N-CHANNEL POWER
MOSFET
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Document Number 3351
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Issue 3
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2N7225 / IRFM250
• VDSS = 200V, ID(CONT) = 27.4A, RDS(ON) = 100mΩ
• Hermetic Isolated Metal TO-254AA Package
• Integral Body Diode
• High-Reliability Screening Options Available
• Tabless and Z Tab options available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VDS Drain – Source Voltage 200V
VGS Gate – Source Voltage ±20V
ID Continuous Drain Current Tc = 25°C 27.4A
ID Continuous Drain Current Tc = 100°C 17A
IDM Pulsed Drain Current
(1)
110A
PD Total Power Dissipation at Tc = 25°C 150W
Derate Above 25°C 1.2W/°C
dv/dt Peak Diode Recovery
(2)
5.5V/ns
TJ Junction Temperature Range -55 to +150°C
Tstg Storage Temperature Range -55 to +150°C
THERMAL PROPERTIES
Symbol Parameter Max Units
RθJC Thermal Resistance Junction to Case 0.83 °C/W
INTERNAL PACKAGE INDUCTANCE
Symbols Parameters Min. Typ. Max. Units
LD Internal Drain Inductance 8.7
LS Internal Source Inductance 8.7
nH
Notes
NotesNotes
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
(2) @ ISD ≤ 27.4A, di/dt ≤ 190A/µs, VDD ≤ BVDSS, TJ ≤ 150°C, Suggested RG = 2.35Ω
(3) Pulse Width ≤ 300us, δ ≤ 2%
N-CHANNEL POWER MOSFET
2N7225 / IRFM250
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Document Number 3351
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Issue 3
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Units
BVDSS Drain-Source Breakdown
Voltage VGS = 0 ID = 1.0mA 200 V
J
T
DSS
BV
∆
∆
Temperature Coefficent of
Breakdown Voltage
Reference
to 25°C ID = 1.0mA 0.28 V/°C
VGS = 10V ID = 17A 0.100
RDS(on)
(3)
Static Drain-Source
On-State Resistance VGS = 10V ID = 27.4A 0.105
Ω
VDS = VGS ID = 250
µ
A 2 4
TJ = 125°C 1.0
VGS(th) Gate Threshold Voltage
TJ = -55°C 5
V
gfs
(3)
Forward Transconductance VDS
≥
15V I DS = 17A 9 S(
Ʊ
)
VGS = 0 VDS = 0.8BVDSS 25
IDSS Zero Gate Voltage
Drain Current TJ = 125°C 250
µ
A
VGS = 20V 100
IGSS Forward Gate-Source
Leakage VDS = 0V TJ = 125°C 200
VGS = -20V -100
IGSS Reverse Gate-Source
Leakage VDS = 0V TJ = 125°C -200
nA
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 3500
Coss Output Capacitance VDS = 25V 700
Crss Reverse Transfer
Capacitance f = 1.0MHz 110
pF
Qg Total Gate Charge VGS = 10V 85
Qgs Gate-Source Charge ID = 27.4A 15
Qgd Gate-Drain Charge VDS = 0.5BVDSS 45
nC
td(on) Turn-On Delay Time 35
tr Rise Time 190
td(off) Turn-Off Delay Time 170
tf Fall Time
VDD = 100V
ID = 27.4A
VGS = 10V
RG = 2.35
Ω
130
ns
SOURCE-DRAIN DIODE CHARACTERISTICS
IS Continuous Source Current 27.4
ISM
(1)
Pulse Source Current 110
A
IS = 27.4A TJ = 25°C
VSD
(3)
Diode Forward Voltage VGS = 0
1.9 V
ton Forward Turn-On Time Negligible
N-CHANNEL POWER MOSFET
2N7225 / IRFM250
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Document Number 3351
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Issue 3
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (Inches)
123
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
3.78 (0.149) Dia.
6.32 (0.249)
6.60 (0.260) 1.02 (0.040)
1.27 (0.050)
30.35 (1.195)
31.40 (1.235)
16.89 (0.665)
17.40 (0.685)
13.59 (0.535)
13.84 (0.545)
20.07 (0.790)
20.32 (0.800)
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045) 3.81 (0.150)
BSC
TO-254AA
Isolated Metal Package
PIN 1 – Drain PIN 2 – Source PIN 3 - Gate
