GS9012
Vishay Semiconductors
for merly General Semiconductor
Document Number 88195 www.vishay.com
10-May-02 1
New Product
Small Signal Transistors (PNP)
Features
• PNP Silicon Epitaxial Planar Transistors for switching
and amplifier applications. Especially suitable for AF-
driver stages and low power output stages such as
por table radios in class-B push-pull operation.
• Complementar y to GS9013
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk-5K per container, 20K per box
E7/4K per Ammo mag., 20K per box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified
Parameter Symbol Value Unit
Collector-Base Voltage VCBO –40 V
Collector-Emitter Voltage VCEO –20 V
Emitter-Base Voltage VEBO –5V
Collector Current IC–500 mA
Power Dissipation at Tamb = 25°CP
tot 625(1) mW
Thermal Resistance Junction to Ambient Air RθJA 200(1) °C/W
Junction Temperature Tj150 °C
Storage Temperature Range TS–55 to +150 °C
Notes:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case
0.181 (4.6)
min. 0.492 (12.5) 0.181 (4.6)
0.142 (3.6)
0.098 (2.5)
max. ∅
0.022 (0.55)
Bottom
View
Dimensions in inches and (millimeters)
TO-226AA (TO-92)
GS9012
Vishay Semiconductors
for merly General Semiconductor
www.vishay.com Document Number 88195
210-May-02
Electrical Characteristics(TJ= 25°C unless otherwise noted)
Parameter Symbol Test Condition Min Typ Max Unit
Current Gain Group D VCE = –1V, IC= –50mA 64 —91
E78—112
DC Current Gain FhFE 96 —135 —
G 112 —166
H 144 —202
VCE = –1V, IC= –500mA 40 90 —
Collector-Emitter Breakdown Voltage V(BR)CEO IC= –1mA, IB= 0 –20 ——V
Collector-Base Breakdown Voltage V(BR)CBO IC= –100µA, IE= 0 –40 ——V
Emitter-Base Breakdown Voltage V(BR)EBO IE= –100µA, IC= 0 –5——V
Collector Cut-off Current ICBO VCB = –25V, IE= 0 ——–100 nA
Emitter Cut-off Current IEBO VEB = –3V, IC= 0 ——–100 nA
Collector-Emitter Saturation Voltage VCE(sat) IC= –500mA, IB= –50mA —–0.18 –0.6 V
Base-Emitter Saturation Voltage VBE(sat) IC= –500mA, IB= –50mA —–0.95 –1.2 V
Base-Emitter ON Voltage VBE(on) VCE = –1V, IC = –10mA –0.6 –0.67 –0.7 V
