BCP51M...BCP53M PNP Silicon AF Transistor 4 For AF driver and output stages 5 High collector current Low collector-emitter saturation voltage 3 Complementary types: BCP54M...BCP56M(NPN) 2 1 VPW05980 Type Marking Pin Configuration Package BCP51M AAs 1=B 2=C 3=E BCP52M AEs 1=B 2=C 3=E 4=n.c. 5 = C SCT595 4=n.c. 5 = C SCT595 BCP53M AHs 1=B 2=C 3=E 4=n.c. 5 = C SCT595 Maximum Ratings Parameter Symbol BCP51M BCP52M BCP53M Unit Collector-emitter voltage VCEO 45 60 80 Collector-base voltage VCBO 45 60 100 Emitter-base voltage VEBO 5 5 5 DC collector current IC Peak collector current ICM 1.5 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS 77 C Ptot 1.7 W Junction temperature Tj 150 C Storage temperature Tstg 1 V A mA -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 43 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-06-2001 BCP51M...BCP53M Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BCP51M 45 - - BCP52M 60 - - BCP53M 80 - - BCP51M 45 - - BCP52M 60 - - BCP53M 100 - - V(BR)EBO 5 - - ICBO - - 100 nA ICBO - - 20 A hFE 25 - - hFE 40 - 250 hFE 25 - - VCEsat - - 0.5 VBE(ON) - - 1 fT - 100 - Collector-base breakdown voltage IC = 100 A, IB = 0 V V(BR)CEO V(BR)CBO Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 C DC current gain 1) - IC = 5 mA, VCE = 2 V DC current gain 1) IC = 150 mA, VCE = 2 V DC current gain 1) IC = 500 mA, VCE = 2 V Collector-emitter saturation voltage1) V IC = 500 mA, IB = 50 mA Base-emitter voltage 1) IC = 500 mA, VCE = 2 V AC Characteristics Transition frequency MHz IC = 50 mA, VCE = 10 V, f = 100 MHz 1) Pulse test: t =300s, D = 2% 2 Jul-06-2001 BCP51M...BCP53M DC current gain hFE = f (I C) Total power dissipation Ptot = f (TS ) VCE = 2V 2000 10 3 BCP 51...53 EHP00261 mW 5 h FE 1600 P tot 1400 10 2 100 C 25 C -50 C 1200 5 1000 800 10 1 600 5 400 200 0 0 20 40 60 80 120 C 100 10 0 0 10 150 10 1 10 2 10 3 TS mA 10 4 C Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax / PtotDC = f (tp) 10 3 Ptotmax / PtotDC 10 2 RthJS K/W 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 - 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 -2 s 10 10 0 -6 10 0 TS 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 3 Jul-06-2001 BCP51M...BCP53M Collector cutoff current ICBO = f (TA) Transition frequency fT = f (IC) VCB = 30V VCE = 10 V 10 4 CBO BCP 51...53 EHP00262 BCP 51...53 10 3 EHP00260 MHz nA fT max 10 3 5 10 2 10 2 typ 10 1 5 10 0 10 -1 0 50 100 C 10 1 150 10 1 10 0 10 2 mA C TA Base-emitter saturation voltage Collector-emitter saturation voltage IC = f (VBEsat ), hFE = 10 IC = f (VCEsat), h FE = 10 10 4 C BCP 51...53 10 3 EHP00263 10 4 C mA BCP 51...53 EHP00264 mA 10 3 10 3 5 100 C 25 C -50C 10 2 100 C 25 C -50 C 10 2 5 10 1 10 1 5 10 0 0 0.2 0.4 0.6 0.8 V 10 0 1.2 V BEsat 0 0.2 0.4 0.6 V 0.8 V CEsat 4 Jul-06-2001