MCMA265PD1600KB preliminary Thyristor Module VRRM = 2x 1600 V I TAV = 268 A VT = 0.95 V Phase leg Part number MCMA265PD1600KB 3 1 5 4 2 Features / Advantages: Applications: Package: Y1 Thyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded Al2O3-ceramic Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 4800 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: Copper internally DCB isolated Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130813b MCMA265PD1600KB preliminary Ratings Rectifier Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C max. 1700 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1600 V I R/D reverse current, drain current VT forward voltage drop min. typ. VR/D = 1600 V TVJ = 25C 300 A VR/D = 1600 V TVJ = 140C 30 mA I T = 300 A TVJ = 25C 1.05 V 1.40 V 0.95 V I T = 600 A TVJ = 125 C I T = 300 A I T = 600 A I TAV average forward current TC = 85C 180 sine I T(RMS) RMS forward current VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current It value for fusing 1.40 V T VJ = 140 C 268 A 421 A TVJ = 140 C 0.80 V W t = 10 ms; (50 Hz), sine TVJ = 45C 8.50 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 9.18 kA t = 10 ms; (50 Hz), sine TVJ = 140 C 7.23 kA 7.81 kA t = 8,3 ms; (60 Hz), sine VR = 0 V t = 10 ms; (50 Hz), sine TVJ = 45C 361.3 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 350.6 kAs TVJ = 140 C 261.0 kAs VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C PGM max. gate power dissipation t P = 30 s T C = 140 C 253.4 kAs 366 t P = 500 s average gate power dissipation K/W 720 t = 8,3 ms; (60 Hz), sine critical rate of rise of current K/W 0.04 junction capacitance (di/dt) cr m 0.16 TC = 25C CJ PGAV 0.75 TVJ = 140C; f = 50 Hz t P = 200 s; di G /dt = IG = repetitive, IT = 750 A pF 120 W 60 W 20 W 100 A/s 1 A/s; 1 A; VD = VDRM non-repet., IT = 268 A 500 A/s (dv/dt) cr critical rate of rise of voltage TVJ = 140C VGT gate trigger voltage VD = 6 V TVJ = 25 C TVJ = -40 C 3 V I GT gate trigger current VD = 6 V TVJ = 25 C 150 mA TVJ = -40 C 220 mA TVJ = 140 C 0.25 V 10 mA TVJ = 25 C 200 mA VD = VDRM 1000 V/s R GK = ; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = VDRM t p = 30 s 2 V IG = 0.45 A; di G /dt = 0.45 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 150 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time IG = 1 A; di G /dt = di/dt = 10 A/s; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1 A/s VR = 100 V; I T = 300 A; VD = VDRM TVJ = 140 C 200 s 50 V/s; t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20130813b MCMA265PD1600KB preliminary Package Ratings Y1 Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. max. 600 Unit A -40 125 C -40 140 C Weight typ. 750 MD mounting torque MT terminal torque d Spp/App VISOL t = 1 minute 7 11 13 Nm Nm 16.0 mm terminal to backside 16.0 mm 4800 V 4000 V t = 1 second isolation voltage 4.5 terminal to terminal creepage distance on surface | striking distance through air d Spb/Apb g 50/60 Hz, RMS; IISOL 1 mA Part number Prod. Index M C M A 265 PD 1600 KB Date Code Circuit yywwAA Part Number Lot.No: xxxxxx = = = = = = = = Module Thyristor (SCR) Thyristor (up to 1800V) Current Rating [A] Phase leg Reverse Voltage [V] Y1-CU Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31) leer (33), lfd.# (33-36) Ordering Standard Part Number MCMA265PD1600KB Equivalent Circuits for Simulation I V0 R0 Marking on Product MCMA265PD1600KB * on die level Delivery Mode Box Code No. 509202 T VJ = 140 C Thyristor V 0 max threshold voltage 0.8 V R 0 max slope resistance * 0.51 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20130813b MCMA265PD1600KB preliminary Outlines Y1 SW 13 M8 x 20 43 45 10 32 +0 -1,9 52 +0 -1,4 49 2 2.8 x 0.8 28.5 1 2 38 50 35 5 22.5 45 67 18 20 3 6.2 80 92 115 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 3751 Type ZY 180R (R = Right for pin pair 6/7) 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 1 5 4 2 Data according to IEC 60747and per semiconductor unless otherwise specified 20130813b MCMA265PD1600KB preliminary Thyristor 800 10 100 TVJ = 25C 700 1: IGT, TVJ = 130C 2: IGT, T4 = 25C 3: IGT, TVJ = -40C 300 200 1 limit [s] 4 1 VG tgd 400 [A] 5 2 10 500 IT, IF 6 3 600 [V] typ. 1 TVJ = 125C IGD, TVJ = 130C 100 TVJ = 25C 0 0.0 0.5 1.0 1.5 0.1 0.01 2.0 VT, VF [A] 0.10 1.00 0.1 10-3 10.00 10-1 IG [A] Fig. 1 Forward voltage drop 100 101 102 IG [A] Fig. 2 Gate trigger delay time 0.25 Fig. 3 Gate trigger characteristics RthJC for various conduction angles d: 0.20 ZthJC 0.15 [K/W] 30 60 120 180 DC 0.10 0.05 0.00 10-3 10-2 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W 10-2 10-1 100 d RthJC (K/W) DC 180 120 60 30 0.157 0.168 0.177 0.200 0.243 Constants for Zth calculation: i 1 2 3 4 101 Rthi (K/W) 0.0076 0.0406 0.0944 0.0147 ti (s) 0.0054 0.098 0.54 12 102 t [s] Fig. 4 Transient thermal impedance junction to case (per thyristor/diode) IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20130813b