NXP Semiconductors Technical Data Document Number: AFV10700H Rev. 2, 08/2019 RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for pulse applications operating at 960 to 1215 MH z . T hes e dev ic es are s uitable f or us e in defens e and commercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS--B transponders, DME and other complex pulse chains. Typical Performance: In 1030-1090 MHz reference circuit, IDQ(A+B) = 100 mA Frequency (MHz) (1) 1030 Signal Type Pulse (128 sec, 10% Duty Cycle) 1090 1030 VDD (V) Pout (W) Gps (dB) D (%) 50 800 Peak 17.5 52.1 700 Peak 19.0 56.1 850 Peak 17.5 51.7 770 Peak 19.2 56.1 52 1090 Typical Performance: In 960-1215 MHz reference circuit, IDQ(A+B) = 100 mA Frequency (MHz) 960 Signal Type Pulse (128 sec, 4% Duty Cycle) 1030 1090 VDD (V) Pout (W) Gps (dB) D (%) 50 747 Peak 16.7 50.8 713 Peak 16.5 49.7 700 Peak 16.5 47.1 704 Peak 16.5 54.5 1215 AFV10700H AFV10700HS AFV10700GS 960-1215 MHz, 700 W PEAK, 52 V AIRFAST RF POWER LDMOS TRANSISTORS NI--780H--4L AFV10700H NI--780S--4L AFV10700HS Typical Performance: In 1030 MHz narrowband production test fixture, IDQ(A+B) = 100 mA Frequency (MHz) 1030 (2) Signal Type Pulse (128 sec, 10% Duty Cycle) VDD (V) Pout (W) Gps (dB) D (%) 50 730 Peak 19.2 58.5 NI--780GS--4L AFV10700GS Narrowband Load Mismatch/Ruggedness Frequency (MHz) 1030 (2) Signal Type VSWR Pin (W) Test Voltage Pulse (128 sec, 10% Duty Cycle) > 20:1 at All Phase Angles 17.2 Peak (3 dB Overdrive) 50 Result No Device Degradation 1. Measured in 1030-1090 MHz reference circuit (page 5). 2. Measured in 1030 MHz narrowband production test fixture (page 9). Features Internally input and output matched for broadband operation and ease of use Device can be used in a single--ended, push--pull or quadrature configuration Qualified up to a maximum of 55 VDD operation High ruggedness, handles > 20:1 VSWR Gate A 3 1 Drain A Gate B 4 2 Drain B (Top View) Note: The backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation and gate voltage pulsing Recommended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W) Included in NXP product longevity program with assured supply for a minimum of 15 years after launch 2017-2019 NXP B.V. RF Device Data NXP Semiconductors AFV10700H AFV10700HS AFV10700GS 1 Table 1. Maximum Ratings Symbol Value Unit Drain--Source Voltage Rating VDSS -0.5, +105 Vdc Gate--Source Voltage VGS -6.0, +10 Vdc Operating Voltage VDD 55, +0 Vdc Storage Temperature Range Tstg - 65 to +150 C TC -55 to +150 C Case Operating Temperature Range Operating Junction Temperature Range (1,2) Total Device Dissipation @ TC = 25C Derate above 25C TJ -55 to +225 C PD 526 2.63 W W/C Symbol Value (2,3) Unit ZJC 0.030 C/W Table 2. Thermal Characteristics Characteristic Thermal Impedance, Junction to Case Pulse: Case Temperature 75C, 730 W Peak, 128 sec Pulse Width, 10% Duty Cycle, 50 Vdc, IDQ(A+B) = 100 mA, 1030 MHz Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22--A114) 2, passes 2000 V Charge Device Model (per JESD22--C101) C3, passes 2000 V Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) Characteristic Off Characteristics Symbol Min Typ Max Unit IGSS -- -- 1 Adc 105 -- -- Vdc (4) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) V(BR)DSS Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS -- -- 1 Adc Zero Gate Voltage Drain Leakage Current (VDS = 105 Vdc, VGS = 0 Vdc) IDSS -- -- 10 Adc Gate Threshold Voltage (4) (VDS = 10 Vdc, ID = 260 Adc) VGS(th) 1.3 1.8 2.3 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, IDQ(A+B) = 100 mAdc, Measured in Functional Test) VGS(Q) 1.6 2.1 2.6 Vdc Drain--Source On--Voltage (4) (VGS = 10 Vdc, ID = 2.6 Adc) VDS(on) -- 0.28 -- Vdc Crss -- 1.16 -- pF On Characteristics Dynamic Characteristics (4,5) Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) 1. 2. 3. 4. 5. Continuous use at maximum temperature will affect MTTF. MTTF calculator available at http://www.nxp.com. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955. Each side of device measured separately. Part internally matched both on input and output. (continued) AFV10700H AFV10700HS AFV10700GS 2 RF Device Data NXP Semiconductors Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Functional Tests (In NXP Narrowband Production Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 100 mA, Pout = 730 W Peak (73 W Avg.), f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle Power Gain Gps 18.0 19.2 21.0 dB Drain Efficiency D 54.5 58.5 -- % Input Return Loss IRL -- -15 -9 dB Load Mismatch/Ruggedness (In NXP Narrowband Production Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA Frequency (MHz) Signal Type 1030 Pulse (128 sec, 10% Duty Cycle) VSWR > 20:1 at All Phase Angles Pin (W) 17.2 Peak (3 dB Overdrive) Test Voltage, VDD Result 50 No Device Degradation Table 5. Ordering Information Device AFV10700HR5 AFV10700HSR5 AFV10700GSR5 Tape and Reel Information R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel Package NI--780H--4L NI--780S--4L NI--780GS--4L AFV10700H AFV10700HS AFV10700GS RF Device Data NXP Semiconductors 3 TYPICAL CHARACTERISTICS 1.11 Measured with 30 mV (rms) ac @ 1 MHz VGS = 0 Vdc 10 VDD = 50 Vdc 1.08 NORMALIZED VGS(Q) C, CAPACITANCE (pF) 100 Crss 1.05 IDQ(A+B) = 100 mA 500 mA 1.02 1000 mA 0.99 0.96 0.93 1 0 10 20 30 40 0.90 -75 50 -50 -25 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 0 25 50 75 100 TC, CASE TEMPERATURE (C) Note: Each side of device measured separately. IDQ (mA) Figure 2. Capacitance versus Drain--Source Voltage Slope (mV/C) 100 -2.73 500 -2.39 1500 -2.09 Figure 3. Normalized VGS versus Quiescent Current and Case Temperature 109 VDD = 50 Vdc ID = 19.67 Amps MTTF (HOURS) 108 107 24.39 Amps 106 28.40 Amps 105 104 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) Note: MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.nxp.com. Figure 4. MTTF versus Junction Temperature - Pulse AFV10700H AFV10700HS AFV10700GS 4 RF Device Data NXP Semiconductors 1030-1090 MHz REFERENCE CIRCUIT - 2.0 3.0 (5.1 cm 7.6 cm) Table 6. 1030-1090 MHz Performance (In NXP Reference Circuit, 50 ohm system) IDQ(A+B) = 100 mA Frequency (MHz) 1030 1090 Signal Type Pulse (128 sec, 10% Duty Cycle) 1030 VDD (V) Pout (W) Gps (dB) D (%) 50 800 Peak 17.5 52.1 700 Peak 19.0 56.1 850 Peak 17.5 51.7 770 Peak 19.2 56.1 52 1090 NOTE: Size of the matching area: 1.3 2.6 (3.3 cm 6.6 cm) AFV10700H AFV10700HS AFV10700GS RF Device Data NXP Semiconductors 5 1030-1090 MHz REFERENCE CIRCUIT - 2.0 3.0 (5.1 cm 7.6 cm) C12* C17 C5 C8* C18 C13 C6* C7* C14* C15 C16* C2* R1 Q1 C1* C11* C3* C4* C9* C10* D85937 *C1, C2, C3, C4, C6, C7, C8, C9, C10, C11, C12, C14 and C16 are mounted vertically. Figure 5. AFV10700H Reference Circuit Component Layout - 1030-1090 MHz Table 7. AFV10700H Reference Circuit Component Designations and Values - 1030-1090 MHz Part Description Part Number Manufacturer C1 1.5 pF Chip Capacitor ATC800B1R5BT500XT ATC C2, C8, C14 39 pF Chip Capacitor ATC800B390JT500XT ATC C3, C4 4.3 pF Chip Capacitor ATC800B4R3CT500XT ATC C5, C15 2.2 F Chip Capacitor C3225X7R2A225K230AB TDK C6, C12 1000 pF Chip Capacitor ATC800B102JT50XT ATC C7 100 pF Chip Capacitor ATC800B101JT500XT ATC C9 4.7 pF Chip Capacitor ATC800B4R7CT500XT ATC C10, C11 3.3 pF Chip Capacitor ATC800B3R3CT500XT ATC C13 1.0 F Chip Capacitor GRM31CR72A105KA01L Murata C16 270 pF Chip Capacitor ATC800B271JT200XT ATC C17, C18 470 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp Q1 RF High Power LDMOS Transistor AFV10700H NXP R1 22 , 1/8 W Chip Resistor RK73H2ATTD22R0F KAO Speer PCB Rogers RO3010 0.025, r = 11.2 D85937 MTL AFV10700H AFV10700HS AFV10700GS 6 RF Device Data NXP Semiconductors TYPICAL CHARACTERISTICS - 1030-1090 MHz REFERENCE CIRCUIT 21 70 Gps 60 D 19 50 1030 MHz 1030 MHz 18 40 17 30 16 20 VDD = 50 Vdc, IDQ(A+B) = 100 mA Pulse Width = 128 sec, Duty Cycle = 10% 15 0 100 200 300 400 500 600 700 800 D DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 1090 MHz 1090 MHz 20 10 900 1000 Pout, OUTPUT POWER (WATTS) PEAK Figure 6. Power Gain and Drain Efficiency versus Output Power - 50 V 70 21 Gps, POWER GAIN (dB) 1090 MHz Gps 60 D 1030 MHz 19 50 1030 MHz 18 40 30 17 16 20 VDD = 52 Vdc, IDQ(A+B) = 100 mA Pulse Width = 128 sec, Duty Cycle = 10% 15 0 200 400 600 800 1000 D DRAIN EFFICIENCY (%) 1090 MHz 20 10 1200 Pout, OUTPUT POWER (WATTS) PEAK Figure 7. Power Gain and Drain Efficiency versus Output Power - 52 V AFV10700H AFV10700HS AFV10700GS RF Device Data NXP Semiconductors 7 1030-1090 MHz REFERENCE CIRCUIT Zo = 5 f = 1090 MHz Zload f = 1030 MHz f = 1030 MHz Zsource f = 1090 MHz f MHz Zsource Zload 1030 2.3 - j1.7 0.91 - j0.76 1090 2.0 - j1.9 0.88 - j0.47 Zsource = Test circuit impedance as measured from gate to ground. Zload 50 = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Zsource 50 Zload Figure 8. Series Equivalent Source and Load Impedance - 1030-1090 MHz AFV10700H AFV10700HS AFV10700GS 8 RF Device Data NXP Semiconductors 1030 MHz NARROWBAND PRODUCTION TEST FIXTURE - 4.0 5.0 (10.2 cm 12.7 cm) C1 C3 C25 B1 AFV10700H Rev. 0 C5 C7 D89532 C17 C12 R1 Coax1 C27 Coax3 L1 C14* C9 C11 C16 C22* C23* C24* CUT OUT AREA C10 Coax2 C19* C20* C21* C15* L2 R2 Coax4 C13 C2 B2 C4 C8 C6 C18 C26 C28 *C14, C15, C19, C20, C21, C22, C23 and C24 are mounted vertically. Figure 9. AFV10700H Narrowband Test Circuit Component Layout - 1030 MHz Table 8. AFV10700H Narrowband Test Circuit Component Designations and Values - 1030 MHz Part Description Part Number Manufacturer B1, B2 Short RF Bead 2743019447 Fair--Rite C1, C2 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet C3, C4 2.2 F Chip Capacitor C1825C225J5RAC Kemet C5, C6 0.1 F Chip Capacitor CDR33BX104AKWS AVX C7, C8, C19, C20, C21, C22, C23, C24 43 pF Chip Capacitor ATC100B430JT500XT ATC C9, C10 3.3 pF Chip Capacitor ATC100B3R3CT500XT ATC C11 0.7 pF Chip Capacitor ATC100B0R7BT500XT ATC C12, C13 36 pF Chip Capacitor ATC100B360JT500XT ATC C14, C15 5.1 pF Chip Capacitor ATC100B5R1CT500XT ATC C16 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC C17, C18 0.01 F Chip Capacitor C1825C103K1GACTU Kemet C25, C26, C27, C28 470 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp Coax1, Coax2, Coax3, Coax4 35 Semi Rigid Coax 1.98 Shield Length HSF--141--35--C Hongsen Cable L1, L2 12 nH Inductor, 3 Turns GA3094--ALC Coilcraft R1, R2 5.6 1/4 W Chip Resistor CRCW12065R60FKEA Vishay PCB Arlon, AD255A, 0.03, r = 2.55 D89532 MTL AFV10700H AFV10700HS AFV10700GS RF Device Data NXP Semiconductors 9 TYPICAL CHARACTERISTICS - 1030 MHz, TC = 25_C PRODUCTION TEST FIXTURE 70 19.5 60 Gps 50 D 18.5 40 18.0 30 17.5 20 17.0 50 24 Gps, POWER GAIN (dB) 22 100 300 200 20 500 mA 19 100 mA 17 50 500 100 1000 Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 10. Power Gain and Drain Efficiency versus Output Power Figure 11. Power Gain versus Output Power and Quiescent Drain Current 1200 IDQ(A+B) = 100 mA, f = 1030 MHz Pulse Width = 128 sec, Duty Cycle = 10% 20 18 50 V 16 45 V 14 35 V 12 10 50 IDQ(A+B) = 1000 mA 18 10 1000 700 500 21 Gps, POWER GAIN (dB) 20.0 19.0 VDD = 50 Vdc, f = 1030 MHz Pulse Width = 128 sec, Duty Cycle = 10% 80 40 V VDD = 30 V 100 500 200 Pout, OUTPUT POWER (WATTS) PEAK Gps, POWER GAIN (dB) 20.5 22 90 VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1030 MHz Pulse Width = 128 sec, Duty Cycle = 10% D, DRAIN EFFICIENCY (%) 21.0 VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1030 MHz Pulse Width = 128 sec, Duty Cycle = 10% 1000 TC = -55_C 85_C 600 400 200 0 28 1000 25_C 800 32 30 34 36 38 40 42 44 Pin, INPUT POWER (dBm) PEAK Pout, OUTPUT POWER (WATTS) PEAK Figure 12. Power Gain versus Output Power and Drain Voltage f (MHz) P1dB (W) P3dB (W) 1030 740 883 Figure 13. Output Power versus Input Power 24 Gps, POWER GAIN (dB) 80 VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1030 MHz Pulse Width = 128 sec, Duty Cycle = 10% 22 70 TC = 25_C D 85_C 20 50 TC = -55_C 18 Gps 16 25_C 0 200 400 600 800 40 30 85_C 14 12 60 -55_C D, DRAIN EFFICIENCY (%) 26 20 1000 10 1200 Pout, OUTPUT POWER (WATTS) PEAK Figure 14. Power Gain and Drain Efficiency versus Output Power AFV10700H AFV10700HS AFV10700GS 10 RF Device Data NXP Semiconductors 1030 MHz NARROWBAND PRODUCTION TEST FIXTURE f MHz Zsource Zload 1030 4.0 - j6.9 3.9 - j1.4 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload 50 Input Matching Network = Test circuit impedance as measured from drain to drain, balanced configuration. + Device Under Test -- -- + Zsource Zload Output Matching Network 50 Figure 15. Series Equivalent Source and Load Impedance - 1030 MHz AFV10700H AFV10700HS AFV10700GS RF Device Data NXP Semiconductors 11 PACKAGE DIMENSIONS AFV10700H AFV10700HS AFV10700GS 12 RF Device Data NXP Semiconductors AFV10700H AFV10700HS AFV10700GS RF Device Data NXP Semiconductors 13 AFV10700H AFV10700HS AFV10700GS 14 RF Device Data NXP Semiconductors AFV10700H AFV10700HS AFV10700GS RF Device Data NXP Semiconductors 15 AFV10700H AFV10700HS AFV10700GS 16 RF Device Data NXP Semiconductors AFV10700H AFV10700HS AFV10700GS RF Device Data NXP Semiconductors 17 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following resources to aid your design process. Application Notes AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File Development Tools Printed Circuit Boards REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 May 2017 Initial release of data sheet 1 Jan. 2018 Added part number AFV10700GS, p. 1 Production test fixture, Typical Characteristic graphs: clarified temperature condition, p. 10 Added NI--780GS--4L package isometric, p. 1, and Mechanical Outline, pp. 16-17 2 Aug. 2019 Overview copy and device description: updated to reflect frequency band operation from 960-1215 MHz, p. 1 Typical Performance table: added 960-1215 MHz performance data, p. 1 Table 6, 1030-1090 Component Layout Parts List: updated the part number and description for C16 and R1, p. 6 AFV10700H AFV10700HS AFV10700GS 18 RF Device Data NXP Semiconductors How to Reach Us: Home Page: nxp.com Web Support: nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. 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NXP, the NXP logo and Airfast are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2017-2019 NXP B.V. AFV10700H AFV10700HS AFV10700GS Document Number: RF Device Data AFV10700H Rev. 2,Semiconductors 08/2019 NXP 19