Vishay Siliconix
DG506B, DG507B
Document Number: 65150
S10-0660-Rev. B, 22-Mar-10
www.vishay.com
1
Precision 16-Channel/Dual 8-Channel CMOS Analog Multiplexers
DESCRIPTION
The DG506B and DG507B are high performance analog
multiplexers. Their ultra-low switch charge injection, low
channel capacitance, and low leakage level allows them to
achieve superior switching performance. The DG506B is a
16-channel single-ended analog multiplexer designed to
connect one of sixteen inputs to a common output as
determined by a 4-bit binary address (A0, A1, A2, A3). The
DG507B is a dual 8-channel differential analog multiplexer
designed to connect one of eight differential inputs to a
common dual output as determined by its 3-bit binary
address (A0, A1, A2). Break-before-make switching action
protects against momentary crosstalk between adjacent
channels.
An on channel conducts current equally well in both
directions. In the off state each channel blocks voltages up to
the power supply rails. An enable (EN) function allows the
user to reset the multiplexer/demultiplexer to all switches off
for stacking several devices. All control inputs, addresses
(Ax) and enable (EN) are TTL compatible over the full
specified operating temperature range.
The DG506B and DG507B are fabricated on an enhanced
SG-II CMOS process that achieves improved performance
on: reduced charge injection, lower device leakage, and
minimized parasitic capacitance.
As the DG506, DG507 has a long history in the industry with
many suppliers offering copies, and in some cases improved
variations, with the best in class improvements, the Vishay
Siliconix new version of the DG506B, DG507B are the
superior alternatives to what is currently available.
Applications for the DG506B, DG507B include high speed
and high precision data acquisition, audio signal switching
and routing, ATE systems, and avionics. High performance
and low power dissipation make them ideal for battery
operated and remote instrumentation applications.
The DG506B and DG507B have the absolute maximum
voltage rating extended to 44 V. Additionally, single supply
operation is also allowed. An epitaxial layer prevents
latch-up.
The DG506B and DG507B are both available in 28-lead
SOIC and TSSOP package options with extended
temperature range of - 40 °C to + 125 °C.
For more information, refer to Vishay Siliconix DG506B,
DG507B evaluation board note.
FEATURES
• Operate with single or dual power supply
• V+ to V- analog signal swing range
• 44 V power supply maximum rating
• Extended operate temperature range:
- 40 °C to + 125 °C
• Low leakage typically < 3 pA
• Low charge injection - QINJ = 1 pC
• Low power - ISUPPLY: 5 µA
• TTL compatible logic
• > 250 mA latch up current per JESD78
• Available in SOIC28 and TSSOP28 packages
• Superior alternative to:
- ADG506A, DG506A, HI-506
- ADG507A, DG507A, HI-507
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21 definition
BENEFITS
• Reduced switching errors
• Reduced glitching
• Improved data throughput
• Reduced power consumption
• Increased ruggedness
• Wide supply ranges (± 5 V to ± 20 V)
APPLICATIONS
• Data acquisition systems
• Audio and video signal routing
• ATE systems
• Medical instrumentation
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Document Number: 65150
S10-0660-Rev. B, 22-Mar-10
Vishay Siliconix
DG506B, DG507B
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG506B
Dual-In-Line
SOIC and TSSOP
Top View
V+
S11
S10
S9
NC
A3
D
S2
S1
GND
A1
A2
NC
A0
EN
V-
NC S8
S16 S7
S15 S6
S14 S5
S13 S4
S12 S3
1
2
3
4
5
6
7
8
28
27
26
25
24
23
22
21
920
10 19
11
12
18
17
13 16
14 15
Decoders/Drivers
DG507B
Dual-In-Line
SOIC and TSSOP
Top View
V+
S3b
S2b
S1b
NC
NC
Da
S2a
S1a
GND
A1
A2
Db
A0
EN
V-
NC S8a
S8b S7a
S7b S6a
S6b S5a
S5b S4a
S4b S3a
1
2
3
4
5
6
7
8
28
27
26
25
24
23
22
21
920
10 19
11
12
18
17
13 16
14 15
Decoders/Drivers
T o
p
V iew
DG506B
PLCC
Decoders/Drivers
7
8
9
5
20
19
21
22
23
24
25
1 2 3 4
10
11
12 13 14 15 16 17 18
26 27 28
6
S
13
S
15
S
5
S
12 S
4
S
7
S
11
S
14 S
6
S
3
S
10 S
2
S
9 S
1
S GND
NC NC
NC
3
V+
2
D
1
V-
0
S EN
A
A
A
A
16
8
DG507B
PLCC
T op V iew
A
A
A
S
7b
S
5a
S
4b S
4a
S
7a
S
3b
S
6b S
6a
S
3a
S
5b
S
2b S
2a
S
1b S
1a
GND
NC NC
D NC
V+
D
V-
EN
S
2
1
0
S
8b
8a
b
a
Decoders/Drivers
7
8
9
5
20
19
21
22
23
24
25
1 2 3 4
10
11
12 13 14 15 16 17 18
26 27 28
6
Document Number: 65150
S10-0660-Rev. B, 22-Mar-10
www.vishay.com
3
Vishay Siliconix
DG506B, DG507B
Logic “0” = VIL ≤ 0.8 V
Logic “1” = VIH ≥ 2.4 V
X = Do not care
Notes:
a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 10.5 mW/°C above 70 °C.
d. Derate 10.2 mW/°C above 70 °C.
e. Derate 21.2 mW/°C above 70 °C.
TRUTH TABLE DG506B
A3 A
2 A
1 A
0 EN On Switch
X X X X 0 None
0 0 0 0 1 1
0 0 0 1 1 2
0 0 1 0 1 3
0 0 1 1 1 4
0 1 0 0 1 5
0 1 0 1 1 6
0 1 1 0 1 7
1 1 1 1 1 8
1 0 0 0 1 9
1 0 0 1 1 10
1 0 1 0 1 11
1 0 1 1 1 12
1 1 0 0 1 13
1 1 0 1 1 14
1 1 1 0 1 15
1 1 1 1 1 16
TRUTH TABLE DG507B
A2A1A0 EN On Switch
X X X 0 None
0 0 0 1 1
0 0 0 1 2
0 1 1 1 3
0 1 1 1 4
1 0 0 1 5
1001 6
1 111 7
1 1 1 1 8
ORDERING INFORMATION DG506B
Temp. Range Package Part Number
- 40 °C to 125 °C
28-Pin SOIC DG506BEW-T1-GE3
28-Pin TSSOP DG506BEQ-T1-GE3
28-Pin PLCC DG506BEN-T1-GE3
ORDERING INFORMATION DG507B
Temp. Range Package Part Number
- 40 °C to 125 °C
28-Pin SOIC DG507BEW-T1-GE3
28-Pin TSSOP DG507BEQ-T1-GE3
28-Pin PLCC DG507BEN-T1-GE3
ABSOLUTE MAXIMUM RATINGS
Parameter Limit Unit
Voltages Referenced to V- V+ 44
V
GND 25
Digital Inputsa, VS, VD
(V-) - 2 to (V+) + 2
or 20 mA, whichever occurs first
Current (Any terminal) 30 mA
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.) 100
Storage Temperature (EW, EQ, EN suffix) - 65 to 150 °C
Power Dissipation (Packages)b
28-Pin Wide Body SOICc840
mW
28-Pin TSSOPd817
28-Pin PLCCe1693
Thermal Resistance (θJ-A)b
28-Pin Wide Body SOICc95.3
°C/W
28-Pin TSSOPd97.9
28-Pin PLCCe47.3
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Document Number: 65150
S10-0660-Rev. B, 22-Mar-10
Vishay Siliconix
DG506B, DG507B
SPECIFICATIONS
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V (± 10 %)
VAX, VEN = 2.4 V, 0.8 VaTemp.b Typ.c
A Suffix
- 40 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.d Max.dMin.d Max.d
Analog Switch
Analog Signal RangeeVANALOG Full - 15 15 - 15 15 V
Drain-Source
On-Resistance RDS(on) VD = ± 10 V, IS = - 1 mA Room 170 300 300
ΩFull 400 400
RDS(on) Matching ΔRDS(on) VD = ± 10 V Room 10
Source Off Leakage Current IS(off)
VD = ± 10 V
VS = 10 V
VEN = 0 V
Room 0.005 - 1 1 - 1 1
nA
Full - 50 50 - 50 50
Drain Off Leakage Current ID(off)
DG506B Room 0.005 - 1 1 - 1 1
Full - 100 100 - 100 100
DG507B Room 0.005 - 1 1 - 1 1
Full - 50 50 - 50 50
Drain On Leakage Current ID(on)
VS = VD = 10 V
sequence each
switch on
DG506B Room 0.005 - 1 1 - 1 1
Full - 100 100 - 100 100
DG507B Room 0.005 - 1 1 - 1 1
Full - 50 50 - 50 50
Digital Control
Logic High Input Voltage VINH Full 2.4 2.4 V
Logic Low Input Voltage VINL Full 0.8 0.8
Logic High Input Current IIH VAX, VEN = 2.4 V Full - 1 1 - 1 1 µA
Logic Low Input Current IIL VAX, VEN = 0.8 V Full - 1 1 - 1 1
Logic Input CapacitanceeCin f = 1 MHz Room 5 pF
Dynamic Characteristics
Transition Time tTRANS
VS1 = + 10 V/- 10 V,
VS16 = - 10 V/+ 10 V,
RL = 1 MΩ, CL = 35 pF
see figure 2
Room 190 300 300
ns
Full 360 360
Break-Before-Make Interval tOPEN
VS1 = VS16 = 5.0 V, CL = 35 pF,
RL = 1 kΩ, see figure 4
Room 84 30 30
Full 10 10
Enable Turn-On Time tON(EN) VS1 = 5 V, VS2 to VS16 = 0 V,
RL = 1 kΩ, CL = 35 pF
see figure 3
Room 151 250 250
Full 310 310
Enable Turn-Off Time tOFF(EN)
Room 53 200 200
Full 220 220
Charge InjectioneQINJ
C
L
= 1 nF, R
GEN
= 0
Ω
, V
GEN
= 0 V
Full 1 pC
Off IsolationeOIRR
C
L
= 5 pF
, RL = 50 Ω,
f = 1 MHz
DG506B Room - 85
dB
DG507B - 84
CrosstalkeXTALK
C
L
= 5 pF
, RL = 50 Ω,
f = 1 MHz
DG506B Room - 85
DG507B - 84
- 3 dB BandwidtheBW RL = 50 ΩDG506B Room 114 MHz
DG507B 217
Total Harmonic DistortioneTHD RL = 10 kΩ, 5 Vrms Room 0.04 %
Source Off CapacitanceeCS(off)
f = 1 MHz
Room 3
pF
Drain Off CapacitanceeCD(off)
DG506B Room 31
DG507B Room 17
Drain On CapacitanceeCD(on)
DG506B Room 38
DG507B Room 24
Power Supply
Positive Supply Current I+ VAX, VEN = 0 V or 5 V
Room 0.005 0.1 0.1 mA
Full 0.1 0.1
Negative Supply Current I- Full - 1 - 1 µA
±
±
Document Number: 65150
S10-0660-Rev. B, 22-Mar-10
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Vishay Siliconix
DG506B, DG507B
SPECIFICATIONS Single Supply 12 V
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V (± 10 %)
VAX, VEN = 2.4 V, 0.8 VaTemp.b Typ.c
A Suffix
- 40 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.d Max.dMin.d Max.d
Analog Switch
Analog Signal RangeeVANALOG Full 0 12 0 12 V
On-Resistance RDS(on) VD = 10 V/0 V, IS = 1 mA
Room 270 450 450
ΩFull 650 650
RDS(on) Matching ΔRDS(on) Room 10
Switch Off Leakage Current
IS(off)
V+ = 12 V, V- = 0 V
VD = 0 V/10 V,
VS = 10 V/0 V
Room 0.005 - 1 1 - 1 1
nA
Full - 50 - 50 - 50 50
ID(off) DG506B Room 0.005 - 1 1 - 1 1
Full - 100 100 - 100 100
ID(off) DG507B Room 0.005 - 1 1 - 1 1
Full - 50 50 - 50 50
Channel On Leakage Current ID(on)
V+ = 12 V, V- = 0 V
VS = VD = 0 V/10 V
DG506B Room 0.005 - 1 1 - 1 1
Full - 100 100 - 100 100
DG507B Room 0.005 - 1 1 - 1 1
Full - 50 50 - 50 50
Digital Control
Logic High Input Voltage VINH Full 2.4 2.4 V
Logic Low Input Voltage VINL Full 0.8 0.8
Logic High Input Current IIH VAX, VEN = 2.4 V Full - 1 1 - 1 1 µA
Logic Low Input Current IIL VAX, VEN = 0.8 V Full - 1 1 - 1 1
Logic Input CapacitanceeCin f = 1 MHz Room 5 pF
Dynamic Characteristics
Transition Time tTRANS
VS1 = 10 V/0 V, VS16 = 0 V/10 V,
RL = 1 MΩ, CL = 35 pF, see figure 2
Room 228 380 380
ns
Full 450 450
Break-Before-Make Interval tOPEN
VS1 = VS16 = 5 V, CL = 35 pF,
RL = 1 kΩ, see figure 4
Room 115 40 40
Full 10 10
Enable Turn-On Time tON(EN) VS1 = 5 V, VS2 to VS16 = 0 V,
RL = 1 kΩ, CL = 35 pF
see figure 3
Room 197 300 300
Full 420 420
Enable Turn-Off Time tOFF(EN)
Room 46 200 200
Full 220 220
Charge InjectioneQINJ
C
L
= 1 nF, R
GEN
= 0
Ω
, V
GEN
= 0 V
Full 4 pC
Off IsolationeOIRR
C
L
= 5 pF
, RL = 50 Ω
f = 1 MHz
DG506B Room - 86
dB
DG507B - 84
CrosstalkeXTA L K
C
L
= 5 pF
, RL = 50 Ω
f = 1 MHz
DG506B Room - 85
DG507B - 84
- 3 dB BandwidtheBW RL = 50 ΩDG506B Room 104 MHz
DG507B 191
Total Harmonic DistortioneTHD RL = 10 kΩ, 5 VRMS,
f = 20 Hz to 20 kHz Room 0.23 %
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Document Number: 65150
S10-0660-Rev. B, 22-Mar-10
Vishay Siliconix
DG506B, DG507B
Notes:
a. VAX, VEN = input voltage perform proper function.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. ΔRDS(on) = RDS(on) max. - RDS(on) min.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SCHEMATIC DIAGRAM Typical Channel
Dynamic Characteristics
Source Off CapacitanceeCS(off)
f = 1 MHz Room
4
pF
Drain Off CapacitanceeCD(off)
DG506B 37
DG507B 20
Channel On CapacitanceeCD(on)
DG506B 43
DG507B 26
Power Supply
Power Supply Current I+ VAX, VEN = 0 V, or 5 V Room 0.005 0.1 0.1 mA
Full 0.1 0.1
SPECIFICATIONS Single Supply 12 V
Parameter Symbol
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V (± 10 %)
VAX, VEN = 2.4 V, 0.8 VaTemp.b Typ.c
A Suffix
- 40 °C to 125 °C
D Suffix
- 40 °C to 85 °C
Unit Min.d Max.dMin.d Max.d
Figure 1.
EN
A
0
S
1
D
S
n
Decode/
Drive
Level
Shift
V-
V
+
V-
V
RE F
A
X
GND V-
V-
V+
Document Number: 65150
S10-0660-Rev. B, 22-Mar-10
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Vishay Siliconix
DG506B, DG507B
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. VD and Dual Supply Voltage
On-Resistance vs. Analog Voltage
and Temperature
On-Resistance vs. Analog Voltage
and Temperature
0
50
100
150
200
250
300
350
400
450
500
- 20 - 15 - 10 - 5 0 5 10 15 20
RON - On-Resistance (Ω)
VD - Analog Voltage (V)
T = 25 °C
IS = 1 mA V+ = + 5.0 V
V- = - 5.0 V
V+ = + 10.8 V
V- = - 10.8 V
V+ = + 13.5 V
V- = - 13.5 V
V+ = + 15 V
V- = - 15 V
V+ = + 20 V
V- = - 20 V
RON - On-Resistance (Ω)
VD - Analog Voltage (V)
0
100
200
300
500
600
400
700
- 5 - 4 - 3 - 2 - 1 0 1 2 3 4 5
V+ = + 5.0 V, V- = - 5.0 V
IS = 1 mA
+ 125 °C
+ 85 °C
+ 25 °C
- 40 °C
RON - On-Resistance (Ω)
VD - Analog Voltage (V)
0
50
100
150
200
250
300
350
400
450
500
- 15 - 10 - 5 0 5 10 15
V+ = + 13.5 V, V- = - 13.5 V
IS = 1 mA + 125 °C
+ 85 °C
+ 25 °C
- 40 °C
On-Resistance vs. VD and Single Supply Voltage
On-Resistance vs. Analog Voltage
and Temperature
On-Resistance vs. Analog Voltage
and Temperature
RON - On-Resistance (Ω)
VD - Analog Voltage (V)
50
100
150
200
250
300
350
400
450
500
0246810 12 14 16 1820
T = 25 °C
IS = 1 mA V+ = 10.8 V
V+ = 12 V
V+ = 20 V
RON - On-Resistance (Ω)
VD - Analog Voltage (V)
0
50
100
150
200
250
300
350
400
450
500
- 15 - 10 - 5 0 5 10 15
V+ = + 10.8 V, V- = - 10.8 V
IS = 1 mA
+ 125 °C
+ 85 °C
+ 25 °C
- 40 °C
RON - On-Resistance (Ω)
VD - Analog Voltage (V)
0
50
100
150
200
250
300
350
400
450
500
- 15 - 10 - 5 0 5 10 15
V+ = + 15 V, V- = - 15 V
IS = 1 mA
+ 125 °C
+ 85 °C
+ 25 °C
- 40 °C
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Document Number: 65150
S10-0660-Rev. B, 22-Mar-10
Vishay Siliconix
DG506B, DG507B
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Analog Voltage
and Temperature
On-Resistance vs. Analog Voltage
and Temperature
Supply Current vs. Input Switching Frequency
RON - On-Resistance (Ω)
VD - Analog Voltage (V)
0
500
- 20 - 15 - 10 - 5 0 5 10 15 20
50
100
150
200
250
300
350
400
450
V+ = + 20 V, V- = - 20 V
IS = 1 mA + 125 °C
+ 85 °C
+ 25 °C
- 40 °C
RON - On-Resistance (Ω)
VD - Analog Voltage (V)
0
700
100
200
300
400
600
50
150
250
350
500
450
650
550
0123456789101112
V+ = + 12 V, V- = 0 V
IS = 1 mA
+ 125 °C
+ 85 °C
+ 25 °C
- 40 °C
0.0001
0.001
0.01
0.1
10 000
1000
100
10
1
10 100 1K 10K 100K 1M 10M
Supply Current (µA)
Input Switching Frequency (Hz)
V+ = + 15 V
V- = - 15 V
I+
I-
IGND
On-Resistance vs. Analog Voltage
and Temperature
On-Resistance vs. Analog Voltage
and Temperature
Leakage Current vs. Analog Voltage
RON - On-Resistance (Ω)
VD - Analog Voltage (V)
0
700
0123456789101112
50
150
250
100
200
300
350
450
550
400
500
600
650 V+ = + 10.8 V, V- = 0 V
IS = 1 mA
+ 125 °C
+ 85 °C
+ 25 °C
- 40 °C
RON - On-Resistance (Ω)
VD - Analog Voltage (V)
0
500
04812 162 6 10 14 1820
100
50
200
300
400
150
250
350
450
V+ = + 20 V, V- = 0 V
IS = 1 mA
+ 125 °C
+ 85 °C
+ 25 °C
- 40 °C
- 100
- 80
- 60
- 40
- 20
0
20
40
60
80
100
- 15 - 10 - 5 0 5 10 15
VD - Analog Voltage (V)
Leakage Current (pA)
V± = ± 15 V
T = 25 °C
IS(OFF)
ID(OFF)
ID(ON)
Document Number: 65150
S10-0660-Rev. B, 22-Mar-10
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Vishay Siliconix
DG506B, DG507B
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Leakage Current vs. Temperature
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
- 60 - 40 - 20 0 20 40 60 80 100 120 140
Temperature (ºC)
Leakage Currrent (pA)
0.1
1
10
100
1000
10 000
V+ = + 15 V
V- = - 15 V
IS(OFF)
ID(OFF)
ID(ON)
- 110
- 100
- 90
- 80
- 70
- 60
- 50
- 40
- 30
- 20
- 10
0
Frequency (Hz)
100K
Loss, OIRR, X
TALK
(dB)
1M 10M 100M 1G
XTA L K
(non-adjacent)
XTA L K
(adjacent)
OIRR
DG506B
Loss
V+ = + 15 V
V- = - 15 V
RL = 50 Ω
- 110
- 100
- 90
- 80
- 70
- 60
- 50
- 40
- 30
- 20
- 10
0
Frequency (Hz)
100K
Loss, OIRR, X
TALK
(dB)
1M 10M 100M 1G
XTA L K
(non-adjacent)
XTA L K
(adjacent)
OIRR
DG506B
V+ = + 12 V
V- = 0 V
RL = 50 Ω
Loss
Switching Threshold vs. Single Supply V
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
2 6 10 14 18 22 26 30 34
0.50
0.75
1.00
1.25
1.50
1.75
2.25
2.00
2.50
V+ - Supply Voltage
Switching Threshold (V)
- 110
- 100
- 90
- 80
- 70
- 60
- 50
- 40
- 30
- 20
- 10
0
Frequency (Hz)
100K
Loss, OIRR, X
TALK
(dB)
1M 10M 100M 1G
XTA L K
(non-adjacent)
XTA L K
(adjacent)
OIRR
DG507B
V+ = + 15 V
V- = - 15 V
RL = 50 Ω
Loss
- 110
- 100
- 90
- 80
- 70
- 60
- 50
- 40
- 30
- 20
- 10
0
Frequency (Hz)
100K
Loss, OIRR, X
TALK
(dB)
1M 10M 100M 1G
XTALK
(non-adjacent)
XTA L K
(adjacent)
OIRR
DG507B
V+ = + 12 V
V- = 0 V
RL = 50 Ω
Loss
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Document Number: 65150
S10-0660-Rev. B, 22-Mar-10
Vishay Siliconix
DG506B, DG507B
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Charge Injection vs. Analog Voltage
Capacitance vs. VANALOG
Capacitance vs. VANALOG
QINJ - Charge Injection (pC)
VS - Analog Voltage (V)
- 15
- 20 - 15 - 10 - 5 0 5 10 15 20
- 10
- 5
0
5
10
15
V+ = + 15 V
V- = - 15 V
DG506B
T = 25 °C
V+ = + 12 V
V- = 0 V
Capacitance (pF)
VANALOG (V)
0
- 15 - 10 - 5 0 5 10 15
10
20
30
40
50
55
5
15
25
35
45
60
CD(off)
CS(off)
CD(on)/CS(on)
DG506B
V± = ± 15 V
T = 25 °C
Capacitance (pF)
VANALOG (V)
0
02468101113579 12
10
30
50
5
20
40
15
35
55
25
45
60
DG506B
V+ = + 12 V
T = 25 °C
CD(on)/CS(on)
CD(off)
CS(off)
Charge Injection vs. Analog Voltage
Capacitance vs. VANALOG
Capacitance vs. VANALOG
QINJ - Charge Injection (pC)
VS - Analog Voltage (V)
- 15
- 20 - 15 - 10 - 5 0 5 10 15 20
- 10
- 5
0
5
10
15
V+ = + 15 V
V- = - 15 V
DG507B
T = 25 °C
V+ = + 12 V
V- = 0 V
Capacitance (pF)
VANALOG (V)
0
- 15 - 10 - 5 0 5 10 15
10
20
30
5
15
25
35
DG507B
V± = ± 15 V
T = 25 °C
CD(on)/CS(on)
CD(off)
CS(off)
Capacitance (pF)
VANALOG (V)
0
02468101113579 12
10
30
5
20
15
25
35
DG507B
V+ = + 12 V
T = 25 °C CD(on)/CS(on)
CD(off)
CS(off)
Document Number: 65150
S10-0660-Rev. B, 22-Mar-10
www.vishay.com
11
Vishay Siliconix
DG506B, DG507B
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
TEST CIRCUITS
THD vs. Frequency
THD (%)
Frequency (Hz)
0.01
10 1000100 10 000 100 000
1
0.1
10
RL = 10 kΩ
VSignal = 5 VRMS
V = ± 15 V
V = + 12 V
Figure 2. Transition Time
A
1
A
0
A
2
A
1
A
0
+ 15
V
- 15 V
EN
V+
V- GND
D
35 pF
V
O
S1
S2 - S7
S16
1 MΩ
± 10 V
± 10 V
+ 15 V
- 15 V
EN
V+
V- GND
35 pF
V
O
S1b
S
1a
- S
4a
, D
a
S8b
1 MΩ
± 10 V
± 10 V
D
b
Logic
Input
Switch
Output
V
S16
V
O
t
TR A N S
t
r
< 20 ns
t
f
< 20 ns
S16 ONS
1
ON
t
TR A N S
0 V
V
S1
50 %
90 %
90 %
3 V
0 V
DG506B
DG507B
50 Ω
+ 3.0 V
50 Ω
+ 3.0 V
A3
A2
www.vishay.com
12
Document Number: 65150
S10-0660-Rev. B, 22-Mar-10
Vishay Siliconix
DG506B, DG507B
TEST CIRCUITS
Figure 3. Enable Switching Time
Logic
Input
Switch
Output
V
O
t
r
< 20 ns
t
f
< 20 ns
3 V
0 V
0 V
tOFF(EN)
tON(EN)
50 %
90 % 90 %
VO
EN
S1
S2 - S16
A
0
A
1
A
2
50 Ω1 kΩ
V
O
V+
GND V- D
5 V
35 pF
- 15 V
+ 15
V
S
1b
S
1a
- S
8a, D
a
S
2b
- S
8b
D
b
EN
A
0
A
1
50 Ω1 kΩ
V
O
V+
GND V-
5 V
35 pF
- 15 V
+ 15 V
DG506B
DG507B
A3
A2
Figure 4. Break-Before-Make Interval
50 %
80 %
Logic
Input
Switch
Output
V
O
V
O
tOPEN
t
r
< 20 ns
t
f
< 20 ns
0 V
3 V
0 V
EN V+
GND V-
+ 5 V
35 pF
- 15 V
+ 15
V
+ 3.0 V
A
2 D
b
, D
All S and D
a
1 kΩ
V
O
50 Ω
A
1
A
0 DG506B
DG507B
A3
Document Number: 65150
S10-0660-Rev. B, 22-Mar-10
www.vishay.com
13
Vishay Siliconix
DG506B, DG507B
TEST CIRCUITS
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65150.
Figure 5. Charge Injection
A
0
EN
A
X
V
O
V+
GND V-
D
- 15 V
+ 15 V
R
g
S
X
C
L
1 nF
Channel
Select
3 V
0 V
OFF ON
Logic
Input
Switch
Output
ΔVO
ΔVO
is the measured voltage due to charge transfer
error Q, when the channel turns of f .
QINJ = CL
x ΔVO
OFF
Figure 6. Off Isolation
Figure 8. Insertion Loss
R
L
50 Ω
V
OUT
V+
GND V-
- 15 V
+ 15 V
A
X
D A
0
S
16
S
1
V
S
EN
R
g
= 50 Ω
Of f Isolation = 20 log
V
OU T
V
IN
V
IN
3 V
R
L
50 Ω
A
X
V
O
D
R
g
= 50 Ω
Insertion Loss = 20 log
V
OU T
V
IN
A
0
V
S S
1
V+
GND V-
- 15 V
+ 15
V
EN
VIN
3 V
Figure 7. Crosstalk
Figure 9. Source Drain Capacitance
RL
50 Ω
V+
GND V-
- 15 V
+ 15 V
AX
DA0
S16
SX
VOUT
EN
Rg = 50 Ω
Crosstalk = 20 log
VOUT
VIN
VIN S1
VS
3 V
RL
50 Ω
f = 1 MHz
S
1
D
EN
+ 15
V
- 15 V
GND
V+
V-
Meter
Impedance
Analyzer
or Equivalent
S
8
A
0
A
X
Channel
Select
0 V
or
3 V
Package Information
Vishay Siliconix
Document Number: 71202
06-Jul-01 www.vishay.com
1
TSSOP: 28ĆLEAD
4.400
NOTES:
1. Package Surface: Shiny Finish (Ro 0.15 – 0.20).
2. Package Warpage: 0.012 (max).
3. Package Corner Radius: R0.1 mm (max).
4. Top to BTM Cavity Mismatch: 0.037 (max).
5. Tolerance: "0.050 unless otherwise specified.
6. End Flash Max: 0.1016 mm.
Pin 1 Indicator
O0.70x0.038"0.012 DP
Surface Polished
0.735
"0.025
6.400"0.050
1.016"0.025
0.686"0.050
0.432"0.020
0.457"0.020
0.127 T yp.
0.1 (Ref)
0.625
9.70"0.025
12_ (8X)
0.28 Typ. 0.65 Typ. Detail A
5.05"0.050
0.600"0.050
4_"2_
5_–8_ Typ.
R0.1–0.15
R0.1–0.15
1.00"0.050
Detail A
All Corner R0.1 (max)
0.050
ECN: S-03946—Rev. C, 09-Jul-01
DWG: 5851
Document Number: 71264 www.vishay.com
28-Sep-09 1
Package Information
Vishay Siliconix
PLCC: 28-LEAD
D
0.101 mm
0.004"
D-SQUARE
D1-SQUARE
B
B1
e1
A1
A
A2
D2
DIM. MILLIMETERS INCHES
MIN. MAX. MIN. MAX.
A 4.20 4.57 0.165 0.180
A12.29 3.04 0.090 0.120
A20.51 - 0.020 -
B 0.331 0.553 0.013 0.021
B10.661 0.812 0.026 0.032
D 12.32 12.57 0.485 0.495
D111.430 11.582 0.450 0.456
D29.91 10.92 0.390 0.430
e11.27 BSC 0.050 BSC
ECN: T09-0766-Rev. D, 28-Sep-09
DWG: 5491
Package Information
www.vishay.com Vishay Siliconix
Revision: 01-Aug-11 1Document Number: 71268
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOIC (WIDE-BODY): 28-LEADS
ECN: E11-2209-Rev. D, 01-Aug-11
DWG: 5850
0.3525 0.001 0.06 0.002D
CAVITY NO.
0.295 0.001
0.070 0.005
0.1475 0.001
0.055 0.005
PIN 1 INDICATOR
0.047 0.007 0.001 dp
SURFACE POLISHED
0.010
0.334 0.005
R0.004
R0.008
R0.009
R0.004
0.032 0.005
4°2°
0.041 0.001
0.705 0.001
0.091 0.001
0.017 0.00030.050 TYP. 0.00825 ± 0.00325
0.098 0.002
0.334 0.005
0.291 0.001
0.295 0.001
0.406 0.004
R0.004
7°(4 )
0.020 45°
DETAIL A
DETAIL A
1 2345678
28 27 26 25 24 23 22 21
910
20 19
11
18
12
17
13
16
14
15
All Dimensions In Inches
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
