SEMTECH CORP S6E D MM 81439139 0002597? 945 MBSET 1N5615 thru 1N5623 S2F thru SOF FAST RECOVERY AXIALLEADED HERMETICALLY SEALED QUICK FAST RECTIFIER DIODE REFERENCE DATA * Low reverse recovery time Vr =200- 1000V Hermetically sealed in Metoxilite fused metal oxide e IF =2.00A * Low switching losses * tr = 150 - 500nS Low forward voltage drop * Ip =O.5uA * Soft, non-snap off, recovery characteristics ABSOLUTE MAXIMUM RATINGS (@ 25C unless otherwise specified) 1N5615 1N5617 1N5619 1N5621 1N5623 i Symbol |OF S4F SOF SSF SOF) Working reverse voltage VrawM |200 400 600 800 1000} V Repetitive reverse voltage VRRM 200 400 600 800 1000} V Average forward current IF(AV) 2.0 A (@ 55C, lead length 0.375") Repetitive surge current IFRM + 6.0 A (@ 55C in free air, lead length 0.375") Non-repetitive surge current IrsM 25 A (tp = 8.3mS, @ Vr & Tjmax ) Storage temperature range TsTG -65 to +175 > C Operating temperature range Top _ -65 to +175 > C MECHANICAL These products are qualified to a MIL-S-19500/429 and are preferred [ Ge parts as listed in MIL-STD-701. They can be supplied fully released as JAN, JANTX, and JANTXV versions. These products are qualified in Europe to DEF STAN 59-61 (PART 80)/029. NOTES: 1. LEAD DIAMETER UNCONTROLLED 8 OVER THIS REGION. Weight = 0.040z DS-020 2-67 SEMTECH CORPORATIONSEMTECH CORP 58E D MM 4139139 0002598 641 MBSET 1N5615 thru 1N5623 S2F thru SOF FAST RECOVERY ELECTRICAL CHARACTERISTICS @ 25C unless otherwise specified) 1N5615 1N5617 1N5619 1N5621 1N5623 i symbol |QoF SMF S6F SSF. SOF| OU" Average forward current max. (pcb mounted; Ta = 55C) for sine wave IF(AV) 1.00 A for square wave (d = 0.5) Ip(AV) 1.05 A Average forward current max. (TL = 55C; L = 3/8") for sine wave IF(AV) 1.95 A for square wave TRAV) 2.00 > A Vt for fusing (t = 8.3mS) max. rt 2.5 AsS Forward voltage drop max. @ IF = 1.0A, Tj = 25C VE 1.2 Vv Reverse current max. @ VrwM, Tj = 25C IR 0.5 pA @ Vrwy, Tj = 100C IR 25 pA Reverse recovery time max. trr 150 150 250 300 500 ns 0.5A Ig to 1.0A Ir. Recovers to 0.25A Irr Junction capacitance typ. Cj 27 27 27 18 18 pF @ Vr =5V,f = 1MHz THERMAL CHARACTERISTICS 1N5615 1N5617 1N5619 1N5621 1N5623] yp, Symbol |r S4F S6F. so S8EF_S SOR] OM Thermal resistance - junction to lead Lead length = 0.375" RgL 38 C/W Lead length = 0.0" Ret 7 C/W Thermal resistance - junction to amb. on 0.06" thick pcb. 1 oz. copper. RejA 95 > 1C/W SEMTECH CORPORATION 2-68 DS-020SEMTECH CORP FAST RECOVERY Typ @T, = 175C Ir (Amps) Max @T, = 25C 00 0.4 08 12 16 20 Vr (Volts) Fig 1. Forward voltage drop as a function of forward current. 10? 10? 10 10 10 10? t (Secs) Fig 3. Transient thermal impedance characteristic. DS-020 S56E D MM 6139339 0002599 718 MBSET 1N5615 thru 1N5623 S2F thru SOF 100 80 Pr (Watts) 6.0 40 20 0 TL CC) Fig 2. Maximum power versus lead temperature. Q35 10 G 1N5615, (PF) 1N5617 1N5619 1N5621 10 1N5623 10 40 10 10! 10? 10 Vp (Volts) Fig 4. Typical junction capacitance as a function of reverse voltage. 2-69 SEMTECH CORPORATIONSEMTECH CORP SOE 1N5615 thru 1N5623 S2F thru SOF D WH 8139139 0002600 chT MBSET FAST RECOVERY 8.0 Pr (Watts) 6.0 4.0 2.0 0 1.0 20 3.0 4.0 50 IRav) (Amps) Fig 5. Forward power dissipation as a function of forward current, for sinusoidal operation. 10? 10 t (Secs) 10' 10 10? Fig 7. Typical repetitive forward current as a function of pulse width at 55C; Ret = 35 C/W; Vewn during 1 - 6. SEMTECH CORPORATION 10.0 Tit batt Le Curent Waveform 8.0 Pr (Watts) 60 40 20 0 1.0 20 3.0 40 5.0 IRav) (Amps) Fig 6. Forward power dissipation as a function of forward current, for square wave operation. 10.0 80 TrRM (Amps) 60 4.0 2.0 10? 10 ' 40 10" 10? t (Secs) Fig 8. Typical repetitive forward current as a function of pulse width at 100C; Ran = 95 C/W; Vrwo during 1 - 8. 2-70 DS-020