NUS1204MNT1G - ON Semiconductor - Datasheet.Directory

June, 2006 − Rev. 1 Publication Order Number:

NUS1204MN/D

NUS1204MN

Overvoltage Protection IC

with Integrated MOSFET

This device represents a new level of safety and integration by

combining the NCP304 overvoltage protection circuit (OVP) with a

−12 V P−Channel power MOSFET. It is specifically designed to

protect sensitive electronic circuitry from overvoltage transients and

power supply faults. During such hazardous events, the IC quickly

disconnects the input supply from the load, thus protecting the load

before any damage can occur.

The OVP IC is optimized for applications using an external AC−DC

adapter or a car accessory charger to power a portable product or

recharge its internal batteries. It has a nominal overvoltage threshold

of 4.725 V which makes it ideal for single cell Li−Ion as well as 3/4

cell NiCD/NiMH applications.

Features

•OvervoltageTurn−Off Time of Less Than 20 ms

•Accurate Voltage Threshold of 4.725 V, Nominal

•High Accuracy Undervoltage Threshold of 2.0%

•−12 V Integrated P−Channel Power MOSFET

•Low RDS(on) = 75 mW @ −4.725 V

•Low Profile 2.0 x 2.0 mm WDFN Package Suitable for Portable

Applications

•Maximum Solder Reflow Temperature @ 260°C

•This device is manufactured with a Pb−Free external lead finish only.

Benefits

•Provide Battery Protection

•Integrated Solution Offers Cost and Space Savings

•Integrated Solution Improves System Reliability

Applications

•Portable Computers and PDAs

•Cell Phones and Handheld Products

•Digital Cameras

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Device Package Shipping†

ORDERING INFORMATION

† For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

NUS1204MNT1G WDFN6

(Pb−Free) 3000 Tape & Ree

PIN CONNECTIONS

U2 = Specific Device Code

M = Date Code

G= Pb−Free Package

U2 M

WDFN6

CASE 506AN

MARKING

DIAGRAM

GATE

OUT

GND

DRAIN

SOURCE

(Top View)

NUS1204MN

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Figure 1. Simplified Schematic

−

SOURCE

GND

OUT

GATE

Schottky

Diode

LOADC1

P−CH

Vref

AC/DC Adapter of

Accessory Charger

DRAIN

PIN FUNCTION DESCRIPTIONS

Pin # Symbol Pin Description

1 GATE Gate pin of the P−Channel Power MOSFET

2 OUT This signal drives the gate of a P−channel Power MOSFET. It is controlled by the voltage level on the IN pin.

When an overvoltage event is detected, the OUT pin is driven to within 1.0 V of VIN in less than 20 msec

provided that gate and stray capacitance is less than 12 nF.

3, 7 GND Circuit Ground

4 IN This pin senses an external voltage point. If the voltage on this input rises above the overvoltage threshold

(VTH), the OUT pin will be driven to within 1.0 V of VIN, thus disconnecting the P−Channel Power MOSFET.

The nominal threshold level is 4.725 V and this threshold level can be increased with the addition of an external

resistor between the IN pin and the adapter.

5 SOURCE Source pin of the P−Channel Power MOSFET

6, 8 DRAIN Drain pin of the P−Channel Power MOSFET

OVERVOLTAGE PROTECTION CIRCUIT TRUTH TABLE

IN OUT

<Vth GND

>Vth VIN

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MAXIMUM RATINGS (TA = 25°C unless otherwise stated)

Rating Pin Symbol Min Max Unit

OUT Voltage to GND 2 VO−0.3 12 V

Input Pin Voltage to GND 4 Vinput −0.3 12 V

Maximum Power Dissipation (Note 1)− PD− 0.96 W

Thermal Resistance Junction−to−Air (Note 1)OVP IC

P−Channel FET − RθJA − 130

130 °C/W

Junction Temperature − TJ− 150 °C

Operating Ambient Temperature − TA−40 85 °C

Storage Temperature Range − Tstg −65 150 °C

ESD Performance (HBM) (Note 2)2,3,4 − 2.5 − kV

Drain−to−Source Voltage VDSS −12 V

Gate−to−Source Voltage VGS −8 8 V

Continuous Drain Current, Steady State, TA = 25°C (Note 1) ID−0.6 A

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

2. Human body model (HBM): MIL STD 883C Method 3015−7, (R = 1500 W, C = 100 pF, F = 3 pulses delay 1 s).

ELECTRICAL CHARACTERISTICS (TA= 25°C, Vcc = 6.0 V, unless otherwise specified)

Characteristic Symbol Min Typ Max Unit

Input Threshold (Pin 4, Vin Increasing) VTH 4.630 4.725 4.820 V

Input Threshold Hysteresis (Pin 4, Vin Decreasing) VHYS 0.135 0.225 0.315 V

Supply Current (Pin 4)

(Vin = 4.34 V)

(Vin = 6.5 V)

Iin −

−−

−3.0

3.9

Minimum Operating Voltage (Pin 4) (Note 3)

(TA= 25°C)

(TA= −40°C to 85°C)

Vin(min) −

−0.55

0.65 0.70

0.80

Output Voltage High (Vin = 8.0 V; ISource = 1.0 mA)

Output Voltage High (Vin = 8.0 V; ISource = 0.25 mA)

Output Voltage High (Vin = 8.0 V; ISource = 0 mA)

Voh Vin−1.0

Vin−0.25

Vin−0.1

− − V

Output Voltage Low

(Input < 4.5 V; ISink = 0 mA; CNTRL = 0 V) Vol − − 0.1 V

Propagation Delay Input to Output ms

Complementary Output NCP304 Series

Output Transition, High to Low

Output Transition, Low to High tpHL

tpLH −

−10

21 −

3. Guaranteed by design.

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P−CHANNEL MOSFET (TA= 25°C, unless otherwise specified)

Parameter Symbol Min Typ Max Units

Drain to Source On Resistance

VGS = −4.5 V, ID = 600 mA

VGS = −4.5 V, ID = 1.0 A

RDS(on) 75

75 100

100

Zero Gate Voltage Drain Current

VGS = −4.5 V, VGS = 0 V, VDS = −10 V IDSS −1.0 mA

Turn On Delay (Note 4)

VGS = −4.5 V ton 5.5 ns

Turn Off Delay (Note 4)

VGS = −4.5 V toff 20 ns

Input Capacitance

VGS = 0 V, f = 1.0 MHz, VDS = −10 V Cin 531 pF

Gate to Source Leakage Current

VGS = 8.0 V, VDS = 0 V IGSS

±10 nA

Drain to Source Breakdown Voltage

VGS = 0 V, ID = −250 mAV(BR)DSS −12 V

Gate Threshold Voltage

VGS = VDS, ID = −250 mAV(GS)th −0.4 −0.7 −1.0 V

4. Switching characteristics are independent of operating junction temperature.

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PACKAGE DIMENSIONS

WDFN6, 2x2

CASE 506AN−01

ISSUE B

ÍÍÍ

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. DIMENSION b APPLIES TO PLATED

TERMINAL AND IS MEASURED BETWEEN

0.15 AND 0.20mm FROM TERMINAL.

4. COPLANARITY APPLIES TO THE EXPOSED

PAD AS WELL AS THE TERMINALS.

SEATING

PLANE

0.10 C

2X 0.10 C

DIM

MIN MAX

MILLIMETERS

0.70 0.80

A1 0.00 0.05

A3 0.20 REF

b0.25 0.35

D2.00 BSC

D2 0.57 0.77

0.90 1.10

E2.00 BSC

0.25 REF

e0.65 BSC

0.20 0.30

0.15 REF

PIN ONE

REFERENCE

0.08 C

0.10 C

A0.10 C

NOTE 3

66X

0.05 C

J6X

BOTTOM VIEW

MOUNTING FOOTPRINT

2.30 6X

PITCH

SOLDERMASK DEFINED

0.250.25

0.72

0.35

0.65

1.05

0.43

DIMENSIONS: MILLIMETERS

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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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NUS1204MN/D

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