_| Ordering number: EN 1411 Applications - No.1411C _2SA1352/28C3416 PNP/NPN Epitaxial Planar Silicon Transistors High-Definition CRT Display Video Output Applications - Color TV chroma output, high-voltage driver applications Features - High breakdown voltage : Vergo 2 200V. - Small reverse transfer capacitance and excellent high-frequency characteristics : Cre=1.2pF(NPN),1.7pF(PNP) - Adoption of FBET process. 4 Mm 7997076 0020221 343 3 3.0% JEDEC: TO-126 SANYO Electric Co.,Ltd. Semiconductor Business Headquarters TOKYO OFFICE Tokyo Bldg.,1-10,1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN 10996TS (KOTO) X-6218/3237KI/3125K1/1114KI, MT No.1411-1/4 ba w 1: Emitter 2: Collector 3: Base ( ):25A1352 ; Absolute Maximum Ratings at Ta =25C unit Collector-to-Base Voltage Voso ()200 Vv Collector-to-Emitter Voltage VcEo ()200 Vv Emitter-to-Base Voltage VERO ()5 Vv Collector Current Ie ()100 mA Collector Current (Pulse) Icp ()200 mA Collector Dissipation Po 12 W Te=25C 5 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta= 25C min typ max unit Collector Cutoff Current Icpo Vop=()150V, Ip=0 (-)0.1 vA Emitter Cutoff Current Ippo Vep=()4V, Ic=0 (-)0.1 pA DC Current Gain hrg Vor =()40V, Ic=()10mA 40 320 Gain Bandwidth Product fp Veg =()30V, Ic =()10mA 70 MHz C-E Saturation Voltage Vertat) Ic=()20mA, Ip=()2mA -)0.6 V B-E Saturation Voltage Vexsat) Ic=()20mA, Ip=()2mA (-)1.0 V C-B Breakdown Voltage Viprycpo Ic=()10uA, Ip=0 ()200 _ Vv C-E Breakdown Voltage Vprycro I=()1mA, Rgp=% ()200 Vv E-B Breakdown Voltage VipRyEBO Ip=()10pA, Ic =0 ()5 Vv Output Capacitance Cob Vop=()30V, f=1MHz 1.7 pF (2.6) pF Reverse Transfer Capacitance Cre Vep=()30V, f=1MHz 1.2 pF (1.7) pF %: The 25A1352/2SC3416 are classified by 10mA hpg as follows : 40 C 80 60 D 120 100 E 200 | 160 F 320 Package Dimensions 2009B (unit: mm) er 227 HALL2S8A1352/28C3416 Collector Current,I, mA Collector Current,Ip mA 1 Ip=0 Ip=0 . -100 10 30 400 DCUMC w =20 -30 -4 -50 -60 -70 -80 -90 Collector-to-Emitter Voltage,Vcx V .. Collector-to-Emitter Voltage,Vcx V Ic Vee - Vv 6 1 : < E t t ! Y m4 a a 5 zg 6 5 8 x 3 8 =0 =0 =1 -3 -4 ~5 -6 -7 ~-8 -9 -10 : f{ 2 3 4 S$ 6 7 @ $ WwW Collector-to-Emitter Voltage,Voz V Collector-to-Emitter Voltage,Voz V hre Ie hee Ie 352 Vcr=10V 28C3416 Von=10V DC Current Gain hrg 8 DC Current Gain,hyp 3 Tr) 100 10 Collector Current,Ig ~ mA Collector Current,Ip mA fr - oO fr - Ic Vor=30V Vep=30V 8 Gain-Bandwidth Product,f MHz 3 Gain-Bandwidth Product,fp MHz =100 , , 10 Collector Current,Ig mA: -~ Collector Current,Ig mA 228 me 799707b COedece cotCollector-to-Emitter Base-to-Emitter 25A1352/28C3416 Cob Vv Cob - V 2SA1352 28C3416 f= f= a 3 6 Output Capacitance,Cob pF Output Capacitance,Cob pF 71.0 -10 -100 Collector-ta-Base Voltage, Vcop V Collector-to-Base Voltage,Vog V Cre Veg Cre Veg 28A1352 f= 28C3416 f=1MHz 3 Reverse Transfer Capacitance,Cre pF 5 Reverse Transfer Capacitance,Cre pF 34.0 to Collector-to-Base Voltage,Vcg V / Collector-to-Base Voltage,Vcg V Vcesat) Ic Vcetsat) Ic -10 10 -v ah 0 Saturation Voltage, Vcrwap Saturation Voltage, Versa) V Collector-to-Emitter t 2 Qo] -10 -0 = 10 1.0 10 100 Collector Current,Ip mA Collector Current,Ip mA Ve Ie Vv Ie 16 Ioflg=10 -vV iL s Saturation Voltage, Vgmeay V Saturation Voltage, Vgpisaty . Base-to-Emitter -10 -10 10 Collector Current,I mA Collector Current,Ip mA Mm 799707 0020223 1b mm 22925A1352/25C3416 Ic VBE ASO "99 (SSA 1952/25C3416 . lop Vcr=10V 100|(For PNP, minus sign is omitted:) < & ! t @ | 2 ee oO g 9 tu o * in u E EEOP 5 8] a] 8 2 8 ! 3 3 a ! s 10 3 | 3S 2 (For , minus is 0 02 O4 0.6 08 10 LG Base-to-Emitter Voltage,Vpp V Collector-to-Emitter Voltage,Vcg V 1 Po Ta Poe Te 28A1352/28C3416 8 28A1352/28C3416 zt NX = 5 i L 1. N\ o 1.0 N\ By NX m4 oot Ny 3 0.8) NY 2 N & Sax BF N = 0.6 Ne B A N a S N 8 2 S 04 oO 2 N 2 3 . ss oS N. 2 02 NX - Oo 1 7 ; NX % 20 40 60 80 10 120 140 86160 Ms) 20 4 60 8 100 720 140 = 160 Ambient Temperature, Ta C Case Temperature,Te C 2300 2 mm 7997076 OO20224 O52 mm