GS9012 Vishay Semiconductors New Product formerly General Semiconductor Small Signal Transistors (PNP) TO-226AA (TO-92) 0.142 (3.6) min. 0.492 (12.5) 0.181 (4.6) 0.181 (4.6) Features * PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AFdriver stages and low power output stages such as portable radios in class-B push-pull operation. * Complementary to GS9013 Mechanical Data Case: TO-92 Plastic Package Weight: approx. 0.18g Packaging Codes/Options: E6/Bulk-5K per container, 20K per box E7/4K per Ammo mag., 20K per box max. 0.022 (0.55) 0.098 (2.5) Bottom View Dimensions in inches and (millimeters) Maximum Ratings & Thermal Characteristics Parameter Ratings at 25C ambient temperature unless otherwise specified Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V IC -500 mA 625 (1) mW 200 (1) C/W Collector Current Power Dissipation at Tamb = 25C Thermal Resistance Junction to Ambient Air Ptot RJA Junction Temperature Tj 150 C Storage Temperature Range TS -55 to +150 C Notes: (1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case Document Number 88195 10-May-02 www.vishay.com 1 GS9012 Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T Parameter DC Current Gain J = 25C unless otherwise noted) Symbol Current Gain Group D E F G H Test Condition Min Typ Max VCE = -1V, IC = -50mA 64 78 96 112 144 -- -- -- -- -- 91 112 135 166 202 VCE = -1V, IC = -500mA 40 90 -- hFE Unit -- Collector-Emitter Breakdown Voltage V(BR)CEO IC = -1mA, IB = 0 -20 -- -- V Collector-Base Breakdown Voltage V(BR)CBO IC = -100A, IE = 0 -40 -- -- V Emitter-Base Breakdown Voltage V(BR)EBO IE = -100A, IC = 0 -5 -- -- V Collector Cut-off Current ICBO VCB = -25V, IE = 0 -- -- -100 nA Emitter Cut-off Current IEBO VEB = -3V, IC = 0 -- -- -100 nA Collector-Emitter Saturation Voltage VCE(sat) IC = -500mA, IB = -50mA -- -0.18 -0.6 V Base-Emitter Saturation Voltage VBE(sat) IC = -500mA, IB = -50mA -- -0.95 -1.2 V Base-Emitter ON Voltage VBE(on) VCE = -1V, IC = -10mA -0.6 -0.67 -0.7 V www.vishay.com 2 Document Number 88195 10-May-02