BFS17/BFS17R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFS17 Marking: E1 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter 2 BFS17R Marking: E4 Plastic case (SOT 23) 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings Parameters Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Tamb 60C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 25 15 2.5 25 200 150 -55 to +150 Unit V V V mA mW C C Symbol Value Unit RthJA 450 K/W Maximum Thermal Resistance Parameters Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 mm Cu TELEFUNKEN Semiconductors Rev. A3, 16-Oct-97 1 (7) BFS17/BFS17R Electrical DC Characteristics Tamb = 25C Parameters / Test Conditions Collector-emitter cut-off current VCE = 25 V, VBE = 0 Collector-base cut-off current VCB = 10 V, IE = 0 Emitter-base cut-off current VEB = 2.5 V, IC = 0 Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector saturation voltage VCE = 1 V, IC = 20 mA DC forward current transfer ratio VCE = 1 V, IC = 2 mA VCE = 1 V, IC = 25 mA Symbol Max. Unit ICES 100 mA ICBO 100 nA IEBO 10 mA V(BR)CEO Min. Typ. 15 V VCEsat 750 mV hFE hFE 20 20 100 150 Symbol Min. Typ. Max. fT fT fT 1 1.5 2.4 2.1 GHz GHz GHz Cce 0.2 pF Ccb 0.45 pF Ceb 0.8 pF F 3.5 Gpe Gpe 23 11 dB dB V1 = V2 100 mV IP3 23 dBm Electrical AC Characteristics Tamb = 25C Parameters / Test Conditions Transition frequency VCE = 5 V, IC = 2 mA, f = 300 MHz VCE = 5 V, IC = 14 mA, f = 300 MHz VCE = 5 V, IC = 25 mA, f = 300 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Collector-base capacitance VCB = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure VCE = 5 V, IC = 2 mA, ZS = 50 W, f = 800 MHz Power gain VCE = 5 V, IC = 14 mA, ZS = 50 W, f = 200 MHz f = 800 MHz Linear output voltage - two tone intermodulation VCE = 5 V, IC = 14 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 W Third order intercept point VCE = 5 V, IC = 14 mA, f = 800 MHz 2 (7) 1.3 5 Unit dB TELEFUNKEN Semiconductors Rev. A3, 16-Oct-97 BFS17/BFS17R Common Emitter S-Parameters Z0 = 50 W S11 VCE/V IC/mA 2 5 5 10 15 20 f/MHz LIN MAG 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 100 300 500 800 1000 1200 1500 1800 2000 TELEFUNKEN Semiconductors Rev. A3, 16-Oct-97 0.89 0.67 0.52 0.42 0.40 0.40 0.41 0.43 0.44 0.75 0.48 0.39 0.36 0.35 0.37 0.40 0.42 0.43 0.58 0.39 0.36 0.36 0.36 0.38 0.41 0.44 0.46 0.49 0.37 0.36 0.37 0.38 0.40 0.44 0.46 0.48 0.44 0.36 0.38 0.39 0.40 0.42 0.46 0.49 0.49 S21 ANG deg -30.1 -77.7 -110.1 -141.1 -155.6 -167.6 176.3 162.8 153.6 -49.0 -106.9 -137.3 -162.5 -173.1 178.1 165.0 153.7 146.0 -70.1 -129.4 -154.4 -174.1 176.8 169.3 159.0 148.4 140.9 -84.8 -140.9 -162.3 -179.6 173.1 166.1 155.8 145.8 137.7 -96.6 -148.7 -167.0 177.5 169.8 163.8 153.8 143.7 136.1 LIN MAG 5.92 4.35 3.12 2.13 1.77 1.51 1.27 1.09 0.98 11.55 6.36 4.09 2.65 2.16 1.84 1.51 1.28 1.16 16.31 7.28 4.52 2.88 2.33 1.97 1.61 1.36 1.23 18.25 7.49 4.59 2.91 2.34 1.98 1.61 1.36 1.23 19.07 7.46 4.55 2.87 2.31 1.95 1.58 1.34 1.21 S12 ANG deg 155.7 121.5 100.8 82.4 73.5 66.1 56.0 48.6 45.8 142.9 106.6 90.5 76.0 68.6 62.2 53.2 46.4 44.2 130.8 98.3 85.2 72.6 65.9 59.8 51.7 45.4 43.0 124.3 94.8 82.8 71.0 64.5 58.8 50.7 44.6 42.4 120.0 92.6 81.4 69.9 63.5 57.9 50.1 43.9 41.9 LIN MAG 0.03 0.06 0.08 0.09 0.10 0.11 0.13 0.15 0.18 0.02 0.05 0.06 0.08 0.10 0.11 0.14 0.16 0.19 0.02 0.04 0.05 0.08 0.10 0.11 0.14 0.17 0.20 0.01 0.03 0.05 0.08 0.09 0.11 0.14 0.17 0.20 0.01 0.03 0.05 0.07 0.09 0.11 0.13 0.17 0.20 S22 ANG deg 73.7 53.5 47.4 48.7 51.3 54.3 59.6 65.5 71.6 66.8 55.0 56.9 61.2 63.2 65.2 68.1 71.8 76.1 62.7 61.2 64.9 67.6 68.7 70.2 72.7 75.6 79.6 62.8 65.1 68.3 70.4 71.4 72.8 75.2 78.2 81.9 62.0 67.9 70.5 72.3 73.3 74.9 77.5 80.4 83.7 LIN MAG 0.95 0.80 0.71 0.67 0.67 0.67 0.66 0.66 0.68 0.88 0.67 0.61 0.60 0.61 0.61 0.61 0.61 0.64 0.79 0.59 0.56 0.57 0.58 0.59 0.59 0.60 0.62 0.73 0.57 0.55 0.56 0.58 0.58 0.59 0.60 0.62 0.70 0.57 0.55 0.57 0.58 0.59 0.59 0.60 0.62 ANG deg -9.2 -18.5 -20.3 -21.6 -23.9 -27.1 -32.4 -37.3 -41.0 -14.3 -18.9 -17.4 -17.6 -20.1 -23.4 -28.9 -33.7 -37.5 -17.5 -16.5 -14.2 -14.8 -17.5 -21.3 -26.7 -31.8 -35.7 -18.0 -14.7 -12.7 -13.5 -16.5 -20.4 -26.2 -31.4 -35.2 -17.6 -13.3 -11.6 -13.2 -16.3 -20.3 -26.2 -31.4 -35.4 3 (7) BFS17/BFS17R Typical Characteristics (Tj = 25_C unless otherwise specified) C cb - Collector Base Capacitance ( pF ) P tot - Total Power Dissipation ( mW ) 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Tamb - Ambient Temperature ( C ) 96 12159 0.8 0.6 0.4 0.2 f=1MHz 0 0 13604 Figure 1.. Total Power Dissipation vs. Ambient Temperature 1.0 4 8 12 16 20 VCB - Collector Base Voltage ( V ) Figure 3.. Collector Base Capacitance vs. Collector Base Voltage f T - Transition Frequency ( MHz ) 3000 2500 2000 1500 1000 VCE=5V f=300MHz 500 0 0 13603 5 10 15 20 25 30 IC - Collector Current ( mA ) Figure 2.. Transition Frequency vs. Collector Current 4 (7) TELEFUNKEN Semiconductors Rev. A3, 16-Oct-97 BFS17/BFS17R VCE = 5 V; IC = 10 mA; Z0 = 50 W S12 S11 j 90 2.0 GHz 120 j0.5 60 j2 1.5 150 j0.2 2.0 GHz AAA AAAAAA AAA AAAAAA 0.2 1.0 0 1 2 30 1.0 j5 0.5 1 5 0.1 180 0.08 0.16 0 0.5 0.3 -j0.2 -j5 -150 0.1 -j0.5 -30 -j2 -120 -j 13 546 -60 -90 13 547 Figure 4. Input reflection coefficient Figure 6. Reverse transmission coefficient S21 S22 j 90 120 60 j0.5 j2 0.1 150 30 j0.2 0.3 0.5 180 2.0 GHz 8 16 0 0 j5 AAAAAAAAAA AAAAAAAAAA 0.2 0.5 1 -j0.2 -150 0.5 1 5 0.1 -j5 2.0 GHz -30 -j0.5 -120 13548 2 -j2 -60 -90 Figure 5. Forward transmission coefficient TELEFUNKEN Semiconductors Rev. A3, 16-Oct-97 13 549 -j Figure 7. Output reflection coefficient 5 (7) BFS17/BFS17R Dimensions of BFS17 in mm 95 11346 Dimensions of BFS17R in mm 95 11347 6 (7) TELEFUNKEN Semiconductors Rev. A3, 16-Oct-97 BFS17/BFS17R Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 TELEFUNKEN Semiconductors Rev. A3, 16-Oct-97 7 (7)