NPN General Purpose Amplifier
BSS64
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
This device is designed for general purpose high voltage amplifiers
and gas discharge display driving. Sourced from Process 16.
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 80 V
VCBO Collector-Base Voltage 120 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Characteristic Max Units
*BSS64
PDTotal Device Dissipati on
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junction to Ambient 357 °C/W
C
E
B
SOT-23
Mark: U3
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
BSS64
3
NPN General Purpose Amplifier
(continued)
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 4.0 m A, IB = 0 80 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100
µ
A, IE = 0 120 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 100
µ
A, IC = 0 5.0 V
ICBO Collector-Cutoff Current VCB = 90 V, IE = 0
VCB = 90 V, IE = 0, TA = 150°C0.1
50
µ
A
µ
A
IEBO Emi t t er-Cutoff Current VEB = 5.0 V, IC = 0 200 nA
ON CHARACTERISTICS
hFE DC Current Gain IC = 10 mA, VCE = 1.0 V 20
VCE(sat)Collector-Emitter Saturation Voltage IC = 4.0 mA, I B = 400
µ
A
IC = 50 mA, IB = 15 mA 0.15
0.2 V
V
VBE(sat)Base-Emitter Saturation Voltage IC = 4.0 mA, I B = 400
µ
A1.2 V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Ba ndwidth Product IC = 4.0 mA, VCE = 10,
f = 35 MHz 60 MHz
Cob Output Ca pacita nce VCB = 10 V, f = 1.0 MHz 5.0 pF
Spice Model
NPN (Is=2.51 1f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m
Vtf=5 Xtf=8 Rb=10)
Typical Characteristics
BSS64
Typic al P uls ed Curre nt G ain
vs Collector Current
0.1 0.2 0.5 1 2 5 10 20 50 100
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
h - TYPICA L PU LSED CU R RENT GAIN
C
FE
125 ° C
25 °C
- 40 ° C
V = 5V
CE
C o ll ecto r -Emitter Satur ati o n
Vo ltag e vs C o ll ector Cu r rent
110100200
0
0.1
0.2
0.3
0.4
0.5
I - COLLEC TOR C UR RENT (m A)
V - COLLECTOR EMITTE R VOLTAGE (V)
C
CESAT
25 °C
- 40 °C
125 °C
β= 10
Typical Characteristics
C o l l ecto r-E m itte r B r ea k down
Voltage with Resistance
Between E mitter- Base
0.1 1 10 100 1000
160
180
200
220
240
260
RESISTAN C E (k )
BV - BREAKDOWN VOLTAGE (V)
Ω
CER
I = 1.0 mA
C
Input and Output Capacitance
vs Reverse Voltage
0.1 1 10 100
0
5
10
15
20
25
30
V - CO LLECTOR VOLTAGE (V)
CAPACI TANCE (pF)
C
f = 1.0 MHz
CE
C
cb
ib
Smal l Signal C urre nt Ga in
vs Co llect or Current
11050
0
4
8
12
16
I - COLLECTOR CURRENT (mA)
h - SMALL SI GN AL C U RRE NT GAIN
C
FE
FR E G = 20 M Hz
V = 10V
CE
Collector -Cutoff Current
vs. A mb ient Temp er atu re
25 50 75 100 125
1
10
50
T - A MBIENT TEMPERATUR E ( C)
I - C OLLECTOR CU RR ENT (nA)
A
CBO
°
V = 100V
CB
B ase-Emitter Saturati on
Vo lt ag e vs Co llector Cur rent
110100200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EM ITTER VOLTAGE (V)
C
BESAT
β= 10
25 °C
- 40 °C
125 °C
Base Emitter ON Vol tage vs
Collector Curre nt
0.1 1 10 100 200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BEON
V = 5V
CE
25 °C
- 40 °C
125 °C
BSS64
NPN General Purpose Amplifier
(continued)
3
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
SOT-23
BSS64
NPN General Purpose Amplifier
(continued)
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be reasonably expected to cause the failure of the life
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Definition of Terms
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Advance Information
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Obsolete
This datasheet contains the design specifications for
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any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
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This datasheet contains final specifications. Fairchild
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