VRRM = IF = 2500 V 108 A Fast-Diode Die 5SLX 12L2507 Die size: 12.4 x 12.4 mm Doc. No. 5SYA1667-00 Dec 06 * * * * Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1) Parameter Symbol Repetitive peak reverse voltage Continuous forward current Repetitive peak forward current Junction temperature 1) min Unit VRRM 2500 V IF 108 A 216 A -40 125 C typ max Unit Limited by Tvjmax Tvj Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2 Diode characteristic values Parameter 2) Symbol Conditions Continuous forward voltage VF IF = 108 A Continuous reverse current IR VR = 2500 V Peak reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 2) max IFRM Conditions Erec IF = 108 A, VR = 1250 V, di/dt = 420 A/s, L = 1200 nH, Inductive load, Switch: 2x 5SMX12L2511 min Tvj = 25 C 1.95 V Tvj = 125 C 1.95 V Tvj = 25 C 2 A Tvj = 125 C 1.5 Tvj = 25 C 85 A Tvj = 125 C 110 A Tvj = 25 C 43 C Tvj = 125 C 80 C Tvj = 25 C 600 ns Tvj = 125 C 1020 ns Tvj = 25 C 37 mJ Tvj = 125 C 70 mJ Characteristic values according to IEC 60747 - 2 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 7 mA 5SLX 12L2507 140 216 189 120 Erec [mJ], Qrr [C], Irr [A] 135 108 81 125 C 100 Erec 80 60 40 54 VR = 1250 V di/dt = 420 A/s Tvj = 125 C L = 1.2 H 25 C 20 27 0 0 1.5 2 2.5 3 0 54 108 VF [V] Typical forward characteristics Fig. 2 0 0 IR [A] -200 120 -400 100 -600 IR 60 -108 -1000 40 -1200 20 -1400 0 VR -216 1 2 3 4 Typical reverse recovery behaviour Erec 0 5 100 200 300 400 500 600 di/dt [A/s] time [s] Fig. 3 Irr Qrr -800 -162 VR = 1250 V IF = 108 A Tvj = 125 C L = 1.2 H 80 -54 0 324 Typical reverse recovery characteristics vs. forward current RG = 47 ohm 54 270 140 Erec [mJ], Qrr [C], Irr [A] VR = 1250 V IR = 108 A di/dt = 420 A/s Tvj = 125 C L = 1.2 H VR [V] 162 108 216 IF [A] RG = 68 ohm Fig. 1 162 RG = 16.5 ohm 1 RG = 22 ohm 0.5 RG = 33 ohm 0 RG = 10 ohm IF [A] Qrr Irr 162 Fig. 4 Typical reverse recovery characteristics vs. di/dt ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1667-00 Dec 06 page 2 of 3 5SLX 12L2507 Mechanical properties Parameter Unit Dimensions Overall die L x W 12.4 x 12.4 mm exposed LxW front metal 9.48 x 9.48 mm 310 20 m thickness Metallization 3) 3) front (A) AlSi1 + TiNiAg 4+4 m back (K) AlSi1 + TiNiAg 1.8 + 1.2 m For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033. +0.04 9.48 -0 10.46 12.38 0.05 Outline Drawing Note : All dimensions are shown in mm This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1667-00 Dec 06