
10
E0C6008
●Oscillation Characteristics
Oscillation characteristics will vary according to different conditions (elements used, boad pattern). Use the following char-
acteristics are as reference values.
E0C6008 (OSC1 Crystal Oscillation)
Characteristic
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage
Permitted leak resistance
Symbol
Vsta
Vstp
C
D
∆f/∆V
∆f/∆IC
∆f/∆C
G
V
hho
R
leak
Unit
V
V
pF
ppm
ppm
ppm
V
MΩ
Max.
5
10
-3.5
Typ.
20
45
Min.
-1.8
-1.8
-10
35
200
Condition
t
sta≤5sec (V
SS
)
t
stp≤10sec (V
SS
)
Including the parasitic capacitance inside the chip
V
SS
=-1.8 to -3.5V
C
G
=5 to 25pF
(V
SS
)
Between OSC1 and V
DD
(Unless otherwise specified: V
DD
=0V, V
SS
=-3.0V, Crystal: C-002R (C
I
=35kΩ), C
G
=25pF, C
D
=built-in, Ta=25°C)
E0C60L08 (OSC1 Crystal Oscillation)
Characteristic
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage
Permitted leak resistance
∗1:
Symbol
Vsta
Vstp
C
D
∆f/∆V
∆f/∆IC
∆f/∆C
G
V
hho
R
leak
Unit
V
V
pF
ppm
ppm
ppm
V
MΩ
Max.
5
10
-1.7
Typ.
20
45
Min.
-1.1
-1.1
(-0.9)
∗1
-10
35
200
Parentheses indicate value for operation in heavy load protection mode.
Condition
t
sta≤5sec (V
SS
)
t
stp≤10sec (V
SS
)
Including the parasitic capacitance inside the chip
V
SS
=-1.1 (-0.9)
∗1
to -1.7V
C
G
=5 to 25pF
(V
SS
)
Between OSC1 and V
DD
(Unless otherwise specified: V
DD
=0V, V
SS
=-1.5V, Crystal: C-002R (C
I
=35kΩ), C
G
=25pF, C
D
=built-in, Ta=25°C)
E0C60A08 (OSC1 Crystal Oscillation)
Characteristic
Oscillation start voltage
Oscillation stop voltage
Built-in capacitance (drain)
Frequency/voltage deviation
Frequency/IC deviation
Frequency adjustment range
Harmonic oscillation start voltage
Permitted leak resistance
Symbol
Vsta
Vstp
C
D
∆f/∆V
∆f/∆IC
∆f/∆C
G
V
hho
R
leak
Unit
V
V
pF
ppm
ppm
ppm
V
MΩ
Max.
5
10
-3.5
Typ.
20
45
Min.
-2.2
-2.2
-10
35
200
Condition
t
sta≤5sec (V
SS
)
t
stp≤10sec (V
SS
)
Including the parasitic capacitance inside the chip
V
SS
=-2.2 to -3.5V
C
G
=5 to 25pF
(V
SS
)
Between OSC1 and V
DD
Unless otherwise specified: V
DD
=0V, V
SS
=-3.0V, Crystal: C-002R (C
I
=35kΩ), C
G
=25pF, C
D
=built-in, Ta=25°C
E0C60A08 (OSC3 CR Oscillation)
Characteristic
Oscillation frequency dispersion
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
Symbol
f
OSC3
Vsta
t
sta
Vstp
Unit
%
V
msec
V
Max.
30
3
Typ.
480kHz
Min.
-30
-2.2
-2.2
Condition
(V
SS
)
V
SS
=-2.2 to -3.5V
(V
SS
)
(Unless otherwise specified: V
DD
=0V, V
SS
=-3.0V, R
CR
=82kΩ, Ta=25°C)
E0C60A08 (OSC3 Ceramic Oscillation)
Characteristic
Oscillation start voltage
Oscillation start time
Oscillation stop voltage
Symbol
Vsta
t
sta
Vstp
Unit
V
msec
V
Max.
5
Typ.Min.
-2.2
-2.2
Condition
(V
SS
)
V
SS
=-2.2 to -3.5V
(V
SS
)
(Unless otherwise specified: V
DD
=0V, V
SS
=-3.0V, Ceramic oscillator: 500kHz, C
GC
=C
DC
=100pF, Ta=25°C)