"SAMSUNG SEMICONDUCTOR - INC LYE D Desens o0g?La i 2N6518 PNP EPITAXIAL SILICON TRANSIST OR T-29-21 HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS (T,=25C) Characteristic Symbol Rating Unit _ | Collector-Base Voltage Veso -250 Vv Cotlector-Emitter Voltage Voeo -250 v Emitter-Base. Voltage i Veso 5 Vv Collector Current | kk ~500 mA > Base Current a) +250 mA ; Collector Dissipation Po 0.625 wo Derate above 25C 5 mw/c Junction Temperature Tj 150 C + Storage Temperature Tstg 55~150 c : 1, Emitter 2. Base 3. Collector Refer to 2N6520 for graphs ELECTRICAL CHARACTERISTICS (T,=25C) | Characteristic Symbo!. Test Condition Min Max Unit Collector Base Breakdown Voltag ! BVceo : lc=100pA, le=O -250 Vv *Collector Emitter Breakdown Voltage BVceo t lb>=1mA, Igp=O 250 Vv Emitter Base Breakdown Voltage BV eso le=10pA, k=O -5 Vv Collector Cutoff Current . |eso Vca= 150V, le=O ~50 nA Emitter Cutoff Current lepo Ves=4V, lc=O 50 nA *DC Current Gain hee Voe=10V, lk=1mA 35 Vee=~10V, lb=10MA 50 Vce= 10V, lc=~30mA 50 300. Vce=10V, b=-50mA 45 220 Vee=~10V, l= 100mA 25 . Collector-Emitter Saturation Voltage Vee (sat) | tb=10mA, la=ImA -0.30 Vv lb=20mA, lp=-2mA -0.35 Vv fc=-30mA, la=3mA 0.50 v ; : lk=50mA, le=5mA -1 Vv Base-Emitter Saturation Voltage Vee (sat) tb-=10mA, lp=1MmA -0.75 Vv [c=-20mA, lgs=2mA ~0.85 Vv lce=-30mA, lp=-3mA 0.90 Vv Base Emitter On Voltage Vee (on) Vce= 10V, l-=100MA ~2 Vv *Current Gain Bandwidth Product fr Vee= 20V, ic=10mA, f=2O0MHz 40 200 | MHz Collector Base Capacitance Ceb Vea=20V, =O, f=1MHz 6 pF Emitter Base Capacitance Ceb Ves=0.5V, Ilc=O0, f=1MHz 100 pF Tum On Time ton Vee (off}=-2V, Vec=100V 200 ns fb=50mA, fg1 =10mMA . Turn Off Time . toff . | Vec=100V, ice=50mA . 3.5 ns lal =[g2=10mA . = Pulse Test: PWS300us, Duty Cycles2% cee SAMSUNG SEMICONDUCTOR 468