Document Number: 83671 www.vishay.com
Revision 17-August-01
2–236
SFH615A
5.3 kV
TRIOS
Optocoupler
High Reliability
FEATURES
• Variety of Current Transfer Ratios at
I
F
=10 mA
– SFH615A-1, 40–80%
– SFH615A-2, 63–125%
– SFH615A-3, 100–200%
– SFH615A-4, 160–320%
• Low CTR Degradation
• Good CTR Linearity Depending on Forward
Current
•
Withstand Test Voltage, 5300 V
RMS
•
High Collector-Emitter Voltage,
V
CEO
=70 V
• Low Saturation Voltage
• Fast Switching Times
• Field-Effect Stable by TRIOS
(TRansparent IOn Shield)
• Temperature Stable
• Low Coupling Capacitance
• End-Stackable, .100" (2.54 mm) Spacing
• High Common-Mode Interference Immunity
(Unconnected Base)
• Underwriters Lab File #52744
• VDE 0884 Available with Option 1
DESCRIPTION
The SFH615A features a large variety of transfer ratio,
low coupling capacitance and high isolation voltage.
These couplers have a GaAs infrared emitting diode
emitter, which is optically coupled to a silicon planar
phototransistor detector, and is incorporated in a plas-
tic DIP-4 package.
The coupling devices are designed for signal transmis-
sion between two electrically separated circuits.
The couplers are end-stackable with 2.54 mm lead
spacing.
Creepage and clearance distances of >8.0 mm are
achieved with option 6. This version complies with IEC
950 (DIN VDE 0805) for reinforced insulation up to an
operation voltage of 400 V
RMS
or DC.
Specifications subject to change.
V
DE
Maximum Ratings
Emitter
Reverse Voltage ...............................................................................6.0 V
DC Forward Current ...................................................................... 60 mA
Surge Forward Current (t
P
≤
10
µ
s) ....................................................2.5 A
Total Power Dissipation .............................................................. 100 mW
Detector
Collector-Emitter Voltage...................................................................70 V
Emitter-Collector Voltage..................................................................7.0 V
Collector Current ........................................................................... 50 mA
Collector Current (t
P
≤
1.0 ms) ...................................................... 100 mA
Total Power Dissipation .............................................................. 150 mW
Package
Isolation Test Voltage between Emitter and
Detector, refer to Climate DIN 40046,
part 2, Nov. 74, t=1.0 s ....................................................... 5300 V
RMS
Creepage ....................................................................................
≥
7.0 mm
Clearance....................................................................................
≥
7.0 mm
Insulation Thickness between Emitter and Detector .................
≥
0.4 mm
Comparative Tracking Index
per DIN IEC 112/VDE0 303, part 1................................................
≥
175
Isolation Resistance
V
IO
=500 V,
T
A
=25
°
C ................................................................
≥
10
12
Ω
V
IO
=500 V,
T
A
=100
°
C ..............................................................
≥
10
11
Ω
Storage Temperature Range..............................................–55 to +150
°
C
Ambient Temperature Range ............................................–55 to +100
°
C
Junction Temperature..................................................................... 100
°
C
Soldering Temperature (max. 10 s. Dip Soldering
Distance to Seating Plane
≥
1.5 mm) .......................................... 260
°
C
.255 (6.48)
.268 (6.81)
1
2
4
3
.179 (4.55)
.190 (4.83)
pin one ID
.030 (.76)
.045 (1.14)
4°
typ.
0.100 (2.54)
.130 (3.30)
.150 (3.81)
.020 (.508 )
.035 (.89)
10°
3°–9°
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.031 (.79) typ.
.050 (1.27) typ.
.300 (7.62) typ.
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
.050 (1.27)
Dimensions in inches (mm)
1
2
4
3
Anode Collector
Cathode Emitter