FQA140N10 N-Channel QFET(R) MOSFET 100 V, 140 A, 10 m Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features * 140 A, 100 V, RDS(on) = 10 m (Max.) @ VGS = 10 V, ID = 70 A * Low Gate Charge (Typ. 0 nC) * Low Crss (Typ. 470 pF) * 100% Avalanche Tested * 17 D G G D TO-3PN S Absolute Maximum Ratings Symbol VDSS ID S TC = 25C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) FQA140N10 100 Unit V 140 A 99 A (Note 1) 560 A 25 V 1500 mJ IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 140 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) (Note 1) 37.5 6.5 375 2.5 -55 to +175 mJ V/ns W W/C C 300 C dv/dt PD TJ, TSTG TL - Pulsed (Note 3) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds. Thermal Characteristics FQA140N10 + Thermal Resistance, Junction-to-Case, Max. 0.4 6? + Thermal Resistance, Junction-to-Ambient, Max. 40 6? (c)2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C2 1 www.fairchildsemi.com FQA140N10 -- N-Channel QFET(R) MOSFET June 2014 Part Number FQA140N10 Top Mark FQA140N10 Electrical Characteristics Symbol Package TO-3PN Packing Method Tube Reel Size Tape Width N/A N/A Quantity 30 units TC = 25C unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 100 -- -- V -- V/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.08 IDSS Zero Gate Voltage Drain Current VDS = 80 V, VGS = 0 V -- -- 1 A VDS = 64 V, TC = 150C -- -- 10 A IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 70 A -- 0.008 0.01 gFS Forward Transconductance VDS = 30 V, ID = 70 A -- 80 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 6100 7900 pF -- 2000 2600 pF -- 420 550 pF -- 75 160 ns -- 940 1890 ns -- 350 710 ns -- 360 730 ns -- 220 285 nC Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 40 V, ID = 140 A, RG = 25 (Note 4) VDS = 64 V, ID = 140 A, VGS = 10 V -- 39 -- nC (Note 4) -- 114 -- nC (Note 5) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 140 A ISM -- -- 560 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 140 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 140 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IS = 140 A, dIF / dt = 100 A/s -- 730 -- nC Notes: 1.Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 0.115 mH, IAS = 140 A, VDD = 25 V, RG = 25 , starting TJ = 25C. 3. ISD 140 A, di/dt 300 A/s, VDD BVDSS, starting TJ = 25C. 4. Essentially independent of operating temperature. 5. Continuous drain current calculated by maximum junction temperature : limited by package. (c)2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C2 2 www.fairchildsemi.com FQA140N10 -- N-Channel QFET(R) MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 2 10 2 10 ID , Drain Current [A] ID, Drain Current [A] Top : 175 1 10 25 0 -55 10 Notes : 1. VDS = 40V 2. 250 s Pulse Test Notes : 1. 250 s Pulse Test 2. TC = 25 1 10 -1 -1 0 10 10 1 10 10 2 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics IDR , Reverse Drain Current [A] RDS(ON) [m ], Drain-Source On-Resistance 30 25 VGS = 10V 20 VGS = 20V 15 10 5 2 10 1 10 0 10 175 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test Note : TJ = 25 -1 0 100 200 300 400 500 700 800 10 900 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 20000 16000 14000 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 18000 Capacitance [pF] 600 Coss VGS, Gate-Source Voltage [V] 0 Ciss 12000 Notes : 1. VGS = 0 V 2. f = 1 MHz 10000 8000 Crss 6000 4000 2000 0 -1 10 10 VDS = 50V VDS = 80V 8 6 4 2 Note : ID = 140 A 0 10 0 1 10 Figure 5. Capacitance Characteristics (c)2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C2 0 40 80 120 160 200 240 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQA140N10 -- N-Channel QFET(R) MOSFET Typical Characteristics (Continued) 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 0.5 Notes : 1. VGS = 10 V 2. ID = 70 A 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 150 Operation in This Area is Limited by R DS(on) 3 10 ID, Drain Current [A] ID, Drain Current [A] 120 10 s 100 s 2 10 10 ms DC 1 ms 1 10 0 Notes : 10 90 Limited by Package 60 30 o 1. TC = 25 C o 2. TJ = 175 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 Figure 9. Maximum Safe Operating Area ZJC(t), Thermal Response [oC/W] 75 100 125 150 175 TC, Case Temperature [] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 -1 N o te s : 1 . Z J C ( t) = 0 .4 /W M a x . 2 . D u ty F a c t o r , D = t 1 / t 2 3 . T J M - T C = P D M * Z J C ( t) 0 .2 0 .1 0 .0 5 PDM 0 .0 2 10 t1 0 .0 1 -2 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve (c)2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C2 4 www.fairchildsemi.com FQA140N10 -- N-Channel QFET(R) MOSFET Typical Characteristics 200nF 12V FQA140N10 -- N-Channel QFET(R) MOSFET VGS Same Type as DUT 50K Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on tf t off Figure 13. Resistive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp Time tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms (c)2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C2 5 www.fairchildsemi.com + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (c)2000 Fairchild Semiconductor Corporation FQA140N10 Rev. C2 6 www.fairchildsemi.com FQA140N10 -- N-Channel QFET(R) MOSFET DUT FQA140N10 -- N-Channel QFET(R) MOSFET Mechanical Dimensions Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 (c)2000 Fairchild Semiconductor Corporation FQA140N10 Rev. 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