2N6547
Silicon NPN Transistor
High Voltage, High Speed Switch
TO−3 Type Package
Description:
The 2N6547 is a silicon NPN transistor in a TO−3 type package designed for high voltage, high−speed
power switching in inductive circuits where fall time is critical. This device is particularly suited for
115V and 220V line−operated switch−mode applications.
Applications:
DSwitching Regulators
DPWM Inverters and Motor Controls
DDeflection Circuits
DSolenoid and Relay Drivers
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO(sus) 400V.................................................
Collector−Emitter Voltage, VCEX(sus) 450V.................................................
Collector−Emitter Voltage, VCEV 850V.....................................................
Emitter−Base Voltage, VEB 9V...........................................................
Collector Current, IC
Continuous 15A..................................................................
Peak (Note 1) 30A................................................................
Base Current, IB
Continuous 10A..................................................................
Peak (Note 1) 20A................................................................
Total Device Dissipation (TC = +25C), PD175W...........................................
Derate Above 25C 1.0W/C.......................................................
Total Device Dissipation (TC = +100C), PD100W..........................................
Operating Junction Temperature Range, TJ−65 to +200C..................................
Storage Temperature Range, Tstg −65 to +200C..........................................
Thermal Resistance, Junction−to−Case, RthJC 1.0C/W.....................................
Maximum Lead temperature (During Soldering, 1/8” from case, 5sec), TL+275C...............
Note 1. Pulse test: Pulse Width = 5ms, Duty Cycle 10%.
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics (Note 2)
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 100mA, IB = 0 400 − − V
VCEX(sus) IC = 8A, Vclamp = 450V, TC = +100C 450 − − V
IC = 15A, Vclamp = 300V, TC = +100C 300 − − V
Collector Cutoff Current ICEV VCEV = 850V, VBE(off) = 1.5V − − 1.0 mA
VCEV = 850V, VBE(off) = 1.5V,
TC = +100C
− − 4.0 mA
ICER VCE = 850V, RBE = 50, TC = +100C− − 5.0 mA
Emitter Cutoff Current IEBO VEB = 9V, IC = 0 − − 1.0 mA
Second Breakdown
Second Breakdown Collector
Current with Base Forward Bias
IS/b VCE = 100V, t = 1.0s (non−repetitive) 0.2 − − A
ON Characteristics (Note 2)
DC Current Gain hFE VCE = 2V, IC = 5A 12 −60
VCE = 2V, IC = 10A 6−30
Collector−Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 2A − − 1.5 V
IC = 10A, IB = 2A, TC = +100C− − 2.5 V
IC = 15A, IB = 3A − − 5.0 V
Base−Emitter Saturation Voltage VBE(sat) IC = 10A, IB = 2A − − 1.6 V
IC = 10A, IB = 2A, TC = +100C− − 1.6 V
Dynamic Characteristics
Current Gain−Bandwidth Product fTVCE = 10V, IC = 500mA, f = 1MHz 6−28 MHz
Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz 125 −500 pF
Switching Characteristics (Resistive Load)
Delay Time tdVCC = 250V, IC = 10A, IB1 = IB2 =2A,
tp = 300s, Duty Cycle 2%
− − 0.05 s
Rise Time tr− − 1.0 s
Storage Time ts− − 4.0 s
Fall Time tf− − 0.7 s
Switching Characteristics (Inductive Load, Clamped)
Storage Time tsv IC = 10A peak, Vclamp = 450V, IB1 = 2A,
VBE(off) = 5V
−2.0 −s
Fall Time tfi 0.09 − − s
Storage Time tsv IC = 10A peak, Vclamp = 450V, IB1 = 2A,
VBE(off) = 5V, TJ = +100C
− − 5.0 s
Fall Time tfi − − 1.5 s
Note 2. Pulse test: Pulse Width = 300s, Duty Cycle 2%.
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max