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DATA SH EET
Product data sheet 2001 Jan 18
DISCRETE SEMICONDUCTORS
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
Schottky barrier (double) diodes
db
ook, halfpage
M3D102
2001 Jan 18 2
NXP Semiconductors Product data sheet
Schottky barrier (double) diodes 1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
FEATURES
•Low forward vo lta ge
•Very small SMD plastic package
•Low diode capac i ta nce.
APPLICATIONS
•UHF mixers
•Sampling circuits
•Modulators
•Phase detecto rs.
DESCRIPTION
Planar Schottky barrier diode s
encapsulated in a SOT323 (SC-70)
very small plastic SMD package.
Single diodes and double diodes with
different pinning are available. ESD
sensitive devic e, ob se rve handling
precautions.
MARKING
PINNING
TYPE NUMBER MARKING
CODE
1PS70SB82 88
1PS70SB84 87
1PS70SB85 85
1PS70SB86 86
PIN SYMBOL
1PS70SB82
1 a
2n.c.
3 k
1PS70SB84
1 a1
2 k2
3 k1 and a2
1PS70SB85
1 a1
2 a2
3 k1 and k2
1PS70SB86
1 k1
2 k2
3 a1 and a2
handbook, 2 columns 3
12
MBC870
Top view
Fig.1 Simplified outline
(SOT323; SC-70) and
pin configuration.
3
1
2
n.
c.
MLC357
Fig.2 1PS70SB82 single
diode configuration
(symbol).
Fig.3 1PS70SB84 diode
configuration (sym bol).
3
12
MLC35
8
Fig.4 1PS70SB85 diode
configuration (sym bol).
3
12
MLC35
9
Fig.5 1PS70SB86 diode
configuration (sym bol).
3
12
MLC36
0
2001 Jan 18 3
NXP Semiconductors Pr oduct dat a shee t
Schottky barrier (double) diodes 1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
LIMITING VALUES
In accordance with th e Absolute Maximum Ratin g S ystem (IEC 60134).
THERMAL CHARACTE RISTICS
Note
1. Refer to (SOT323; SC-70) standard mounting cond itions.
ELECTRICAL CHARACTERISTIC S
Tamb = 25 °C; unless otherwise specified.
Note
1. Pulsed test: tp = 300 μs; δ = 0.02.
SYMBOL PARAMETER MIN. MAX. UNIT
Per diode
VRcontinuous revers e voltage −15 V
IFcontinuous forward current −30 mA
Tstg storage temperature −65 +150 °C
Tjjunction temperature −125 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 625 K/W
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Per diode
VFforward voltage see Fig.6
IF = 1 mA −340 mV
IF = 30 mA −700 mV
rDdifferential diode fo rward resistance f = 1 MHz; IF = 5 mA; see Fig.9 12 − Ω
IRcontinuous rev ers e current VR = 1 V; note 1; see Fig.7 −0.2 μA
Cddiode capacit an c e VR = 0; f = 1 MHz; see Fig.8 1−pF
2001 Jan 18 4
NXP Semiconductors Pr oduct dat a shee t
Schottky barrier (double) diodes 1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
handbook, halfpage
1.60 0.4 0.8
103
102
10
1
MGT835
1.2 VF (V)
IF
(mA)
(2)
(1) (3)
(2)(1) (3)
Fig.6 Forward current as a function of forward
voltage; typical values.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
handbook, halfpage
0510
VR (V)
IR
(μA)
15
MGT836
103
102
10
1
10−1
10−2
(2)
(1)
(3)
Fig.7 Reverse current as a fun ction of reverse
voltage; typical values.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
handbook, halfpage
0
1
0.8
0.6
0.4 2
Cd
(pF)
10
MGT837
468
VR (V)
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb = 25 °C.
handbook, halfpage
103
10
102
1
MGT838
10−11
rD
(Ω)
10 IF (mA) 102
Fig.9 Differential diode forward resistanc e as a
function of forward current; typical values.
f = 1 MHz; Tamb = 25 °C.
2001 Jan 18 5
NXP Semiconductors Pr oduct dat a shee t
Schottky barrier (double) diodes 1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
PACKAGE OUTLINE
UNIT A1
max bpcD Ee1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.1
1.1
0.8 0.4
0.3 0.25
0.10 2.2
1.8 1.35
1.15 0.65
e
1.3 2.2
2.0 0.23
0.13 0.20.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323 SC-70
wM
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
vMA
AB
y
0 1 2 mm
scale
A
X
12
3
Plastic surface mounted package; 3 leads SOT32
3
97-02-28
2001 Jan 18 6
NXP Semiconductors Pr oduct dat a shee t
Schottky barrier (double) diodes 1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
DATA SHEET STATUS
Notes
1. Please consult the most rec en tly issued document before initiating or co mpleting a design.
2. The product s tatus of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DOCUMENT
STATUS(1) PRODUCT
STATUS(2) DEFINITION
Objective data sheet Development This document contains data from the objective specification for pro duct
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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Quick refer ence data ⎯ The Quick reference data is an
extract of th e product data given in the Limiting values and
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NXP Semiconductors
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information pr e sent ed in this documen t d oes not form par t o f an y q uotation or contract, is believed to be a ccur ate a nd reliable and may be change d
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under patent- or other industrial or intellectual property rights.
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Printed in The Netherlands 613514/01/pp7 Date of release: 2001 Jan 18 Document orde r number: 9397 750 07669
