TLP621, TLP621-2, TLP621-4 HIGH DENSITY MOUNTING PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 TLP621 DESCRIPTION The TLP621, TLP621-2 , TLP621-4 series of optically coupled isolators consist of infrared light emitting diodes and NPN silicon photo transistors in space efficient dual in line plastic packages. Dimensions in mm 2.54 1 2 7.0 6.0 4 3 1.2 5.08 4.08 7.62 4.0 3.0 FEATURES Options :0.5 10mm lead spread - add G after part no. 3.0 Surface mount - add SM after part no. 3.35 Tape&reel - add SMT&R after part no. 0.5 TLP621-2 l High Current Transfer Ratio ( 50% min) 2.54 l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High BVCEO ( 55Vmin ) l All electrical parameters 100% tested 7.0 l Custom electrical selections available 6.0 APPLICATIONS l Computer terminals 1.2 l Industrial systems controllers 10.16 l Measuring instruments 9.16 4.0 l Signal transmission between systems of 3.0 different potentials and impedances 13 Max l 0.26 1 8 2 3 7 6 5 4 7.62 13 Max 0.5 3.0 0.26 3.35 0.5 1 TLP621-4 3 4 2.54 7.0 6.0 OPTION SM OPTION G SURFACE MOUNT 7.62 1.2 20.32 19.32 0.6 0.1 10.46 9.86 1.25 0.75 13 5 12 6 11 7 8 10 9 7.62 4.0 3.0 13 Max 0.5 0.26 10.16 16 15 14 2 3.0 0.5 3.35 0.26 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 DB92547m-AAS/A1 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 125C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 5V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 55V 6V 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/C above 25C) ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) Input Output Coupled PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 1.0 5 Collector-emitter Breakdown (BVCEO) 55 ( Note 2 ) Emitter-collector Breakdown (BVECO) 6 Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (Note 2) TLP621, TLP621-2, TLP621-4 CTR selection available GB BL GB 7/12/00 1.3 10 100 50 100 200 30 Collector-emitter Saturation VoltageVCE (SAT) GB Input to Output Isolation Voltage VISO 5300 7500 Input-output Isolation Resistance RISO 5x1010 Rise Time tr Fall Time tf Turn-on Time ton Turn-off Time toff Note 1 Note 2 1.15 600 600 600 0.4 0.4 2 3 3 3 TEST CONDITION V V A IF = 10mA IR = 10A VR = 5V V IC = 0.5mA V nA IE = 100A VCE = 24V % % % % 5mA IF , 5V VCE V V VRMS VPK s s s s 8mA IF , 2.4mA IC 1mA IF , 0.2mA IC See note 1 See note 1 VIO = 500V (note 1) VCC =10V , IC = 2mA, RL = 100 1mA IF , 0.4V VCE Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB92547m-AAS/A1 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Low Collector-emitter Voltage TA = 25C 25 Collector current I C (mA) Collector power dissipation P C (mW) 200 150 100 50 0 15 50 40 30 20 10 10 5 20 5 IF = 2mA 0 -30 0 25 50 75 100 0 125 Ambient temperature TA ( C ) 0.2 50 50 Collector current I C (mA) Forward current I F (mA) 1.0 TA = 25C 30 50 40 30 20 10 0 20 40 15 30 10 20 10 IF = 5mA 0 -30 0 25 50 75 100 125 0 Ambient temperature TA ( C ) Collector-emitter Saturation Voltage vs. Ambient Temperature (V) 2 4 6 8 10 Collector-emitter voltage VCE ( V ) Current Transfer Ratio vs. Forward Current 320 0.28 280 0.24 Current transfer ratio CTR (%) CE(SAT) 0.8 Collector Current vs. Collector-emitter Voltage 60 Collector-emitter saturation voltage V 0.6 Collector-emitter voltage VCE ( V ) Forward Current vs. Ambient Temperature IF = 5mA IC = 1mA 0.20 0.16 0.12 0.08 0.04 240 200 160 120 80 VCE = 5V TA = 25C 40 0 0 -30 0 25 50 75 Ambient temperature TA ( C ) 7/12/00 0.4 100 1 2 5 10 20 50 Forward current IF (mA) DB92547m-AAS/A1