Features
nFloating channel designed for bootstrap operation
Fully operational to +400V
Tolerant to negative transient voltage
dV/dt immune
nGate drive supply range from 10 to 20V
nUndervoltage lockout for both channels
nSeparate logic supply range from 5 to 20V
Logic and power ground ±5V offset
nCMOS Schmitt-triggered inputs with pull-down
nCycle by cycle edge-triggered shutdown logic
nMatched propagation delay for both channels
nOutputs in phase with inputs
IR2110L4
HIGH AND LOW SIDE DRIVER
Product Summary
VOFFSET 400V max.
IO+/- 2A / 2A
VOUT 10 - 20V
ton/off (typ.) 120ns & 94ns
Delay Matching 10ns
mounted and still air conditions.
Symbol Parameter Min. Max. Units
VBHigh Side Floating Supply Voltage -0.5 VS + 20
VSHigh Side Floating Supply Offset Voltage 400
VHO High Side Floating Output Voltage VS - 0.5 VB + 0.5
VCC Low Side Fixed Supply Voltage -0.5 20
VLO Low Side Output Voltage -0.5 VCC + 0.5 V
VDD Logic Supply Voltage -0.5 VSS + 20
VSS Logic Supply Offset Voltage VCC - 20 VCC + 0.5
VIN Logic Input Voltage (HIN, LIN & SD) VSS - 0.5 VDD + 0.5
dVs/dt Allowable Offset Supply Voltage Transient (Figure 2) 50 V/ns
PDPackage Power Dissipation @ TA £ +25°C 1.6 W
RthJA Thermal Resistance, Junction to Ambient 75 °C/W
TJJunction Temperature -55 125
TSStorage Temperature -55 150 °C
TLLead Temperature (Soldering, 10 seconds) 300
Weight 1.5 (typical) g
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board
05/02/11
www.irf.com 1
Description
The IR2110L4 is a high voltage, high speed power MOSFET
and IGBT driver with independent high and low side
referenced output channels. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized monolithic
construction. Logic inputs are compatible with standard
CMOS or LSTTL outputs. The output drivers fetures a
high pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are matched
to simplify use in high frequency applications. The floating
channel can be used to drive an N-channel power MOSFET
or IGBT in the high side configuration which operates up
to 400 volts.
PD-60085B