PD - 94927A IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF Applications l l HEXFET(R) Power MOSFET High frequency DC-DC converters Lead-Free VDSS RDS(on) max Benefits l l l Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current 150V 0.045: ID 41A TO-220AB TO-220 FullPak D2Pak TO-262 IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D Absolute Maximum Ratings Parameter ID @ TC = 25C Max. Units 41 Continuous Drain Current, VGS @ 10V ID @ TC = 100C Continuous Drain Current, VGS @ 10V 29 IDM Pulsed Drain Current 164 PD @TA = 25C Power Dissipation, D Pak 3.1 PD @TC = 25C Power Dissipation, TO-220 200 PD @TC = 25C Power Dissipation, Fullpak 48 c 2 A W Linear Derating Factor, TO-220 1.3 W/C Linear Derating Factor, Fullpak 0.32 30 V VGS Gate-to-Source Voltage dv/dt TJ Peak Diode Recovery dv/dt Operating Junction and TSTG Storage Temperature Range e 2.7 -55 to + 175 V/ns C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 1.1(10) N*m (lbf*in) Thermal Resistance Typ. Max. Units RJC Junction-to-Case Parameter --- 0.75 C/W RJC Junction-to-Case, Fullpak --- 3.14 Rcs Case-to-Sink, Flat, Greased Surface 0.50 --- RJA Junction-to-Ambient, TO-220 --- 62 RJA h Junction-to-Ambient, D Pak i RJA Junction-to-Ambient, Fullpak Notes 2 h --- 40 --- 65 through are on page 12 www.irf.com 1 08/10/06 IRFB/IRFIB/IRFS/IRFSL41N15DPbF Static @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ RDS(on) --- V Conditions VGS = 0V, ID = 250A 150 --- Breakdown Voltage Temp. Coefficient --- 0.17 --- Static Drain-to-Source On-Resistance --- --- 0.045 V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 25A f VGS(th) Gate Threshold Voltage 3.0 --- 5.5 V VDS = VGS, ID = 250A IDSS Drain-to-Source Leakage Current --- --- 25 A VDS = 150V, VGS = 0V --- --- 250 Gate-to-Source Forward Leakage --- --- 100 Gate-to-Source Reverse Leakage --- --- -100 IGSS VDS = 120V, VGS = 0V, TJ = 150C nA VGS = 30V VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units S Conditions VDS = 50V, ID = 25A gfs Qg Forward Transconductance 18 --- --- Total Gate Charge --- 72 110 Qgs Gate-to-Source Charge --- 21 31 Qgd Gate-to-Drain ("Miller") Charge --- 35 52 VGS = 10V td(on) Turn-On Delay Time --- 16 --- VDD = 75V tr Rise Time --- 63 --- ID = 25A td(off) Turn-Off Delay Time --- 25 --- tf Fall Time --- 14 --- VGS = 10V Ciss Input Capacitance --- 2520 --- VGS = 0V Coss Output Capacitance --- 510 --- Crss Reverse Transfer Capacitance --- 110 --- Coss Output Capacitance --- 3090 --- = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz Coss Output Capacitance --- 230 --- VGS = 0V, VDS = 120V, = 1.0MHz Coss eff. Effective Output Capacitance --- 250 --- VGS = 0V, VDS = 0V to 120V ID = 25A nC ns VDS = 120V RG = 2.5 f f VDS = 25V pF g Avalanche Characteristics Parameter EAS Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy c Diode Characteristics Parameter d c Typ. --- Max. 470 --- 25 A --- 20 mJ Min. Typ. Max. Units Units mJ Conditions IS Continuous Source Current --- --- 41 ISM (Body Diode) Pulsed Source Current --- --- 164 showing the integral reverse VSD (Body Diode) Diode Forward Voltage --- --- 1.3 V p-n junction diode. TJ = 25C, IS = 25A, VGS = 0V trr Reverse Recovery Time --- 170 260 ns TJ = 25C, IF = 25A Qrr Reverse Recovery Charge ton Forward Turn-On Time 2 c MOSFET symbol A D G S f f --- 1.3 1.9 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFB/IRFIB/IRFS/IRFSL41N15DPbF 1000 1000 VGS 15V 10V 9.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 10 1 0.1 100 20s PULSE WIDTH TJ = 25 C 6.0V 1 10 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 100 TJ = 175 C TJ = 25 C 10 V DS = 25V 20s PULSE WIDTH 8 9 10 Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 3.0 7 1 VDS , Drain-to-Source Voltage (V) 1000 VGS , Gate-to-Source Voltage (V) 20s PULSE WIDTH TJ = 175 C 1 0.1 100 Fig 1. Typical Output Characteristics 1 6.0V 10 VDS , Drain-to-Source Voltage (V) 6 VGS 15V 10V 9.0V 8.0V 7.5V 7.0V 6.5V BOTTOM 6.0V TOP TOP 11 ID = 41A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRFB/IRFIB/IRFS/IRFSL41N15DPbF VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds Crss = C gd Coss = C ds + Cgd 10000 Ciss 1000 Coss 100 Crss ID = 25A VDS = 120V VDS = 75V VDS = 30V 16 12 8 4 10 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 1000 40 60 80 100 120 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) 100 TJ = 175 C 10us 100 10 TJ = 25 C 100us 10 1ms 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) ISD , Reverse Drain Current (A) C, Capacitance(pF) 20 SHORTED VGS , Gate-to-Source Voltage (V) 100000 1.8 1 10ms TC = 25 C TJ = 175 C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFB/IRFIB/IRFS/IRFSL41N15DPbF 50 VGS 40 ID , Drain Current (A) RD V DS RG D.U.T. + -VDD VGS 30 Pulse Width 1 s Duty Factor 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.1 PDM 0.10 t1 0.05 0.02 0.01 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFB/IRFIB/IRFS/IRFSL41N15DPbF EAS , Single Pulse Avalanche Energy (mJ) 1200 15V VDS D.U.T RG IAS VGS 20V tp DRIVER + V - DD A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp BOTTOM BOTTOM 25A TOP 1000 L IIDD 7.3A 10A 13A 21A 18A TOP 800 600 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F VGS QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFB/IRFIB/IRFS/IRFSL41N15DPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D.U.T + - - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRFB/IRFIB/IRFS/IRFSL41N15DPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) MIN 1 LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- SOURCE 4 - DRAIN 3- EMITTER HEXFET 2 3 4- COLLECTOR 4- DRAIN 14.09 (.555) 13.47 (.530) 4.06 (.160) 3.55 (.140) 3X 1.40 (.055) 3X 1.15 (.045) 0.93 (.037) 0.69 (.027) 0.36 (.014) 3X M B A M 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information (;$03/( 7+,6,6$1,5) /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(& Note: "P" in assembly line position indicates "Lead-Free" ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 8 3$57180%(5 '$7(&2'( <($5 :((. /,1(& www.irf.com IRFB/IRFIB/IRFS/IRFSL41N15DPbF TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information (;$03/( 7+,6,6$1,5),* :,7+$66(0%/< /27&2'( $66(0%/('21:: ,17+($66(0%/</,1(. Note: "P" in assembly line position indicates "Lead-Free" www.irf.com ,17(51$7,21$/ 5(&7,),(5 /2*2 $66(0%/< /27&2'( 3$57180%(5 ,5 ) , * . '$7(&2'( <($5 :((. /,1(. 9 IRFB/IRFIB/IRFS/IRFSL41N15DPbF D2Pak Package Outline D2Pak Part Marking Information (Lead-Free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www.irf.com IRFB/IRFIB/IRFS/IRFSL41N15DPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information (;$03/( 7+,6,6$1,5// /27&2 '( $66(0%/('2 1:: ,17+($66(0%/</,1(& 1RWH3LQDVVHP EO\OLQH SRVLWLRQLQGLFDWHV/HDG)UHH ,17(51$7,2 1$/ 5(&7,),(5 /2 *2 $66(0%/< /27&2'( 3$571 80%(5 '$7(&2 '( <($5 :((. /,1(& OR ,17(51$7,21$/ 5(&7,),(5 /2* 2 $66(0%/< /2 7&2 '( www.irf.com 3$57180%(5 '$7(&2 '( 3 ' (6,*1$7(6/($')5(( 352 '8&7 237,2 1$/ <($5 :((. $ $66(0%/<6,7(&2 '( 11 IRFB/IRFIB/IRFS/IRFSL41N15DPbF D2Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 30.40 (1.197) MAX. 26.40 (1.039) 24.40 (.961) 3 4 Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.5mH, RG = 25, IAS = 25A. ISD 25A, di/dt 340A/s, VDD V(BR)DSS, TJ 175C. Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS This is only applied to TO-220AB package. This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. TO-220AB & TO-220 FullPak packages are not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 08/2006 12 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/