uN <> AF 106 Germanium-PNP-Mesa-HF-Transistor Germanium PNP Mesa RF Transistor Anwendungen: Vor-, Misch- und Oszillatorstufen bis 260 MHz Applications: Pre, mixer and oscillator stages up to 260 MHz ec 7) oO ij 2 x 2 = py c o | 7 ra al | ~ a 2 r Not for new developments Besondere Merkmale: Features: @ Leistungsverstarkung 17,5 dB @ Power gain 17,5 dB @ RauschmaB <7,5 dB @ Noise figure <7.5 dB @ Riickwirkungszeitkonstante 6 ps @ Feedback time constant 6 ps Abmessungen in mm Dimensions in mm AnschluB ,,S mit Gehause verbunden Terminal ,S connected with case Normgehause Case 18A4 DIN 41 876 JEDEC TO 72 Gewicht - Weight max. 0,5g Absolute Grenzdaten Absolute maximum ratings Kollektor-Basis-Sperrspannung ~UcBo 25 Vv Collector-base voltage Kollektor-Emitter-Sperrspannung - UcEO 18 Vv Collector-emitter voltage Emitter-Basis-Sperrspannung -UeBRO 0,3 Vv Emitter-base voltage Kollektorstrom ~Io 10 mA Collector current Gesamtverlustleistung Total power dissipation lamb = 45C Prot 60 mw Sperrschichttemperatur tj 90 C Junction temperature Lagerungstemperaturbereich 'stg -30 ... +90 C Storage temperature range B 2/V.2. 472/0875A1 1AF 106 Warmewiderstande Thermal resistances Sperrschicht-Umgebung Junction ambient Sperrschicht-Gehause Junction case Statische KenngrB8en DC characteristics lamb = 25C Kollektorreststrorm Collector cut-off current -Ucp =12V Kollektor-Basis-Durchbruchspannung Collector-base breakdown voltage Io = 100 pA Koliektor-Emitter-Durchbruchspannung Collector-emitter breakdown voltage Ig = 0,5 mA Emitter-Basis-Durchbruchspannung Emitter-base breakdown voltage ~TIe = 100 pA Basisstrom Base current Uce =12 V, ~I =1mA -UceE = 6V, Io =2mA Basis-Emitter-Spannung Base-emitter voltage Uce =12V, -Io =1mA -UcE = 6V, -Io =2mA Kollektor-Basis-Gleichstromverhdaltnis DC forward current transfer ratio -UcE =12 V, -Io =1mA Ucg = 6V, -Ic =2mA Dynamische KenngrBen AC characteristics lamb = 25C Transitfrequenz Gain bandwidth product Uop = 12V, Ig = 1 mA, f= 100 MHz Maximale Schwingfrequenz Maximum frequency of oscillation Uop = 12 V, -Io =1mA RthJa Rihsc ~IcBo ~ UsBR)CBO UBR)CEO Upr)EBO Ip ip ~ Upe ~Upe AFE EE ST Smax Min. 25 18 0,3 250 280 25 Typ. 0,5 20 29 325 340 50 70 220 1,2 Max. 750 C/W 400 C/W 10 pA v Vv Vv 40 pA pA 380 mv 400 mv MHz GHzAF 106 Riickwirkungskapazitat Feedback capacitance -Ucp =12 V, -lo =1mA, f= 450 kHz Cire Riickwirkungszeitkonstante Feedback time constant ~Ucp = 10V,-Ig = 1 mA, f= 2,5 MHz "bb Che RauschmaB Noise figure ~Ucp =12 Vv, -lo =1 mA, Rg = 60 Q, Jf = 200 MHz F Leistungsverstarkung Power gain Ucp = 12V,-Ig = 3 mA, f= 200 MHz Gop) 75577 Ttk + 1 kQ C4 2nF Ly RG L2 Ry Cy Co Ke ote - Ure + +6 Uce - MeBschaltung fir: G Test circuit for: pb ') siehe MeBschaltung see test circuit Min. Typ. Max. 0,45 5,5 7,5 14 17,5 C1=6,5...18 pF C= 9,5...20 pF Cg = 3...10 pF C4= 15...5pF Ly= 3Wdg/s6,5.81Ag La=L4=20 Wdg/8 3.5, g0,6 Culs.K 80 k1 Lg=2Wdg/9 6.5.61 Ag Rg=RiL= 602 Ankopplung an Ry so. daB p= 9200 Coupled at Ry so that y= 920 Q pF ps dB dBAF 106 Vierpol KenngrBen Two port characteristics lamb 25C Emitterschaltung Common emitter configuration -Upp = 12V, -Ig = 1 mA, f= 1 KHz KurzschluB-Stromverstarkung Short circuit forward current transter ratio Basisschaltung Common base configuration -Ucp = 6 V, -Ig = 1 mA, f = 100 MHz KurzschluB-Eingangsadmittanz Short circuit input admittance KurzschluB-Riickwartssteilheit Short circuit reverse transfer admittance KurzschluB-Vorwartssteilheit Short circuit forward transfer admittance KurzschluB-Ausgangsadmittanz Short circuit output admittance Basisschaltung Common base configuration Upg = 12V, -Ig = 1 mA, f = 200 MHz KurzschluB-Eingangsadmittanz Short circuit input admittance KurzschluB-Riickwartssteilheit Short circuit reverse transfer admittance KurzschluB-Vorwartssteilheit Short circuit forward transfer admittance Kurzschlu8-Ausgangsadmittanz Short circuit output admittance Min. Mte 30 Sib ~ bib Re (rp) -Im (rp) ~ <r | *t | P fb Sob Cob Typ. 65 36 0,04 0,48 0,76 33,5 142 0,09 1,6 31 12 0,5 0,4 27 115 0,15 1,5 Max. mS ms mS mS pF mS ps pF mS mS mS mS pF mS ms pFAF 106 CBO 10 0,5 0,1 20 Ue = 5V lamb = 25 C 20 40 ~ fg = 80 UA 60 pA 72723 tt Ue = 5 V famb = 25 C 60 SOLA Jp = 72721 TK lamb = 25C 10 15 V UEAF 106 ~Upe = 450 mV \ 72727 Thk 6Vv fy tamb = 25 C 300 MHz lamb = 25 C 200 100 7273) TH f= 200 MHz ~ =12V le = tmA Rg = 602 3 amb = 25 C ~ = ig =5mA Log 10 Vv Cc lamb = 25 C 400 Miz 0,1 1 10 100 MHz f lieAF 106 80 Ugg z5 v tamb = 25 C 15 200 MHz 20 40 72733 Th fon] 0,05 mS Re (re) 72728 tk ~Ugp = 10 tamb = 28C 100 MHz 60 80 mS Sib Im (fe) mS 40 60 80 120 40 f= 40 MHz Im ( Mb) 100 MHz 7\/ -0,5 mS -1,0 400 MHz -2,04- 4-02 80 mS Re (tg) 0,2 Re Orb) -AF 106 | 72730 Tthk Upp = 10 v p tamb = 25 C Im O'fp) v fb he 2,0 mS 80 mS 71g = 0,5 mA 1mA -ig = Sma f= 40 MHz 100 MHz 60 40 1,0 20 0.5 f= 40 MHz oO 0 0,2 03 04 mS Re (54) Soe 80h