2SK2641-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 500 10 40 35 10 229 100 +150 -55 to +150 Unit V A A V A mJ W C C Drain(D) ew n for *1 L=4.20mH, Vcc=50V . de Gate(G) n sig Source(S) < *2 Tch=150C nd e mm Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current N Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge eco r ot Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Min. Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V VGS=0V VGS=35V VDS=0V ID=5A VGS=10V 500 3.5 Tch=25C Tch=125C ID=5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=10A VGS=10V 2.5 RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Typ. Max. 4.0 4.5 10 500 0.2 1.0 10 100 0.73 0.90 5.0 950 1450 180 270 80 120 25 40 70 110 70 110 45 70 10 1.1 450 5.5 1.65 Units V V A mA nA S pF ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 1.25 35.0 Units C/W C/W 1 2SK2641-01 FUJI POWER MOSFET Characteristics Power Dissipation PD=f(Tc) 120 Safe operating area ID=f(VDS):D=0.01,Tc=25C 100 t=0.01 s 1s 10 DC 10 s 100 s ID [A] PD [W] 80 1 60 10 40 1ms 0 t D= 20 10ms t T T 0 0 50 100 10 150 100ms -1 10 0 10 1 10 o Tc [ C] Typical output characteristics 3 ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C 25 VGS=20V 20 10 n sig ew n for 8V ID [A] 15 10 nd e mm 7V 10 . de 1 10V ID [A] 10 Typical transfer characteristic ID=f(VDS):80s Pulse test,Tch=25C 10 2 VDS [V] 0 -1 6.5V 5 o c e r 6V 0 0 5 10 t No 15 20 5.5V 5V 25 30 10 -2 35 0 1 2 3 4 5 6 7 8 9 10 VGS [V] VDS [V] Typical drain-source on-state resistance Typical forward transconductance RDS(on)=f(ID):80s Pulse test, Tch=25C gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C 5 VGS= 5V 5.5V 6V 6.5V 7V 4 RDS(on) [ ] 1 gfs [s] 10 10 0 3 2 8V 10V 20V 1 10 -1 10 -1 10 0 10 1 0 0 ID [A] 5 10 15 20 ID [A] http://store.iiic.cc/ 2 2SK2641-01 FUJI POWER MOSFET Drain-source on-state resistance RDS(on)=f(Tch):ID=5A,VGS=10V 3.0 6.0 2.5 5.0 2.0 4.0 Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS VGS(th) [V] RDS(on) [ ] max. max. 1.5 typ. min. 3.0 1.0 2.0 0.5 1.0 0.0 typ. 0.0 -50 0 50 100 -50 150 0 50 100 150 o Tch [ C] o Tch [ C] Typical capacitances C=f(VDS):VGS=0V,f=1MHz Typical gate charge characteristic VGS=f(Qg):ID=10A,Tch=25C 40 400 10n Vcc=400V 0V 10 c= 0V c V 25 V 0 40 350 300 30 20 200 n sig ew n for C [F] 25 250V VGS [V] Ciss nd e mm 15 150 Coss 100p 100 100V 0 0 20 40 ot N 60 80 o c e r 100 120 5 10p 0 140 10 -2 10 -1 10 Qg [nC] 0 10 1 10 2 VDS [V] Avalanche energy derating Forward characteristic of reverse of diode Eas=f(starting Tch):Vcc=50V,IAV=10A IF=f(VSD):80s Pulse test,VGS=0V 10 Crss 10 50 250 1 200 o Tch=25 C typ. 10 10 Eas [mJ] 150 IF [A] VDS [V] 1n 250 . de 35 0 100 -1 50 10 -2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 VSD [V] 50 100 150 o Starting Tch [C] http://store.iiic.cc/ 3 2SK2641-01 1 FUJI POWER MOSFET Transient thermal impedande Zthch=f(t) parameter:D=t/T 10 0 Zthch-c [K/W] 10 D=0.5 0.2 0.1 -1 10 0.05 0.02 t D= t T T -2 10 -5 10 0.01 0 -4 -3 10 10 -2 -1 10 10 0 10 1 10 t [s] de ew n for . n sig nd e mm t No o c e r http://store.iiic.cc/ 4