Ordering number : ENA2212 WPB4001 N-Channel Power MOSFET http://onsemi.com 500V, 26A, 0.26, TO-3P-3L Features * * * ON-resistance RDS(on)=0.2 (typ.) Input capacitance Ciss=2250pF (typ.) 10V Drive TO-3P-3L Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Symbol Conditions Ratings VDSS VGSS Drain Current (Pulse) ID IDP Source to Drain Diode Forward Current (DC) ISD Source to Drain Diode Forward Current (Pulse) ISDP Unit 500 PW10s, duty cycle1% PW10s, duty cycle1% V 30 V 26 A 90 A 26 A 90 A 2.5 W Allowable Power Dissipation PD 220 W Channel Temperature Tch 150 C Tc=25C Storage Temperature Tstg --55 to +150 C Avalanche Energy (Single Pulse) *1 EAS 543 mJ Avalanche Current *2 IAV 14 A Note : *1 VDD=50V, L=5mH, IAV=14A (Fig.1) *2 L5mH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Electrical Characteristics at Ta=25C Parameter Symbol Conditions Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=10mA, VGS=0V VDS=400V, VGS=0V Gate to Source Leakage Current IGSS VGS=30V, VDS=0V Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | VDS=10V, ID=1mA VDS=10V, ID=13A Static Drain to Source On-State Resistance RDS(on) ID=13A, VGS=10V Input Capacitance Ciss Ratings min typ Unit max 500 V 3 7.5 100 A 100 nA 5 15.5 0.20 V S 0.26 2250 pF Output Capacitance Coss 450 pF Reverse Transfer Capacitance Crss 90 pF Turn-ON Delay Time td(on) 44 ns Rise Time tr 156 ns Turn-OFF Delay Time td(off) 224 ns Fall Time tf 94 ns Total Gate Charge Qg 87 nC 15.2 nC VDS=30V, f=1MHz See Fig.2 Gate to Source Charge Qgs Gate to Drain "Miller" Charge Qgd Diode Forward Voltage VSD IS=26A, VGS=0V 1.1 Reverse Recovery Time trr Qrr See Fig.3 115 ns ISD=26A, VGS=0V, di/dt=100A/s 340 nC Reverse Recovery Charge VDS=200V, VGS=10V, ID=26A 50 nC 1.5 V ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2013 September, 2013 91813 TKIM TC-00002976 No. A2212-1/5 WPB4001 ID -- VDS 80 Tc=25C 50 8V 40 30 20 30 20 25 0 2 Static Drain to Source On-State Resistance, RDS(on) -- 0.7 0.6 0.5 0.4 Tc=75C 0.3 25C 0.2 --25C 0.1 8 9 7 C 5 = Tc 3 --2 C 75 2 1.0 7 5 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A SW Time -- ID 1K VG 0.2 0.1 --25 0 25 50 1.0 7 5 3 2 0.1 7 5 3 2 0 0.2 0.4 0.6 tf Ciss, Coss, Crss -- pF 7 td(on) 5 0.8 1.0 1.2 Ciss, Coss, Crss -- VDS 1.4 IT17186 f=1MHz 7 5 tr 150 IT17184 VGS=0V Single pulse 10K 2 100 125 IS -- VSD 3 3 100 Diode Forward Voltage, VSD -- V 5 td (off ) 75 10 7 5 3 2 0.01 5 7 100 IT17250 VDD=200V VGS=10V 7 =1 S 0.3 3 2 Source Current, IS -- A C 25 5 =1 , ID V 0 7 5 2 10 16 IT17182 Case Temperature, Tc -- C VDS=10V 3 14 3A 0.4 IT17183 | yfs | -- ID 5 12 0.5 0 --50 10 Gate to Source Voltage, VGS -- V 10 RDS(on) -- Tc 5C 25C 7 8 Single pulse 0.8 6 6 0.6 ID=13A Single pulse 5 4 Gate to Source Voltage, VGS -- V IT17181 RDS(on) -- VGS 0.9 0 0 30 C 15 --25 10 1.0 Static Drain to Source On-State Resistance, RDS(on) -- 40 Tc= 7 5 0 Drain to Source Voltage, VDS -- V Forward Transfer Admittance, | yfs | -- S 75C 50 10 VGS=6V Switching Time, SW Time -- ns 25C 60 20 10 3 Tc= --25C 70 60 0 VDS=20V 80 Drain Current, ID -- A Drain Current, ID -- A 15V 10V 70 ID -- VGS(off) 90 Ciss 2 1K 7 5 Coss 3 2 Crss 100 5 3 2 0.1 3 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 IT17187 2 0 5 10 15 20 25 30 35 40 Drain to Source Voltage, VDS -- V 45 50 IT17188 No. A2212-2/5 WPB4001 VGS -- Qg 10 8 100 7 5 7 3 2 Drain Current, ID -- A Gate to Source Voltage, VGS -- V 9 6 5 4 1 3 2 0 0.1 20 30 40 50 60 70 80 Total Gate Charge, Qg -- nC 1.5 1.0 0.5 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C Avalanche Energy derating factor -- % 160 IT17191 EAS -- Ta 120 DC 0 ms 0m s 10 op 1m s s s era tio n Operation in this area is limited by RDS(on). Tc=25C Single pulse 1 2 3 5 7 10 2 3 5 7 100 2 Drain to Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.0 10 10 PD -- Tc 250 2.5 0 ID=26A IT17251 PD -- Ta 3.0 90 10 3 2 2 10 IDP=90A (PW10s) 10 7 5 1.0 7 5 3 0 ASO 2 VDS=200V ID=26A 3 5 7 1K IT17190 220 200 150 100 50 0 0 20 40 60 80 100 120 Case Temperature, Tc -- C 140 160 IT17192 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- C 150 175 IT17193 No. A2212-3/5 WPB4001 Package Dimensions WPB4001-1E TO-3P-3L CASE 340AF ISSUE O Unit : mm 1: Gate 2: Drain 3: Source Ordering & Package Information Marking Device Package Shipping memo WPB4001-1E TO-3P-3L SC-65, SOT-199, TO-247 30 pcs./tube Pb-Free Electrical Connection 2 PB4001 LOT No. 1 3 No. A2212-4/5 WPB4001 Fig.1 Unclamped Inductive Switching Test Circuit D 50 RG 10V 0V Fig.2 Switching Time Test Circuit 10V 0V L VIN G VDD=200V ID=13A RL=15.1 VIN S VDD 50 D PW=10s D.C.1% WPB4001 VOUT G S P.G WPB4001 50 Fig.3 Reverse Recovery Resistance Test Circuit WPB4001 D 500H G S VDD=50V Driver MOSFET Note on usage : Since the WPB4001 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A2212-5/5