CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
G
D
S
050-5895 Rev C 8-2003
APT Website - http://www.advancedpower.com
LINEAR MOSFET
SOT-227
GS
S
D
ISOTOP
®"UL Recognized"
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent high voltage and high current can occur at
near DC conditions (>100 msec).
• Higher FBSOA
• Higher Power Dissipation
• Popular SOT-227 Package
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 12V)
Drain-Source On-State Resistance 2 (VGS = 12V, 21.5A)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
MIN TYP MAX
600
43
0.125
25
250
±100
24
UNIT
Volts
Amps
Ohms
µA
nA
Volts
Symbol
BVDSS
ID(ON)
RDS(ON)
IDSS
IGSS
VGS(TH)
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
APL602J
600
43
172
±30
±40
565
4.52
-55 to 150
300
43
50
3000
APL602J
600V 43A 0.125ΩΩ
ΩΩ
Ω
DYNAMIC CHARACTERISTICS APL602J
050-5895 Rev C 8-2003
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
MIN TYP MAX
7600 9000
1280 1810
620 930
13 26
24 48
58 87
14 17
UNIT
pF
ns
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 15V
VDD = 0.5 VDSS
ID = 43A @ 25°C
RG = 0.6Ω
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
THERMAL CHARACTERISTICS
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Maximum Torque for Device Mounting Screws and Electrical Terminations.
Symbol
RθJC
RθJA
VIsolation
Torque
MIN TYP MAX
.22
40
2500
10
UNIT
°C/W
Volts
lb•in
1Repetitive Rating: Pulse width limited by maximum junction 3See MIL-STD-750 Method 3471
temperature. 4Starting Tj = +25°C, L = 3.24mH, RG = 25Ω, Peak IL = 43A
2Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
0.9
0.05
ZΘJC, THERMAL IMPEDANCE (°C/W)
SINGLE PULSE
FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL
0.0520
0.155
0.0126
0.0261
F
0.423F
67.451
F
Power
(Watts)
Junction
temp. ( ”C)
RC MODEL
Case temperature
050-5895 Rev C 8-2003
Typical Performance Curves APL602J
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
0 50 100 150 200 250 0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, HIGH OUTPUT CHARACTERISTICS FIGURE 3, LOW OUTPUT CHARACTERISTICS
7 V
6 V
6.5 V
VGS=10V, 15 V
5.5 V
7.5 V
8 V
120
100
80
60
40
20
0
120
100
80
60
40
20
0
7 V
6 V
6.5 V
5.5 V
7.5 V
VGS=10, 15V
8 V
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
0 2 4 6 8 10 0 20 40 60 80 100 120
25 50 75 100 125 150 -50 0 50 100 150
1.30
1.20
1.10
1.00
0.90
0.80
0.70
1.15
1.10
1.05
1.00
0.95
0.90
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +125°C
TJ = +25°C TJ = -55°C
VGS=10V
VGS=20V
NORMALIZED TO
VGS = 10V @ 21.5A
ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
VOLTAGE (NORMALIZED)
80
60
40
20
0
45
40
35
30
25
20
15
10
05
0
OPERATION HERE
LIMITED BY RDS (ON)
TC =+25°C
TJ =+150°C
SINGLE PULSE
100µS
1mS
10mS
100mS
SOT-227 (ISOTOP®) Package Outline
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
0.75 (.030)
0.85 (.033) 12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
* Source Drain
Gate
*
r = 4.0 (.157)
(2 places) 4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
* Source
Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
APL602J
050-5895 Rev C 8-2003
Crss
Ciss
Coss
ID, DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
C, CAPACITANCE (pF) VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
1 5 10 50 100 600 .01 .1 1 10 50
1.2
1.1
1.0
0.9
0.8
0.7
0.6
30,000
10,000
5,000
1,000
500
100
2.5
2.0
1.5
1.0
0.5
0.0
172
100
10
5
1
.1
ID = 21.5A
VGS = 12V
DC Line
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
ISOTOP® is a Registered Trademark of SGS Thomson.
