreader should use an epoxy with high thermal conductivity.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.
Ordering Information
Part Package Style
TGA4516-TS GaAs MMIC Die on Thermal Spreader
