MONCTON voviez:.<. _ PRODUCT CATALOG ; _ . ae N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS 500V, 40A, 0.142 PARAMETER SYMBOL UNITS Drain-source Volt.(1) VDSS - 500 Vdc SDF 40N50 JAM Drain-Gate Voltage VDGR 500 Vde (Res=1.0Mn) (1) Gate-Source Voltage VGS 20 Vde FEATURES Continuous Drain Current Continuous : (Te = 25C) ID 40 Adc @ RUGGED PACKAGE Drain Current Pulsed(3) DM 160 A j@ HI-REL CONSTRUCTION Total Power Dissipation PD 500 W @ CERAMIC EYELETS Sewer Discipation | |@ LEAD BENDING OPTIONS Derating > 25C 4.0 wec @ COPPER CORED 52 ALLOY PINS Operating & Storage Temp. | TJ/Tsig -SS TO +150 C @ LOW IR LOSSES - @ LOW THERMAL RESISTANCE Thermal Resistance Rthdc 0.25 C/W Max.Lead temperature TL 300. c @ OPTIONAL MIL-STD-883 SCREENING ELECTRICAL CHARACTERISTICS Tc=26C (Wie cpcoren ) SCHEMATIC PARAMETER SYMBOL} TEST CONDITIONS MINJTYP | MAX JUNITS Drain-source VGS=O0V j DO Breakdown Volt |Y(BR20Ss 1D=SO00 WA S00} - ~ Vv D Oo Gate Thresholdivec(ty)lvps=veS iD=500 MA |2.0| - [4.0] V voltage : Gate Source = Leakage IGSS |VGS=220 V - - {200} nA _- Zero Gate VDS=MAX.RATING VGS=0| - | - |SO0]| HA Q ? Voltage Drain | IDSS /yps=0.8 MAX.RATING Current v6s-0. Tusizsec. | ~ | ~ [2-0] mA 1 Static Drain- - _--) Source On-State|RDS(oN)| YES=10 V - | - jo.14} 2 4d Resistance(1) (ON) iD=24A 0.1 Forward Trans- VOS 2 SO V - - Q-----4 Conductance (2)| 9fS | ips=24a 13 s(U) S , Input Capacitance] CISS ~- 18200] pF so Output Capacitance| COSS VGS=OV VDS=25 V - |970] - pF Reverse Transfer f=1.0 MHz = To (CUSTOM SCHEMATIC OPTIONS AVAILABLE) Capacitance CRSS 170 pF Turn-On Delay |td(on)|/vpp=100V RG=2.20 -1|- [35 | ns STANDARD BEND CONFIGURATION J AM Rise Time tr (nosey tehing ti - | - [120] ns Turn-Off Delayltd(off)l are essentially indepen- - - |130] ns Fall Time if dent of operating temp.) [~|" [yog]| ns Total Gate Charge , (Gate-Source Plus} Qg - - (380; nc wee VOS-0.8 MAX RATING Gate-Source =O. : , Charge Qgs (Gate charge is essen! |- ~ ~ 54 | 0c . a n en n e Cmte) Qed operating temperature) _ - tigs} nc Charge en (UNLESS OTHER- SOURCE-DRAIN DIODE RATINGS & CHARACT. Tg= 26C (Wise cpsorED PARAMETER SYMBOL TEST CONDITIONS MIN.) TYP .|MAX .JUNITS Continuous te: Modified MOSFET Source Currenti IS . - | - | 40 A ; symbol showing the (Body Diode) integral reverse... Pulse Source P-N junction recti- Current (Body | ISM |fier (See schematic)! - | - {160} A Diode) (1) Diode Forward IF=40A, VGS=O0V {fe Voltage (2) VSD | t2+25C - 2.0} V Reverse = _ - Recovery Time | rr |Te=*25 C 1000| ns Reverse Re- IF=40A covery Charge | Orr jdi/dt=100A/ ws J - ]tS | 7 fue (CUSTOM BEND OPTIONS -AVAILABLE) 1) Td = 25C to 150C. REL. .3/93 5) Pulse test: Pulse Width <300nS, Duty Cycle < 2%. 3) Repetitive Rating: Pulse Width Iimited By Max. junction Temperature. A29 1