MCCSEMI.COM
Rev.3-1-01012019 1/4
PNP
Silicon Epitaxial
Transistors
2SA1213-O/2SA1213-Y
YORank
Range
Marking
70-140
NO
120-240
NY
V
V
Unit
Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS
Compliant. See Ordering Information)
Moisture Sensitivity Level 1
Epoxy Meets UL 94 V-0 Flammability Rating
500
1000(Note1)
-0.4
A
mW
A
V
VCEO
VEBO
IC
PC
IB
Rating
-50
-50
-5
-2
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Note1: Mounted on ceramic substrate (250mm2 x 0.8t)
Classification Of hFE
Base Current
Symbol
VCBO
Maximum Ratings @ 25°C Unless Otherwise Specified
Operating Junction Temperature Range: -55 to +150
Storage Temperature Range: -55 to +150
Features
High Speed Switching Time
Halogen Free Available Upon Request By Adding Suffix "-HF"
SOT-89
Suggested Solder Pad Layout
inches
mm
B
A
F
L
GH
K
J
C
D
E
1 2 3
2.600
0.102
1.400
0.055
4.400
0.173
3.200
0.126
1.900
0.075
0.800
0.032
0.900
0.035
1.500
0.059
1.400
0.055
MIN MAX MIN MAX
A0.169 0.1854.304.70
B0.0611.55
C 0.154 0.171 3.91 4.35
D 0.031 0.047 0.80 1.20
E0.089 0.1042.25 2.65
F0.118 3.00 TYP.
G 0.013 0.020 0.33 0.52
H 0.015 0.021 0.38 0.53
J0.0140.0170.350.44
K 0.055 0.063 1.40 1.60
DIMENSIONS
DIM INCHES MM NOTE
L0.059 1.50TYP.
TYP.
L
Pin Configuration - Top View
C
E
B
B C E
Internal Structure
C
Thermal Resistance: 250/W Junction to Ambient
MCCSEMI.COM
Rev.3-1-01012019 2/4
Electrical Characteristics @ 25°C Unless Otherwise Specified
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltag
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
V
Emitter-Base Breakdown Voltage V(BR)EBO -5 VIE=-100µA, IC=0
V(BR)CBO -50
VCE=-2V, IC=-0.5A
Collector Output Capacitance Cob 40 pF VCB=-10V, IE=0, f=1.0MHz
Transition Frequency fT100 120 MHz
VIC=-1A, IB=-50mA
Collector-Emitter Saturation Voltage VCE(sat) -0.5 V
Base-Emitter Saturation Voltage VBE(sat) -1.2 IC=-1A, IB=-50mA
IEBO 70
DC Current Gain hFE2 20
ICBO -0.1
-50
VCE=-2Vdc, IC=-0.5AhFE1
VCB=-50V, IE=0
µA
µA VEB=-5V, IC=0
240
-0.1
VCE=-2Vdc, IC=-2A
Parameter Symbol Min Typ Max Units Conditions
VIC=-100µA, IE=0
IC=-10mA, IB=0V(BR)CEO
2SA1213-O/2SA1213-Y
MCCSEMI.COM
Rev.3-1-01012019 3/4
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5
0
-200
-400
-600
-800
-1000
-6mA
-4.2mA
-3.6mA
-3.0mA
-2.4mA
-1.8mA
-1.2mA
IB= -0.6mA
COMMON EMITTER
TA=25°C
Collector Current (mA)
Collector-Emitter Voltage (V)
Fig. 1 - Static Characteristics
-4.8mA
-5.4mA
-1 -10 -1000
10
100
1000
Common Emitter
VCE=-2V
TA=100°C
DC Current Gain
-100
Collector Current (mA)
Fig. 2 - DC Current Gain Characteristics
TA=25°C
-2000
-1 -10 -100 -1000
-10
-100
-1000
β=20
TA=100°C
Collector-Emitter Saturation Voltage (mV)
Collector Current (mA)
Fig. 3 - Collector-Emitter Saturation Voltage Characteristics
TA=25°C
-1 -10 -100 -1000
-200
-300
-400
-500
-600
-700
-800
-900
-1000
β=20
TA=100°C
Base-Emitter Saturation Voltage (mV)
Collector Current (mA)
Fig. 4 - Base-Emitter Saturation Voltage Characteristics
TA=25°C
0 25 50 75 100 125 150
0
100
200
300
400
500
600
Power Dissipation (mW)
Ambient Temperature (°C)
Fig. 6 - Power Derating Curve
Curve Characteristics
-1
-10
-100
-1000
-0.0 -0.2 -0.8 -1.0
Common Emitter
VCE=-2V
TA=100°C
TA=25°C
-0.4 -0.6
Base-Emitter Voltage (V)
Collcetor Current (mA)
Fig. 5 - Base-Emitter Voltage Characteristics
2SA1213-O/2SA1213-Y
MCCSEMI.COM
Rev.3-1-01012019 4/4
Ordering Information
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Device Packing
Part Number-TP Tape&Reel:1Kpcs/Reel
Note : Adding "-HF" Suffix For Halogen Free, eg. Part Number-TP-HF
2SA1213-O/2SA1213-Y