BCP51M...BCP53M
1 Jul-06-2001
PNP Silicon AF Transistor
For AF driver and output stages
High collector current
Low collector-emitter saturation voltage
Complementary types: BCP54M...BCP56M(NPN)
VPW05980
123
5
4
Type Marking Pin Configuration Package
BCP51M
BCP52M
BCP53M
AAs
AEs
AHs
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
3 = E
3 = E
3 = E
4=n.c.
4=n.c.
4=n.c.
5 = C
5 = C
5 = C
SCT595
SCT595
SCT595
Maximum Ratings
Parameter Symbol BCP51M BCP52M BCP53M Unit
Collector-emitter voltage VCEO 45 60 80 V
Collector-base voltage VCBO 45 60 100
Emitter-base voltage VEBO 5 5 5 ADC collector current IC1
Peak collector current ICM 1.5
100 mABase current IB
Peak base current 200
IBM
Ptot 1.7 W
Total power dissipation, TS
77 °C °C150Junction temperature Tj
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction - soldering point1) RthJS
43 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
BCP51M...BCP53M
2 Jul-06-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BCP51M
BCP52M
BCP53M
V(BR)CEO
45
60
80
-
-
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IB = 0
BCP51M
BCP52M
BCP53M
V(BR)CBO
45
60
100
-
-
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 5 - -
Collector cutoff current
VCB = 30 V, IE = 0 ICBO - - 100 nA
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C ICBO - - 20 µA
DC current gain 1)
IC = 5 mA, VCE = 2 V hFE 25 - - -
DC current gain 1)
IC = 150 mA, VCE = 2 V hFE 40 - 250
DC current gain 1)
IC = 500 mA, VCE = 2 V hFE 25 - -
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA VCEsat - - 0.5 V
Base-emitter voltage 1)
IC = 500 mA, VCE = 2 V VBE(ON) - - 1
AC Characteristics
fT- 100 - MHzTransition frequency
IC = 50 mA, VCE = 10 V, f = 100 MHz
1) Pulse test: t ≤=300µs, D = 2%
BCP51M...BCP53M
3 Jul-06-2001
DC current gain hFE = f (IC)
VCE = 2V
10
EHP00261BCP 51...53
04
10mA
0
10
3
10
5
5
10
1
10
2
10
1
C
FE
h
Ι
3
10
2
10
C
100
5
25
C
-50
C
Total power dissipation Ptot = f (TS)
0 20 40 60 80 100 120 °C 150
TS
0
200
400
600
800
1000
1200
1400
1600
mW
2000
P
tot
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load RthJS = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
TS
-1
10
0
10
1
10
2
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
BCP51M...BCP53M
4 Jul-06-2001
Collector cutoff current ICBO = f (TA)
VCB = 30V
0
10
EHP00262BCP 51...53
A
T
150
-1
4
10
Ι
CBO
nA
50 100
0
10
1
10
3
10
C
10
2
max
typ
Transition frequency fT = f (IC)
VCE = 10 V
10
EHP00260BCP 51...53
03
10mA
1
10
3
10
5
5
101102
102
C
T
fMHz
Ι
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
0
10
EHP00263BCP 51...53
BEsat
V
0
4
10
Ι
C
mA
0.2
1
10
2
10
3
10
0.4 0.6 0.8 1.2V
C
100
25
C
-50
C
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
0
10
EHP00264BCP 51...53
CEsat
V
0.4 V 0.8
0
101
102
4
10
5
5
Ι
CmA
5
3
10
0.2 0.6
C
100
25
C
C
-50
