V
RRM
= 50 V - 1000 V
I
F
=1 A
Features
• Types up to 1000 V V
RRM
• Ideal for printed circuit board DB Package
• High surge current capability
• Small size, simple installation
Mechanical Data
Case: Molded plastic
Polarity: Polarity symbols marked on body
Mounting position: Any
Silicon Bridge
Rectifier
• High temperature soldering guaranteed: 250⁰C/ 10
seconds
DB101G thru DB104G
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Terminals: Plated leads, solderable per MIL-STD-202
Method 208 guaranteed
Parameter Symbol DB101G DB102G Unit
Repetitive peak reverse voltage V
RRM
50 100 V
RMS reverse voltage V
RMS
35 70 V
DC blocking voltage V
DC
50 100 V
Continuous forward current I
F
11 A
Operating temperature T
j
-65 to 150 -65 to 150 °C
Storage temperature T
stg
-65 to 150 -65 to 150 °C
Parameter Symbol DB101G DB102G Unit
Diode forward voltage 1.1 1.1
55
500 500
Thermal characteristics
Thermal resistance, junction -
case R
thJC
20.00 20.00 °C/W
-65 to 150 -65 to 150
Conditions
T
C
= 25 °C, t
p
= 8.3 ms
400
280
400200
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
-65 to 150
DB104G
55
DB103G
20.00
V
R
= 50 V, T
j
= 125 °C
20.00
1.1 1.1
500
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
V
R
= 50 V, T
j
= 25 °C
I
F
= 1 A, T
j
= 25 °C
T
C
≤ 40 °C
Conditions
DB104G
200
140
DB103G
30 30
-65 to 150
11
500
A30
Reverse current I
R
V
F
30
μA
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DB101G thru DB104G
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