KST-9008-000 1
PN2222A
NPN Silicon Transistor
14.0±0.40
Descriptions
• General purpose application
• Switching application
Features
• Low Leakage current
• Low collector saturation v oltage enabling low voltage operation
• Complementary pair with PN2907A
Ordering Information
Type NO. Marking Package Code
PN2222A PN2222A TO-92
Outline Dimensions unit :
mm
4.5±0.1
4.5±0.1
0.4±0.02
1.27 Typ.
1 2 3
3.45±0.1
2.25±0.1
2.06±0.1
1.20±0.1
0.38
PIN Conne cti ons
1. Emitter
2. Bas e
3. Collector
14.0±0.40
2.54 Typ.
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
KST-9008-000 2
PN2222A
Absolute maximum ratings Ta=25°
°°
°C
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO 75 V
Collector-Emitter voltage VCEO 40 V
Emitter-base voltage VEBO 5V
Collector current IC600 mA
Collector dissipation PC625 mW
Junction temperature Tj150 °C
Storage temperature range Tstg -55~150 °C
Electrical Characteristics Ta=25°
°°
°C
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collec tor-Base breakdown voltage BVCBO IC=10µA, IE=0 75 - - V
Collector - Emitter breakdown voltage BVCEO IC=10mA, IB=0 40 - - V
Emitter-Base break d own v olta ge BVEBO IE=10µA, IC=0 5 - - V
Collector cut-off current ICBO VCB=75V, IE=0 - - 20 nA
DC current gain hFE VCE=10V, IC=10mA 100 - - -
Collec tor -Emitter s a turation voltage VCE(sat) IC=150mA, IB=15mA - - 0.4 V
Transition frequency fTVCE=20V, IC=20mA,
f=100MHz 250 - - MHz
Collec tor output capac itance Cob VCB=10V, IE=0, f=1MHz - - 8 pF
Delay time td--10ns
Rise time tr
VCC=30Vdc, VBE(off)=0.5Vdc,
IC=150mAdc, IB1=15mAdc --25ns
Storage time ts- - 225 ns
Fall Time tf
VCC=30Vdc,IC=150mAdc,
IB1=IB2=15mAdc --60ns
KST-9008-000 3
PN2222A
Electrical Characteristic Curves
Fig. 2 hFE-IC
Fig. 1 PC-Ta
Fig. 4 Cob-VCB
Fig. 3 VCE(sat)-IC
