91813 TKIM TC-00002976 No. A2212-1/5
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
September, 2013
WPB4001
N-Channel Power MOSFET
500V, 26A, 0.26Ω, TO-3P-3L
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Features
• ON-resistance RDS(on)=0.2Ω (typ.)
• Input capacitance Ciss=2250pF (typ.)
• 10V Drive
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain to Source Voltage VDSS 500 V
Gate to Source Voltage VGSS ±30 V
Drain Current (DC) ID26 A
Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 90 A
Source to Drain Diode Forward Current (DC)
ISD 26 A
Source to Drain Diode Forward Current (Pulse)
ISDP PW≤10μs, duty cycle≤1% 90 A
Allowable Power Dissipation PD2.5 W
Tc=25°C
220 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1EAS 543 mJ
Avalanche Current *2IAV 14 A
Note :
*1 VDD=50V, L=5mH, IAV=14A (Fig.1)
*2 L≤5mH, single pulse
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain to Source Breakdown Voltage V(BR)DSS ID=10mA, VGS=0V 500 V
Zero-Gate Voltage Drain Current IDSS V
DS=400V, VGS=0V 100 μA
Gate to Source Leakage Current IGSS VGS=±30V, VDS=0V ±100 nA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 35V
Forward T ransfer Admittance | yfs |VDS=10V, ID=13A7.5 15.5 S
Static Drain to Source On-State Resistance
RDS(on) ID=13A, VGS=10V 0.20 0.26 Ω
Input Capacitance Ciss VDS=30V, f=1MHz 2250 pF
Output Capacitance Coss 450 pF
Reverse Transfer Capacitance Crss 90 pF
Turn-ON Delay Time td(on)
See Fig.2
44 ns
Rise Time tr 156 ns
Turn-OFF Delay Time td(off) 224 ns
Fall Time tf94 ns
Total Gate Charge Qg VDS=200V, VGS=10V, ID=26A 87 nC
Gate to Source Charge Qgs 15.2 nC
Gate to Drain “Miller” Charge Qgd 50 nC
Diode Forward Voltage VSD IS=26A, VGS=0V 1.1
1.5
V
Reverse Recovery Time trr See Fig.3
ISD=26A, VGS=0V, di/dt=100A/μs115 ns
Reverse Recovery Charge Qrr 340 nC
Ordering number : ENA2212
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
TO-3P-3L