2MBI150U2A-060 IGBT Module U-Series 600V / 150A 2 in one-package 2. Equivalent circuit Equivalent Circuit Schematic Features Applications * High speed switching * Voltage drive * Low inductance module structure * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2 Conditions Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso Continuous 1ms 1 device AC:1min. Rating 600 20 150 300 150 300 500 +150 -40 to +125 2500 3.5 3.5 Unit V V A W C VAC N*m *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5N*m(M5 or M5), Terminal 2.5 to 3.5 N*m(M5) Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip*3 Symbols Conditions ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead VGE=0V, VCE=600V VCE=0V, VGE=20V VCE=20V, IC=150mA VGE=15V, IC=150A Tj=25C Tj=125C Tj=25C Tj=125C VCE=10V, VGE=0V, f=1MHz VCC =300V IC=150A VGE=15V RG= 24 VGE=0V IF=150A Tj=25C Tj=125C Tj=25C Tj=125C IF=150A Characteristics Min. Typ. - - - - 6.2 6.7 - 2.05 - 2.30 - 1.80 - 2.05 - 12 - 0.40 - 0.22 - 0.16 - 0.48 - 0.07 - 1.80 - 1.85 - 1.60 - 1.65 - - - 1.39 Max. 1.0 200 7.7 2.35 - - - - 1.20 0.60 - 1.20 0.45 2.20 - - - 0.35 - Unit Characteristics Min. Typ. - - - - - 0.05 Max. 0.25 0.46 - mA nA V V nF s V s m *3:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. http://store.iiic.cc/ Unit C/W C/W C/W IGBT Module 2MBI150U2A-060 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25C / chip Collector current vs. Collector-Emitter voltage (typ.) Tj= 125C / chip 400 400 VGE=20V Collector current : Ic [A] Collector current : Ic [A] VGE=20V15V 300 12V 10V 200 15V 300 12V 10V 200 100 100 8V 8V 0 0 0 1 2 3 4 0 5 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25C / chip 400 10 Collector - Emitter voltage : VCE [ V ] Collector current : Ic [A] 1 300 Tj=25C 200 Tj=125C 100 0 8 6 4 Ic=300A Ic=150A Ic= 75A 2 0 0 1 2 3 4 5 5 10 15 20 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) Vcc=300V, Ic=150A, Tj= 25C 25 Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Capacitance : Cies, Coes, Cres [ nF ] 100.0 Cies 10.0 Cres 1.0 Coes VGE VCE 0.1 0 10 20 30 0 200 400 600 Gate charge : Qg [ nC ] Collector-Emitter voltage : VCE [V] http://store.iiic.cc/ 800 IGBT Module 2MBI150U2A-060 Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=24, Tj= 25C Vcc=300V, VGE=15V, Rg=24, Tj=125C 10000 1000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 toff ton tr 100 tf ton 1000 toff tr 100 tf 10 10 0 100 200 0 300 Collector current : Ic [ A ] 100 200 300 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=150A, VGE=15V, Tj= 25C Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=24 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 10000 1000 ton tr toff 100 tf Eoff(125C) Eon(125C) 12 Eoff(25C) 8 Eon(25C) 4 Err(125C) Err(25C) 10 0 1.0 10.0 100.0 0 200 300 Reverse bias safe operating area (max.) +VGE=15V,-VGE <= 15V, RG >= 24 ,Tj <= 125C 20 400 15 300 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=150A, VGE=15V, Tj= 125C 10 Eoff 5 100 Collector current : Ic [ A ] Gate resistance : Rg [ ] Eon 200 100 Err 0 0 1.0 10.0 100.0 0 Gate resistance : Rg [ ] 200 400 600 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 800 IGBT Module 2MBI150U2A-060 Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.) chip Vcc=300V, VGE=15V, Rg=24 1000 Reverse recovery current : Irr [ A ] Reverse recovery time : trr [ nsec ] Forward current : IF [ A ] 400 300 T j=25 C T j=125C 200 100 trr (125C) trr (25C) 100 Irr (125C) Irr (25C) 10 0 0 1 2 3 Forward on voltage : VF [ V ] 1.000 Thermal resistanse : Rth(j-c) [ C /W ] FWD IGBT 0.100 0.010 0.010 0.100 100 200 Forward current : IF [ A ] Transient thermal resistance (max.) 0.001 0.001 0 1.000 Pulse width : Pw [ sec ] Outline Drawings, mm M232 http://store.iiic.cc/ 300