LKE21015T NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The LKE21015T is Designed for Class A Common Emitter Amplifier Applications to 2.1 GHz. PACKAGE STYLE .250 2L FLG FEATURES INCLUDE: * Replacement for Philips LKE21015R * Gold Metalization * Diffused Emitter Ballasting MAXIMUM RATINGS IC 800 mA VCB 45 V PDISS 8.0 W @ TC = 25 C TJ -55 C to +200 C TSTG -55 C to +200 C JC 11 C/W CHARACTERISTICS 1&4 = EMITTER 2 = BASE 3 = COLLECTOR TC = 25 C SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 2.0 mA 45 V BVCEO IC = 20 mA 22 V BVEBO IE = 2.0 mA 3.5 V hFE VCE = 5.0 V 20 --- Cob VCB = 28 V Pg PL1 VCE = 20 V IC = 200 mA f = 1.0 MHz IC = 300 mA f = 2.1 GHz 1.5 5.0 pF 10 dB 1.7 W A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1