Publication Date : Apr., 2011 1
< C band internally matched power GaAs FET >
MGFC40V5964
5.9 – 6.4 GHz BAND / 10W
DESCRIPTION
The MGFC40V596 4 is an internally impedance-matched
GaAs power FET especially designed for use in 5.9 – 6.4
GHz band amplifiers. The hermetically s ealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB=10W (TYP.) @f=5.9 – 6.4GHz
High power gain
GLP=10dB (TYP.) @f=5.9 – 6.4GHz
High power added efficiency
P.A.E.=30% (TYP.) @f=5.9 – 6.4GHz
Low distortion [item -51]
IM3=-49dBc (TYP.) @Po=29dBm S.C.L
APPLICATION
item 01 : 5.9 – 6.4 GHz band power amplifier
item 51 : 5.9 – 6.4 GHz band digital radio communication
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
VDS=10V ID=2.4A RG=50ohm Refer to Bias Procedure
Absolute maximum ratings (Ta=25C)
Symbol Parameter Ratings Unit
VGDO Gate to drain breakdown voltage -15 V
VGSO Gate to source breakdown voltage -15 V
ID Drain current 7.5 A
IGR Reverse gate current -20 mA
IGF Forward gate current 42 mA
PT *1 Total power dissipation 42.8 W
Tch Cannel temperature 175 C
Tstg Storage temperature -65 to +175 C
*1 : Tc=25C
Electrical characteristics (Ta=25C)
Symbol Parameter Test conditions Limits Unit
Min. Typ. Max.
IDSS Saturated drain current VDS=3V,VGS=0V - 4.5 6 A
gm Transconductance VDS=3V,ID=2.2A - 2 - S
VGS(off) Gate to source cut-off voltage VDS=3V,ID=40mA -2 -3 -4 V
P1dB Output power at 1dB gain compression 39.5 40.5 - dBm
GLP Linear Power Gain 8 10 - dB
ID Drain current - 2.4 - A
P.A.E. Power added efficiency - 30 - %
IM3 *2 3rd order IM distortion
VDS=10V,ID(RF off)=2.4A
f=5.9 – 6.4GHz
-42 -49 - dBc
Rth(ch-c) *3 Thermal resistance delta Vf method - 3 3.5 C/W
*2 :item -51 ,2 tone test,Po=29dBm Single Carrier Level ,f=6.4GHz,delta f=10MHz
*3 :Channel-case
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Rememb er to give
due consideration to safet y when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) pre v ention
against any malfunction or mishap.
OUTLINE DRAWING Unit: millimeters (inches)
(1): GATE
(
2
)
: SOURCE
(
FLANGE
)
GF-18 (3): DRAIN
4.0+/-0.4
1.4
2MIN
2.4+/-0.2
0.1
17.4+/-0.3
R1.25
2MIN
0.6+/-0.15
(1)
24+/-0.3
20.4+/-0.2
13.4
(3)
8.0+/-0.2
R1.2
15.8
(2)
< C band internally matched power GaAs FET >
MGFC40V5964
5.9 – 6.4 GHz BAND / 10W
Publication Date : Apr., 2011
2
© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
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