AFV10700H AFV10700HS AFV10700GS
1
RF Device Data
NXP Semiconductors
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These RF power transistors are designed for pulse applications operating at
960 to 1215 MHz. These devices are suitable for use in defense and
commercial pulse applications with large duty cycles and long pulses, such as
IFF, secondary surveillance radars, ADS--B transponders, DME and other
complex pulse chains.
Typical Performance: In 1030–1090 MHz reference circuit, IDQ(A+B) = 100 mA
Frequency
(MHz) (1) Signal Type
VDD
(V)
Pout
(W)
Gps
(dB)
D
(%)
1030 Pulse
(128 sec,
10% Duty Cycle)
50 800 Peak 17.5 52.1
1090 700 Peak 19.0 56.1
1030 52 850 Peak 17.5 51.7
1090 770 Peak 19.2 56.1
Typical Performance: In 960–1215 MHz reference circuit, IDQ(A+B) = 100 mA
Frequency
(MHz) Signal Type
VDD
(V)
Pout
(W)
Gps
(dB)
D
(%)
960 Pulse
(128 sec,
4% Duty Cycle)
50 747 Peak 16.7 50.8
1030 713 Peak 16.5 49.7
1090 700 Peak 16.5 47.1
1215 704 Peak 16.5 54.5
Typical Performance: In 1030 MHz narrowband production test fixture,
IDQ(A+B) = 100 mA
Frequency
(MHz) Signal Type
VDD
(V)
Pout
(W)
Gps
(dB)
D
(%)
1030 (2) Pulse
(128 sec,
10% Duty Cycle)
50 730 Peak 19.2 58.5
Narrowband Load Mismatch/Ruggedness
Frequency
(MHz) Signal Type VSWR
Pin
(W)
Test
Voltage Result
1030 (2) Pulse
(128 sec,
10% Duty Cycle)
> 20:1 at
All Phase
Angles
17.2 Peak
(3 dB
Overdrive)
50 No Device
Degradation
1. Measured in 1030–1090 MHz reference circuit (page 5).
2. Measured in 1030 MHz narrowband production test fixture (page 9).
Features
Internally input and output matched for broadband operation and ease of use
Device can be used in a single--ended, push--pull or quadrature configuration
Qualified up to a maximum of 55 VDD operation
High ruggedness, handles > 20:1 VSWR
Integrated ESD protection with greater negative gate--source voltage range
for improved Class C operation and gate voltage pulsing
Recommended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W)
Included in NXP product longevity program with assured supply for a
minimum of 15 years after launch
Document Number: AFV10700H
Rev. 2, 08/2019
NXP Semiconductors
Technical Data
960–1215 MHz, 700 W PEAK, 52 V
AIRFAST RF POWER LDMOS
TRANSISTORS
AFV10700H
AFV10700HS
AFV10700GS
NI--780S--4L
AFV10700HS
NI--780H--4L
AFV10700H
Figure 1. Pin Connections
(Top View)
Drain A
31
42
Drain B
Gate A
Gate B
Note: The backside of the package is the
source terminal for the transistor.
NI--780GS--4L
AFV10700GS
2017–2019 NXP B.V.
2
RF Device Data
NXP Semiconductors
AFV10700H AFV10700HS AFV10700GS
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS –0.5, +105 Vdc
Gate--Source Voltage VGS –6.0, +10 Vdc
Operating Voltage VDD 55, +0 Vdc
Storage Temperature Range Tstg –65to+150 C
Case Operating Temperature Range TC–55 to +150 C
Operating Junction Temperature Range (1,2) TJ–55 to +225 C
Total Device Dissipation @ TC=25C
Derate above 25C
PD526
2.63
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Impedance, Junction to Case
Pulse: Case Temperature 75C, 730 W Peak, 128 sec Pulse Width,
10% Duty Cycle, 50 Vdc, IDQ(A+B) = 100 mA, 1030 MHz
ZJC 0.030 C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2000 V
Charge Device Model (per JESD22--C101) C3, passes 2000 V
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics (4)
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
Drain--Source Breakdown Voltage
(VGS =0Vdc,I
D=10A)
V(BR)DSS 105 — — Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50Vdc,V
GS =0Vdc)
IDSS — — 1 Adc
Zero Gate Voltage Drain Leakage Current
(VDS = 105 Vdc, VGS =0Vdc)
IDSS — — 10 Adc
On Characteristics
Gate Threshold Voltage (4)
(VDS =10Vdc,I
D= 260 Adc)
VGS(th) 1.3 1.8 2.3 Vdc
Gate Quiescent Voltage
(VDD =50Vdc,I
DQ(A+B) = 100 mAdc, Measured in Functional Test)
VGS(Q) 1.6 2.1 2.6 Vdc
Drain--Source On--Voltage (4)
(VGS =10Vdc,I
D=2.6Adc)
VDS(on) —0.28 —Vdc
Dynamic Characteristics (4,5)
Reverse Transfer Capacitance
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —1.16 —pF
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
(continued)
AFV10700H AFV10700HS AFV10700GS
3
RF Device Data
NXP Semiconductors
Table 4. Electrical Characteristics (TA=25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Functional Tests (In NXP Narrowband Production Test Fixture, 50 ohm system) VDD =50Vdc,I
DQ(A+B) = 100 mA, Pout = 730 W Peak
(73 W Avg.), f = 1030 MHz, 128 sec Pulse Width, 10% Duty Cycle
Power Gain Gps 18.0 19.2 21.0 dB
Drain Efficiency D54.5 58.5 — %
Input Return Loss IRL — –15 –9 dB
Load Mismatch/Ruggedness (In NXP Narrowband Production Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA
Frequency
(MHz)
Signal
Type VSWR
Pin
(W) Test Voltage, VDD Result
1030 Pulse
(128 sec,
10% Duty Cycle)
> 20:1 at All Phase Angles 17.2 Peak
(3 dB Overdrive)
50 No Device Degradation
Table 5. Ordering Information
Device Tape and Reel Information Package
AFV10700HR5 R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel NI--780H--4L
AFV10700HSR5
R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel
NI--780S--4L
AFV10700GSR5 NI--780GS--4L
4
RF Device Data
NXP Semiconductors
AFV10700H AFV10700HS AFV10700GS
TYPICAL CHARACTERISTICS
1
02010
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
10
Measured with 30 mV (rms) ac @ 1 MHz
VGS =0Vdc
Note: Each side of device measured separately.
30 40 50
Figure 3. Normalized VGS versus Quiescent
Current and Case Temperature
NORMALIZED VGS(Q)
TC, CASE TEMPERATURE (C)
100–50 0–25 25 50 75
100 –2.73
IDQ (mA) Slope (mV/C)
500 –2.39
1500 –2.09
–75
0.90
0.93
0.96
0.99
1.02
1.05
1.11
1.08
100
Crss
IDQ(A+B) = 100 mA
500 mA
1000 mA
VDD =50Vdc
250
108
90
TJ, JUNCTION TEMPERATURE (C)
Figure 4. MTTF versus Junction Temperature – Pulse
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http://www.nxp.com.
106
105
104
110 130 150 170 190
MTTF (HOURS)
210 230
107
109
ID= 19.67 Amps
24.39 Amps
28.40 Amps
VDD =50Vdc
AFV10700H AFV10700HS AFV10700GS
5
RF Device Data
NXP Semiconductors
1030–1090 MHz REFERENCE CIRCUIT – 2.03.0(5.1 cm 7.6 cm)
Table 6. 1030–1090 MHz Performance (In NXP Reference Circuit, 50 ohm system) IDQ(A+B) = 100 mA
Frequency
(MHz) Signal Type
VDD
(V)
Pout
(W)
Gps
(dB)
D
(%)
1030 Pulse
(128 sec, 10% Duty Cycle)
50 800 Peak 17.5 52.1
1090 700 Peak 19.0 56.1
1030 52 850 Peak 17.5 51.7
1090 770 Peak 19.2 56.1
NOTE: Size of the matching area: 1.32.6(3.3 cm 6.6 cm)
6
RF Device Data
NXP Semiconductors
AFV10700H AFV10700HS AFV10700GS
1030–1090 MHz REFERENCE CIRCUIT – 2.03.0(5.1 cm 7.6 cm)
Figure 5. AFV10700H Reference Circuit Component Layout – 1030–1090 MHz
*C1, C2, C3, C4, C6, C7, C8, C9, C10, C11, C12, C14 and C16 are mounted vertically.
C2*
C11*
C3*
C4*
R1
C5
C6*
C16*
C9*
C17 C18
C7*
C8*
C15
C10*
C14*
C13
C12*
Q1
D85937
C1*
Table 7. AFV10700H Reference Circuit Component Designations and Values – 1030–1090 MHz
Part Description Part Number Manufacturer
C1 1.5 pF Chip Capacitor ATC800B1R5BT500XT ATC
C2, C8, C14 39 pF Chip Capacitor ATC800B390JT500XT ATC
C3, C4 4.3 pF Chip Capacitor ATC800B4R3CT500XT ATC
C5, C15 2.2 F Chip Capacitor C3225X7R2A225K230AB TDK
C6, C12 1000 pF Chip Capacitor ATC800B102JT50XT ATC
C7 100 pF Chip Capacitor ATC800B101JT500XT ATC
C9 4.7 pF Chip Capacitor ATC800B4R7CT500XT ATC
C10, C11 3.3 pF Chip Capacitor ATC800B3R3CT500XT ATC
C13 1.0 F Chip Capacitor GRM31CR72A105KA01L Murata
C16 270 pF Chip Capacitor ATC800B271JT200XT ATC
C17, C18 470 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp
Q1 RF High Power LDMOS Transistor AFV10700H NXP
R1 22 , 1/8 W Chip Resistor RK73H2ATTD22R0F KAO Speer
PCB Rogers RO3010 0.025,r=11.2 D85937 MTL
AFV10700H AFV10700HS AFV10700GS
7
RF Device Data
NXP Semiconductors
TYPICAL CHARACTERISTICS – 1030–1090 MHz
REFERENCE CIRCUIT
15
21
Pout, OUTPUT POWER (WATTS) PEAK
Figure 6. Power Gain and Drain Efficiency versus
Output Power – 50 V
4000
20
19
18 40
30
20
10
DDRAIN EFFICIENCY (%)
Gps D
Gps, POWER GAIN (dB)
100 200 300 500
1030 MHz
50
60
70
1090 MHz
600 700 800 1000
15
21
Pout, OUTPUT POWER (WATTS) PEAK
Figure 7. Power Gain and Drain Efficiency versus
Output Power – 52 V
1200200
20
19
18 40
30
20
10
DDRAIN EFFICIENCY (%)
Gps D
Gps, POWER GAIN (dB)
400 600 800
1030 MHz
1090 MHz
50
60
70
17
16
900
17
16
10000
1030 MHz
1090 MHz
VDD =50Vdc,I
DQ(A+B) = 100 mA
Pulse Width = 128 sec, Duty Cycle = 10%
1030 MHz
1090 MHz
VDD =52Vdc,I
DQ(A+B) = 100 mA
Pulse Width = 128 sec, Duty Cycle = 10%
8
RF Device Data
NXP Semiconductors
AFV10700H AFV10700HS AFV10700GS
1030–1090 MHz REFERENCE CIRCUIT
Zo=5
Zsource
Zload
f = 1090 MHz
f = 1030 MHz f = 1030 MHz
f = 1090 MHz
f
MHz
Zsource
Zload
1030 2.3 – j1.7 0.91 – j0.76
1090 2.0 – j1.9 0.88 – j0.47
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Figure 8. Series Equivalent Source and Load Impedance – 1030–1090 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50
50
AFV10700H AFV10700HS AFV10700GS
9
RF Device Data
NXP Semiconductors
1030 MHz NARROWBAND PRODUCTION TEST FIXTURE – 4.05.0(10.2 cm 12.7 cm)
*C14, C15, C19, C20, C21, C22, C23 and C24 are mounted vertically.
Figure 9. AFV10700H Narrowband Test Circuit Component Layout – 1030 MHz
L1
C13
C12
C1 C25 C27
C26 C28
C18
L2
C17
C11
C8
B2 C4
R2
C6
C2
C9
C10
C3
B1
Coax1
C15*
C14*
C19*
C20*
C21*
C22*
C23*
C24*
C16
AFV10700H
Rev. 0
C5
C7
D89532
CUT OUT AREA
Coax2
Coax3
Coax4
R1
Table 8. AFV10700H Narrowband Test Circuit Component Designations and Values – 1030 MHz
Part Description Part Number Manufacturer
B1, B2 Short RF Bead 2743019447 Fair--Rite
C1, C2 22 F, 35 V Tantalum Capacitor T491X226K035AT Kemet
C3, C4 2.2 F Chip Capacitor C1825C225J5RAC Kemet
C5, C6 0.1 F Chip Capacitor CDR33BX104AKWS AVX
C7, C8, C19, C20, C21, C22, C23, C24 43 pF Chip Capacitor ATC100B430JT500XT ATC
C9, C10 3.3 pF Chip Capacitor ATC100B3R3CT500XT ATC
C11 0.7 pF Chip Capacitor ATC100B0R7BT500XT ATC
C12, C13 36 pF Chip Capacitor ATC100B360JT500XT ATC
C14, C15 5.1 pF Chip Capacitor ATC100B5R1CT500XT ATC
C16 5.6 pF Chip Capacitor ATC100B5R6CT500XT ATC
C17, C18 0.01 F Chip Capacitor C1825C103K1GACTU Kemet
C25, C26, C27, C28 470 F, 63 V Electrolytic Capacitor MCGPR63V477M13X26--RH Multicomp
Coax1, Coax2, Coax3, Coax4 35  Semi Rigid Coax 1.98Shield Length HSF--141--35--C Hongsen Cable
L1, L2 12 nH Inductor, 3 Turns GA3094--ALC Coilcraft
R1, R2 5.6  1/4 W Chip Resistor CRCW12065R60FKEA Vishay
PCB Arlon, AD255A, 0.03,r=2.55 D89532 MTL
10
RF Device Data
NXP Semiconductors
AFV10700H AFV10700HS AFV10700GS
TYPICAL CHARACTERISTICS – 1030 MHz, TC=25_C
PRODUCTION TEST FIXTURE
100 mA
500 mA
IDQ(A+B) = 1000 mA
VDD = 50 Vdc, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
Pout, OUTPUT POWER (WATTS) PEAK
Figure 10. Power Gain and Drain Efficiency
versus Output Power
50 100
21.0
80
70
60
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
D
18.0
300
Gps
20.0
20.5
19.0
19.5
18.5
90
50
40
30
10
50 100
Pout, OUTPUT POWER (WATTS) PEAK
Figure 11. Power Gain versus Output Power and
Quiescent Drain Current
Gps, POWER GAIN (dB)
22
20
21
18
19
17
100
Pout, OUTPUT POWER (WATTS) PEAK
Figure 12. Power Gain versus Output Power
and Drain Voltage
Gps, POWER GAIN (dB)
500
VDD =30V
24
22
20
18
16
35 V35 V
40 V
45 V
50 V
Pin, INPUT POWER (dBm) PEAK
Figure 13. Output Power versus Input Power
Pout, OUTPUT POWER (WATTS) PEAK
TC= –55_C25_C
0
200
400
600
800
30 32 34 36 38 40 42 44
25_C
85_C
24
0 200
60
50
Pout, OUTPUT POWER (WATTS) PEAK
Figure 14. Power Gain and Drain Efficiency versus
Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
D
TC= –55_C40
22
20
18
70
30
20
10
Gps
16
14
12
TC=25_C
17.0
200
1000
1200
25_C
85_C
–55_C
200
400 600 800 1000 1200
500 1000
1000
VDD =50Vdc,I
DQ(A+B) = 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
P3dB
(W)
1030 740 883
f
(MHz)
P1dB
(W)
17.5
700 1000
20
500
14
12
10
IDQ(A+B) = 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
28
VDD =50Vdc,I
DQ(A+B) = 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
85_C
26 80
50
VDD =50Vdc,I
DQ(A+B) = 100 mA, f = 1030 MHz
Pulse Width = 128 sec, Duty Cycle = 10%
AFV10700H AFV10700HS AFV10700GS
11
RF Device Data
NXP Semiconductors
1030 MHz NARROWBAND PRODUCTION TEST FIXTURE
f
MHz
Zsource
Zload
1030 4.0 – j6.9 3.9 – j1.4
Zsource = Test circuit impedance as measured from
gate to gate, balanced configuration.
Zload = Test circuit impedance as measured
from drain to drain, balanced configuration.
Figure 15. Series Equivalent Source and Load Impedance – 1030 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
--
+
+
--
50
50
12
RF Device Data
NXP Semiconductors
AFV10700H AFV10700HS AFV10700GS
PACKAGE DIMENSIONS
AFV10700H AFV10700HS AFV10700GS
13
RF Device Data
NXP Semiconductors
14
RF Device Data
NXP Semiconductors
AFV10700H AFV10700HS AFV10700GS
AFV10700H AFV10700HS AFV10700GS
15
RF Device Data
NXP Semiconductors
16
RF Device Data
NXP Semiconductors
AFV10700H AFV10700HS AFV10700GS
AFV10700H AFV10700HS AFV10700GS
17
RF Device Data
NXP Semiconductors
18
RF Device Data
NXP Semiconductors
AFV10700H AFV10700HS AFV10700GS
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following resources to aid your design process.
Application Notes
AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
Electromigration MTTF Calculator
RF High Power Model
.s2p File
Development Tools
Printed Circuit Boards
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0May 2017 Initial release of data sheet
1Jan. 2018 Added part number AFV10700GS, p. 1
Production test fixture, Typical Characteristic graphs: clarified temperature condition, p. 10
Added NI--780GS--4L package isometric, p. 1, and Mechanical Outline, pp. 16–17
2Aug. 2019 Overview copy and device description: updated to reflect frequency band operation from 960–1215 MHz,
p. 1
Typical Performance table: added 960–1215 MHz performance data, p. 1
Table 6, 1030–1090 Component Layout Parts List: updated the part number and description for C16 and
R1,p.6
AFV10700H AFV10700HS AFV10700GS
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RF Device Data
NXP Semiconductors
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including without limitation consequential or incidental damages. “Typical” parameters
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parameters, including “typicals,” must be validated for each customer application by
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E2017–2019 NXP B.V.
Document Number: AFV10700H
Rev. 2, 08/2019