REVISIONS DOC. NO. SPC-FOO5 * Effective: 7/8/02 * DCP No: 1398 ALL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED i ti mp WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC DCP #| REV DESCRIPTION DRAWN| DATE |CHECKD| DATE |APPRVD]} DATE i Iu < - > TECHNOLOGY. 1447 | A RELEASED HO | 5/19/03 | JWM | 5/20/03 | DJC | 5/20/03 SPCFO05.DWG 1885 | B UPDATE TO ROHS COMPLIANT EQ | 02/04/06} HO | 2/6/06 | HO | 2/6/06 Description: A silicon PNP Darlington transistors in a TO3 type case designed for general-purpose amplifier and lowfrequency applications. Features: High DC Current Gain PNP RoHS CollectorEmitter Sustaining Voltage: VeEo(sus) = 100V Min @ 100mA 3 Collector Compliant Monolithic Construction with Built-in BaseEmitter Shunt Resistors Absolute Maximum Ratings: 2 Base CollectorEmitter Voltage, Vog9 = 100V CollectorBase Voltage, Veg = 100V EmitterBase Voltage, Veg = 5V 1 Emitter Collector Current, I. continuous = 12A Electrical Characteristics: (Ty, = +25C unless otherwise specified) eak = Base Current, Ig = 200mA [Parameter [Symbol [Test Conditions [Min |Max [Unit | Total Power Dissipation ope. OBST PC OFF Characteristics erate above = 0. - _, V _ _ _ Operating Junction Temperature Range, T) = 65 to +200C CollectorEmitter Sustaining Voltage CEO(sus) [Ig = 100mA, Ip = 0, Note 1 100 Vv Storage Temperature Range, Tot = 65 to +200C Collector CutOff Current Iceo Vee = SOV, Ik = O - 1 mA Thermal Resistance, JunctiontoCase, Rio = 1.17C/W lorx Vee = 100V, Varro) = 1-5V - |o.5 |maA B Vor = 100V, Varco = TOV) Te = +150T|_ [5 mA { Emitter CutOff Current Igo Vee = SV, Ip = O - (2 mA | Cc } ON Characteristics (Note 1) DIM | MIN | MAX | oc f DC Current Gain hee Vor = 3V, Ip = 6A 750 ]18000| A | 38.75| 39.96 D G Vee = 3V, Ip = 12A 100 |- - B | 19.28] 22.23 T= CollectorEmitter Saturation Voltage Voe(sat) IL = 6A, Ip = 24mA - |2 Vv c | 7.96 | 9.28 lkKF Io = 12A, Ip = 120mA - [3s |v D 11.18] 12.19 r BaseEmitter Saturation Voltage VeE(sot) Ig = 12A, Ip = 120mA - 4 Vv E 25.20] 26.67 R=J 20 BaseEmitter ON Voltage Vise(on) Vere = SV, Ip = 6A - 2.8 Vv F 0.92 | 1.09 t @ K E Dynamic Characteristics G 1.381 1.62 1 SmallSignal Current Gain hie Vee = SV, Ig = SA, f = 1kHz 300 | - - - Magnitude of Common Emmiter [hel Ver = 3V, Ip = 5A, f = MHz 4 |- MHz H_| 29.90] 30.40 __ SmallSignal ShortCircuit | 16.64 | 17.50 . I Forward Current Transfer Ratio Pin 1 = Base - J | 3.88 | 4.36 Pin 2 = Emitter H - Output Capacitance Cob Von = 10V, Ip = O, f = O.1MHz |500 |pF K | 10.67) 11.18 . Collector (Case) A Note 1. Pulse test: Pulse Width = 300ys, Duty Cycle = 2%. DISCLAIMER: TOLERANCES: DRAWN BY: DATE: DRAWING TITLE: ALL STATEMENTS AND TECHNICAL INFORMATION CONTAINED HISHAM ODISH 5/19/03 Transistor, Bipolar, TO-3, PNP, 12 A, 100 V, 150 W HEREIN ARE BASED UPON INFORMATION AND/OR TESTS WE UNLESS OTHERWISE BELIEVE TO BE ACCURATE AND RELIABLE. SINCE SPECIFIED, CHECKED BY: DATE: SIZE] DWG. NO. ELECTRONIC FILE REV CONDITIONS OF USE ARE BEYOND OUR CONTROL, THE USER SHALL DETERMINE THE SUITABILITY OF THE PRODUCT Oe PE RENCE JEFF MCVICKER 5/20/03| A 2N6052 55C0735.DWG B FOR THE INTENDED USE AND ASSUME ALL RISK AND . DATE: LIABILITY WHATSOEVER IN CONNECTION THEREWITH. PURPOSES ONLY. APPROVED BY: : } a DANIEL CAREY 5/20/03 | SCALE: NTS U.O.M.: Millimeters SHEET: 1 OF 1