DA112 DA115 DA119 DAN202C DAP202K DAN212C DA113. DA116 DA120 DAP202C DAN202U)3 DAN212K DA114. DA118 DA121 DAN202K DAP202U) DAN222 DAP222 Diode, array, high-speed switching, surface mount In these single packages, there are one or Dimensions (Units : mm) two diodes as shown in the circuit , DA116, DA118, DA119, DAN202K, DAP202K, diagrams. 2.9402 DAN212K (SMD3) Features 14855 available in the following 3-pin B0.1 packages: [ ola SSD3 (SST, US/European i SOT-23) (similar to SC-59) a SMD3 (SMD, SC-59, Japanese | fos Sa SOT-23) each lead has the same dimensions UMD3 (UMD, SC-90, SOT-323) | EMD3 (EMD, SC-90) 1.0 mod op et 1 * products are marked as follows: | O~0.1 ~~ oO orssess | a on Ql Applicati DA112 = AZ DAN202C = N i fads DA113 = AY DAP202C = P SET | DA114 = AV DAN202K = N DA112, DAt3, DA114, DA115, DAN202U, DA115 = AU DAP202K =P DAP202U (UMD3) DA116 = AZ DAN202U = N pearl DA118 = AY DAP202U = P al DA119 = AU DAN212C = N DA120 = AZ DAN212K =AV ql 3 owt DA121 = AV DAN222 = N oo DAP222 = P HEE we anisa : suitable for automatic mounting on printed circuit board high switching speed (t,, = 1.5 ns typically) all diodes in the chip have similar characteristics ons ultra high speed switching 0.9 Min so fF) Eh: F--} I ! Fy Fy 2 aa Diodes 245DA112 - DA116, DA118 - DA121, DAN(P)202C(K)(U), DAN212C(K), DAN(P)222 Diode arrays DA120, DA121, DAN222, DAP222 (EMD3) 1.6+0,2 1.040.) 0.5 0.5 0.27 Bos fie? Bes fo vir [' 0.05 Equivalent circuits DAN202C, DAP202C, DAN212C (SSD3) ee _ 1 10M) (1 -E: . 2.4 S 02 ol < 1 02 1 2 1 2 of 62 3 3 3 3 3 3 DA115 DA112 DA113 DAN202C DAP202C DA114 DA119 DA116 DA118 DAN202K DAP202K DA121 DA120 DAN202U DAP202U DAN212C DAN222 DAP222 DAP212K Absolute maximum ratings (T, = 25C) (Sheet 1 of 2) Peak DC Peak Mean Surge Power /|Junction| Storage Part no. | reverse | reverse forward | rectifying] current |dissipation| temp. temp. Type " | voltage | voltage | current | current | (1us) (Total) yp Vam(V) | Va (V) | Ie(mA) | Io (MA) |Isurge(A)] Pa (mW) | 7) (C) | Tetg (C) DA112 80 80 300 100 4 200 150 -55~+150) P DA113 80 80 300 100 0.5 200 150 55 ~ +150 P DA114 80 80 300 100 4 200 150 -55~+I150| N DA115 80 80 300 100 4 200 150 -55~+150} N DA116 80 80 300 100 4 200 150 ~55~+150| P DA118 80 80 300 100 4 200 150 -55~+150} P DA119 80 80 300 100 4 200 150 55~+150} N DA120 80 80 300 100 4 150 150 -55~+150| P DA121 80 80 300 100 4 [50 150 -55~+150) N DAN202C 80 80 300 100 4 150 150 -55~+150] N DAN202K 80 80 300 100 4 150 150 55~+150] N DAP202C 80 80 300 100 4 150 150 -55~+150} P DAP202K 80 80 300 100 4 150 150 -55~+150| P 246 Roum DiodesDiode arrays DA112 - DA116, DA118 - DA121, DAN(P)202C(K)(U), DAN212C(K), DAN(P)222 Absolute maximum ratings (T, = 25C) (Sheet 2 of 2) Peak DC Peak Mean Surge Power |Junction| Storage Part no. | Teverse | reverse forward |rectifying| current |dissipation| temp. temp. Type voltage | voltage | current | current | (1s) (Total) Vrm (V) | VR () | te (mA) | lo (MA) [Isurge(A)} Pa(mW) | TT) (CC) | Tstg PC) DAN202U 80 80 300 100 4 150 150 -55~+150| N DAP202U 80 80 300 100 4 150 150 -55~+150| P DAN212C 80 80 300 100 4 150 150 -55~+150) N DAN212K 80 80 300 100 4 150 150 55~+150| N DAN222 80 80 300 100 4 150 150 55~+150} N DAP222 80 80 300 100 4 150 150 -55~+150] P Electrical characteristics (unless otherwise noted, T, = 25C) Forme | Revesee | Capacitance Between | Reverse recovery ime Part no. Ve(V)| le |Inp(uA)| Va_ |Cr(PF)} Va f |tr(nS)) Vp IF Ref Max | (mA) | Max (V) max. (Vv) | (MHz) | Max (V) (mA) DA112 1.2 100 0.1 70 3.5 6 l 4 6 5 Figure 8 DA113 1.2 100 0.1 70 3.5 6 Ll 4 6 5 Figure 8 DA114 1.2 100 0.1 70 3.5 6 l 4 6 5 Figure 8 DA115 1,2 100 0.1 70 3.5 6 1 4 6 5 Figure 8 DA116 1.2 100 0.1 70 3.5 6 1 4 6 5 Figure 8 DA118 1.2 100 0.1 70 3.5 6 1 4 6 5 Figure 8 DA119 1.2 100 0.1 70 3.5 6 1 4 6 5 Figure 8 DA120 1.2 100 0.1 70 3.5 6 1 4 6 5 Figure 8 DA121 1.2 100 0.1 70 3.5 6 l 4 6 5 Figure 8 DAN202C| 1.2 100 0.1 70 3.5 6 1 4 6 5 Figure 8 DAN202K|_ 1.2 100 0.1 70 3.5 6 1 4 6 5 Figure 8 DAP202C| 1.2 100 0.1 70 3.5 6 I 4 6 5 Figure 8 DAP202K] 1.2 100 0.1 70 3.5 6 1 4 6 5 Figure 8 DAN202U| 1.2 100 0.1 70 3.5 6 1 4 6 5 Figure 8 DAP202U | 1.2 100 0.1 70 3.5 6 1 4 6 5 Figure 8 DAN212C] 1.2 100 0.1 70 3.5 6 I 4 6 5 Figure 8 DAN212K| 1.2 100 0.1 70 3.5 6 1 4 6 5 Figure 8 DAN222 1.2 100 0.1 70 3.5 6 I 4 6 5 Figure 8 DAP222 1.2 100 0.1 70 3.5 6 1 4 6 5 Figure 8 Diodes ROAM 247DA112 - DA116, DA118 - DA121, DAN(P)202C(K)(U), DAN212C(K), DAN(P)222 Diode arrays Electrical characteristic curves 125 TT T g ~ 100 . 3 a 7 N | z 6 ! - << a 50}- EX} 3 3 : c S 25;- 4 | | 0 2 80 75 100 125 150 AMBIENT TEMPERATURE : Ta (C) Figure 1 1.000 @ 100 = rt z ud Cc 5 3 10 Ww yD ec uJ a O4 rc 0.01 0 10 20 30 40 50 REVERSE VOLTAGE : Vr (V) Figure 3 1 @1 = E Zz 1 Ww c rc => oO w 10 a uJ > WW a 01 0.01 0 10 20 30 40 50 REVERSE VOLTAGE : Va [V} Figure 5 tle imAi 05 FORWARD CURRENT 02 0.1 6 02 0. 08 10 FORWARD VOLTAGE : Ve (Vv) Figure 2 mA: tle FORWARD CURRENT 02 0.1 0 02 04 06 08 10 12 14 FORWARD VOLTAGE : Ve (Vv) Figure 4 16 (pF 0 Qo 2 4 6 CAPACITANCE BETWEEN TERMINALS Cy nN REVERSE VOLTAGE : Vk {V) Figure 6 248 DiodesDiode arrays DA112 - DA116, DA118 - DA121, DAN(P)202C(K)(U), DAN212C(K), DAN(P)222 10 0.01 WF Diode under test Vea 6Vv | \ @ 9 I & 4 Pulse generator 5Q ampling w 7 output 50 2 50.42 | oscilloscope 2 F 6 > wb 8 3 Impulse z* oe = 3 Test circuit for d measuring reverse s ? recovery time (t,,) c i 0 1 2 3 4 5 6 7 B Y 10 FORWARD CURRENT : Ip (mA Figure 7 Figure 8 Diodes ROAM 249