©2001 Fairchild Semiconductor Corporation
FFPF60B150DS
Rev. A, March 2001
DAMPER + MODULATION DIODE
Absolute Maximum Ratings (Modulation) TC=25°
°°
°C unless otherwise noted
Absolute Maximum Ratings (Damper) TC=25°
°°
°C unless otherwise noted
Thermal Characteristics
Symbol Parameter Value Units
VRRM Peak Repetitive Reverse Voltage 600 V
IF(AV) Average Rectified Forward Current @ TC = 100°C20 A
IFSM Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave 120 A
TJ, TSTG O perating Junction and Storage Temperature - 65 to +150 °C
Symbol Parameter Value Units
VRRM Peak Repetitive Reverse Voltage 1500 V
IF(AV) Average Rectified Forward Current @ TC = 100°C6 A
IFSM Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave 60 A
TJ, TSTG O perating Junction and Storage Temperature - 65 to +150 °C
Symbol Parameter Value Units
RθJC Maximum Thermal Resistance, Junction to Case 3.3 °C/W
FFPF60B150DS
Features
• High voltage and high reliability
• High speed switching
Modulation diode / Damper diode
• Low conduction loss
Modulation diode / Damper diode
Applications
• (Modulation + Damper) diode designed for
horizontal deflection circuits in C-TVs &
monitors
Damper Modulation
TO-220F
1 2 3
©2001 Fairchild Semiconductor Corporation Rev. A, March 2001
FFPF60B150DS
Electrical Characteristics*(Modulation) TC=25 °
°°
°C unles s othe r wise not e d
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Electrical Characteristics*(Damper) TC=25 °
°°
°C unless otherwise noted
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
Symbol Parameter Min. Typ. Max. Units
VFM Maximum Instantaneous Forward V oltage
IF = 20A
IF = 20A TC = 25 °C
TC = 100 °C2.2
2.0
V
IRM Maximum Instantaneous Reverse Current
@ rated VR TC = 25 °C
TC = 100 °C10
100
µA
trr
Irr
Qrr
Maximum Reverse Recov e ry Time
Maximum Reverse Recov ery Current
Maximum Reverse Recov ery Charge
(IF =20A, di/dt = 200A/µs)
90
8
360
ns
A
nC
Symbol Parameter Min Typ Max Units
VFM Maximum Instantaneous Forward V oltage
IF = 6A
IF = 6A TC = 25 °C
TC = 100 °C1.6
1.4
V
IRM Maximum Instantaneous Reverse Current
@ rated VR TC = 25 °C
TC = 100 °C7
60
µA
trr Maximum Reverse Recov ery Time
(IF =1.0A, di/dt = 50A/µs) 170 ns
tfr Maximum Forward Recovery Time
(IF =6.5A, di/dt = 50A/µs) 350 ns
VFRM Maximum Forward Recovery Voltage 17 V
©2001 Fairchild Semiconductor Corporation Rev. A, March 2001
FFPF60B150DS
Typical Characteristics
Figure 1. Typical Forward Characteristics
(Modulation Diode)
Figure 3. Typica l Reverse Cu rr ent
vs. Reverse Voltage (M odulation Diode)
Figure 5. Typical Jun ction Capa cita nce
(Modulation Diode)
Figure 2. Typical Forw ard Charac ter istics
(Da mper Diode )
Figure 4. Typical Reverse Current
vs. Reverse Voltage (Damper Diode)
Figure 6. Typical Junctio n Capa citance
(Da mper Diode )
0.1
1
10
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0
TC = 25oC
TC = 100oC
Forward V oltage , V F [V ]
Forward Cu rrent , IF [A]
100 200 300 400 500 600
0.001
0.01
0.1
1
10
100
1000
TC = 100oC
TC = 25oC
R ev ers e C u rren t , I R [u A ]
Re verse Voltage , VR [V]
0.1 1 10 100
1
50
100
150
200 Typical Capacitance
at 0V = 178 pF
Capacitance , Cj [pF]
Reverse Voltage , VR [V ]
0.1
1
10
50
0.0 0.4 0.8 1.2 1.6 2.0
TJ = 25oC
TJ = 125oC
Forward Voltage , VF [V]
F orw a rd Cu rre nt , I F [A ]
0 300 600 900 1200 1500
0.001
0.01
0.1
1
10
100
TJ = 100oC
TJ = 125oC
TJ = 25oC
Reverse Current , I R [µA]
Reverse Voltage , VR [V ]
0.1 1 10 100
0
20
40
60
80
100
120 Typical Capacitance
at 0V = 100 pF
Capacitance , Cj [pF]
Reverse Voltage , VR [V]
©2001 Fairchild Semiconductor Corporation Rev. A, March 2001
FFPF60B150DS
Typical Characteristics
Figure 7. Typica l Reverse Recovery Tim e
vs. di/dt (Modulation Diode)
Figure 9. Typical Reverse Recovery Current
vs. di/dt (Modulation Diode)
Figure 11. Forward Current Derating Curve
(Modulation Diode)
Figur e 8. Typi cal Reverse R ecovery Time
vs. di/dt (Damper Diode)
Figure 10. Forward Current Derating Curve
(Da mper Diode )
100 500
40
50
60
70
80
90
100
IF = 20 A
TC = 25oC
Reverse Reco very Time , trr [n s]
di/dt [A /us]
100 500
0
2
4
6
8
10
12
14
16
IF = 20A
TC = 25oC
Reverse Recovery Current , Irr [A]
di/dt [A/us]
60 80 100 120 140 160
0
5
10
15
20
25
30
DC
Average Forward Current , I F(AV) [A ]
Case Temperature , TC [oC]
12345678910
0
100
200
300
400
di/dt = 100A/µs
di/dt = 50A / µs
Reve rse R eco very Tim e , t rr [ns ]
Forward Current , IF [A]
80 100 120 140 160
0
1
2
3
4
5
6
7
8
9
10
DC
Av e ra ge F o rw a rd C u rre n t , I F(AV) [A]
Ca se Tem pe rature , TC [oC]
©2001 Fairchild Semiconductor Corporation Rev. A, March 2001
FFPF60B150DS
Package Dimensions
Dimensions in Millimeters
TO-220F
(7.00) (0.70)
MAX1.47
(30°)
#1
3.30
±0.10
15.80
±0.20
15.87
±0.20
6.68
±0.20
9.75
±0.30
4.70
±0.20
10.16
±0.20
(1.00x45°)
2.54
±0.20
0.80
±0.10
9.40
±0.20
2.76
±0.20
0.35
±0.10
ø3.18
±0.10
2.54TYP
[2.54
±0.20
]2.54TYP
[2.54
±0.20
]
0.50
+0.10
–0.05
©2001 Fairchild Semiconductor Corporation Rev. H1
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intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production Th is datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete Not In Production This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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