2N2920 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: * General purpose * Matched Dual transistors * NPN silicon transistor * Screening and processing per MIL-PRF-19500 Appendix E * JAN level (2N2920J) * JANTX level (2N2920JX) * JANTXV level (2N2920JV) * JANS level (2N2920JS) * QCI to the applicable level * 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS * Radiation testing (total dose) upon request Features * * * * Hermetically sealed TO-78 metal can Also available in chip configuration Chip geometry 0307 Reference document: MIL-PRF-19500/355 Benefits * Qualification Levels: JAN, JANTX, JANTXV and JANS * Radiation testing available Please contact Semicoa for special configurations www.SEMICOA.com or (714) 979-1900 Absolute Maximum Ratings Parameter Collector-Emitter Voltage TC = 25C unless otherwise specified Symbol VCEO Rating 60 Collector-Base Voltage VCBO 70 Unit Volts Volts Emitter-Base Voltage VEBO 5 Volts IC 50 300 one section 600 both sections 1.71one section 3.43 both sections 750 one section 1.5 both sections 4.286 one section 7.14 both sections mA Collector Current, Continuous Power Dissipation, TA = 25C PT Derate linearly above 25C Power Dissipation, TC = 25C PT Derate linearly above 25C Operating Junction Temperature Storage Temperature Copyright 2002 Rev. H TJ TSTG -65 to +200 mW mW/C MW W mW/C C Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 1 of 2 2N2920 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25C Off Characteristics Parameter Symbol Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current V(BR)CEO ICBO1 ICBO2 ICBO3 ICEO IEBO1 IEBO2 Test Conditions Min IC = 10 mA VCB = 70 Volts VCB = 45 Volts VCB = 45 Volts, TA = 150C VCE = 5 Volts VEB = 6 Volts VEB = 5 Volts On Characteristics Typ Max Units 10 2 2.5 2 10 2 Volts A nA A nA A nA 60 Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% Parameter Symbol Test Conditions IC = 10 A, VCE = 5 Volts IC = 100 A, VCE = 5 Volts IC = 1 mA, VCE = 5 Volts IC = 10 A, VCE = 5 Volts TA = -55C IC = 100 A, VCE = 5 Volts VCE = 5 Volts, IC = 10 A VCE = 5 Volts, IC = 100 A VCE = 5 Volts, IC = 1 mA VCE = 5 Volts, IC = 100 A TA = 25 C and -55C TA = 25 C and +125C IC = 1 mA, IB = 100 A hFE1 hFE2 hFE3 hFE4 DC Current Gain Base-Emitter Voltage differential Base-Emitter Voltage differential at temperature Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage hFE2-1/hFE2-2 |VBE1-VBE2|1 |VBE1-VBE2|2 |VBE1-VBE2|3 |VBE1-VBE2|1 |VBE1-VBE2|2 VBEsat1 Min Typ 175 235 300 50 600 800 1,000 0.9 1.0 5 3 5 0.5 IC = 1 mA, IB = 100 A VCEsat1 Max Units mVolts 0.8 1 1.0 mVolts 0.3 Volts Max Units Volts Dynamic Characteristics Parameter Magnitude - Common Emitter, Short Circuit Forward Current Transfer Ratio Small Signal Short Circuit Forward Current Transfer Ratio Symbol |hFE1| hFE Open Circuit Output Capacitance COBO Noise Figure NF1 NF2 NF3 hie hoe hre Short Circuit Input Impedance Open Circuit Output Admittance Open Circuit reverse Voltage Transfer Ratio Copyright 2002 Rev. H Test Conditions VCE = 5 Volts, IC = 500 A, f = 20 MHz VCE = 10 Volts, IC = 1 mA, f = 1 kHz VCB = 5 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz VCE = 5 Volts, IC = 10 A, Rg = 10 k f = 100 Hz f = 1 kHz f = 10 kHz VCB =5V, IC =1mA, f =1kHz VCB =5V, IC =1mA, f =1kHz Min Typ 3 20 150 600 3 VCB =5V, IC=100A, f=1kHz 5 pF 5 3 3 30 60 dB k mhos 1x10-3 Semicoa Semiconductors, Inc. 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 www.SEMICOA.com Page 2 of 2