ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VRRM
= 2500
V
IF = 108
A
Die size: 12.4 x 12.4 mm
Doc. No. 5SYA1667-00 Dec 06
• Fast and soft reverse-recovery
• Low losses
• High SOA
• Passivation: SIPOS Nitride plus Polyimide
Maximum rated values 1)
Parameter Symbol Conditions min max Unit
Repetitive peak reverse voltage VRRM 2500
V
Continuous forward current IF 108 A
Repetitive peak forward current IFRM Limited by Tvjmax 216 A
Junction temperature Tvj -40 125 °C
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 2
Diode characteristic values 2)
Parameter Symbol Conditions min typ max Unit
Tvj = 25 °C
1.95 V
Continuous forward voltage VF IF = 108 A Tvj = 125 °C
1.95 V
Tvj = 25 °C
2 µA
Continuous reverse current IR VR = 2500 V Tvj = 125 °C
1.5 7 mA
Tvj = 25 °C
85 A
Peak reverse recovery current Irr Tvj = 125 °C
110 A
Tvj = 25 °C
43 µC
Recovered charge Qrr Tvj = 125 °C
80 µC
Tvj = 25 °C
600 ns
Reverse recovery time trr Tvj = 125 °C
1020
ns
Tvj = 25 °C
37 mJ
Reverse recovery energy Erec
IF = 108 A,
VR = 1250 V,
di/dt = 420 A/µs,
Lσ = 1200 nH,
Inductive load,
Switch:
2x 5SMX12L2511
Tvj = 125 °C
70 mJ
2) Characteristic values according to IEC 60747 - 2
Fast-Diode Die
5SLX 12L2507
5SLX 12L2507
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1667-00 Dec 06 page 2 of 3
0
27
54
81
108
135
162
189
216
0 0.5 1 1.5 2 2.5 3
VF [V]
IF [A]
25 °C
125 °C
0
20
40
60
80
100
120
140
0 54 108 162 216 270 324
IF [A]
Erec [mJ], Qrr [µC], Irr [A]
Erec
Irr Qrr
VR = 1250 V
di/dt = 420 A/µs
Tvj = 125 °C
Lσ = 1.2 µH
Fig. 1 Typical forward characteristics Fig. 2 Typical reverse recovery characteristics
vs. forward current
-216
-162
-108
-54
0
54
108
162
0 1 2 3 4 5
time [µs]
IR [A]
-1400
-1200
-1000
-800
-600
-400
-200
0
VR [V]
VR
IR
VR = 1250 V
IR = 108 A
di/dt = 420 A/µs
Tvj = 125 °C
Lσ = 1.2 µH
0
20
40
60
80
100
120
140
0100 200 300 400 500 600
di/dt [A/µs]
Erec [mJ], Qrr [µC], Irr [A]
Irr
Qrr
Erec
VR = 1250 V
IF = 108 A
Tvj = 125 °C
Lσ = 1.2 µH
RG = 10 ohm
RG = 16.5 ohm
RG = 22 ohm
RG = 33 ohm
RG = 47 ohm
RG = 68 ohm
Fig. 3 Typical reverse recovery behaviour Fig. 4 Typical reverse recovery characteristics
vs. di/dt
5SLX 12L2507
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1667-00 Dec 06
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Mechanical properties
Parameter Unit
Overall die
L x W 12.4 x 12.4 mm
exposed
front metal
L x W 9.48 x 9.48 mm
Dimensions
thickness 310 ± 20 µm
front (A) AlSi1 + TiNiAg 4 + 4 µm
Metallization 3) back (K) AlSi1 + TiNiAg 1.8 + 1.2 µm
3) For assembly instructions refer to: IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.
Outline Drawing
9.48+0.04
-0
10.46
12.38±0.05
Note : All dimensions are shown in mm
This product has been designed and qualified for Industrial Level.
