1
Rectifier Device Data
. . . employing the Schottky Barrier principle in a large metal–to–silicon power
diode. State–of–the–art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and polarity
protection diodes.
•Very Low Forward Voltage (0.55 V Maximum @ 25 Amps)
•Matched Dual Die Construction (12.5 A per Leg or 25 A per
Package)
•Guardring for Stress Protection
•Highly Stable Oxide Passivated Junction (125°C Operating
Junction Temperature)
•Epoxy Meets UL94, VO at 1/8″
Mechanical Characteristics
•Case: Epoxy, Molded
•Weight: 1.9 grams (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes: 260°C Max. for 10
Seconds
•Shipped 50 units per plastic tube
•Marking: B2535L
MAXIMUM RATINGS (PER LEG)
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
35
35
35
Volts
Average Rectified Forward Current (Rated VR) TC = 110°C IF(AV) 12.5 Amps
Peak Repetitive Forward Current, Per Leg
(Rated VR, Square Wave, 20 kHz) TC = 95°CIFRM 25 Amps
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 150 Amps
Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) IRRM 1.0 Amp
Operating Junction Temperature TJ–65 to +125 °C
Storage Temperature Tstg –65 to +150 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/µs
Controlled Avalanche Energy W aval 20 mJ
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case RθJC 2.0 °C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (1)
(IF = 25 Amps, TJ = 25°C)
(IF = 12.5 Amps, TJ = 25°C)
(IF = 12.5 Amps, TJ = 125°C)
VF0.55
0.47
0.41
Volts
Maximum Instantaneous Reverse Current (1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR5.0
500
mA
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤2.0%.
SWITCHMODE is a trademark of Motorola, Inc.
Motorola, Inc. 1996
Order this document
by MBR2535CTL/D
SEMICONDUCTOR TECHNICAL DATA
1
3
2, 4
SCHOTTKY BARRIER
RECTIFIER
25 AMPERES
35 VOLTS
CASE 221A–06
(TO–220AC)
1
3
4
2
Rev 1
MBR2535CTL
2Rectifier Device Data
50
20
10
5
2
1
0.5
0.2
0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 10
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage, Per Leg
TJ = 25
°
C
TJ = 125
°
C
I , INSTANEOUS FORWARD CURRENT (AMP)
F
1000
100
10
1
0.1
I , REVERSE CURRENT (mA)
R
VR, REVERSE VOLTAGE (VOLTS)
05101520253035
Figure 2. Typical Reverse Current, Per Leg
TJ = 25
°
C
TJ = 100
°
C
TJ = 125
°
C
40
35
30
25
20
15
10
5
0
P , AVERAGE FORWARD POWER DISSIPATION (WATTS)
F(AV)
0 5 10 15 20 25 30 35 40
IF(AV), AVERAGE FORW ARD CURRENT (AMPS)
Figure 3. Forward Power Dissipation, Per Leg
TJ = 125
°
C
SINE W AVE
(RESISTIVE LOAD)
SQUARE
WAVE
dc
32
28
24
20
16
12
8
4
085 95 105 115 125
I , AVERAGE FORWARD CURRENT (AMPS)
F(AV)
TC, CASE TEMPERATURE (
°
C)
Figure 4. Current Derating
(RATED Vr APPLIED)
R
θ
JC = 2.0
°
C/W
dc
SQUARE
20
18
16
14
12
10
8
6
4
2
00 25 50 75 100 125
I , AVERAGE FORWARD CURRENT (AMPS)
F(AV)
TA, AMBIENT TEMPERATURE (
°
C)
Figure 5. Current Derating Ambient, Per Leg
R
θ
JA = 16
°
C/W
dc
SQUARE
WAVE
MBR2535CTL
3
Rectifier Device Data
PACKAGE DIMENSIONS
CASE 221A–06
(TO–220AB)
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.147 3.61 3.73
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.018 0.025 0.46 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 ––– 1.15 –––
Z––– 0.080 ––– 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
–T–
C
S
T
U
R
J
ISSUE Y
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
MBR2535CTL
4Rectifier Device Data
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MBR2535CTL/D
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